Variable Range Hopping Conduction in p-Type CuInTe2

Iqbal, Mazhar; Galibert, J.; Wasim, S. M.; Hernández, E.; Bocaranda, P.; Leotin, J.

doi:10.1002/1521-3951(200006)219:2<351::aid-pssb351>3.0.co;2-z

Cited by 11 publications

(3 citation statements)

References 20 publications

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“…This suggests that the conduction in the impurity band is due to a variable-range-hopping mechanism of Efros-Shklovskii type [20] with ρ = ρ 0ES exp(T 0ES /T ) 1/2 . The parameters obtained from the fit are ρ 0ES ≈ 1.4 × 10 3 , and T 0ES ≈ 2.2 × 10 3 K. This value of T 0ES is of the same order as that reported for CuInTe 2 , which is 3.4 × 10 3 K [21].…”

Section: Electrical Propertiessupporting

confidence: 77%

Untitled

Rincón

Wasim

Marín

2002

J. Phys.: Condens. Matter

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The electrical and optical properties of the ordered defect compound CuIn3Te5 have been studied. Above around 125 K, the electrical conduction is due to the activation of a shallow acceptor level of about 30 meV. The temperature dependence of the mobility in the high-temperature regime is explained by considering an additional scattering mechanism of the free holes with donor-acceptor defect pairs. At lower temperatures the mobility can be explained by using an expression for a variable-range-hopping conduction mechanism. The analysis of the temperature dependence of the optical data shows that the band-gap energy varies from 1.08 to 1.00 eV between 10 and 300 K. As in other copper ternaries, the phonon energy, much higher than the highest optical phonon mode, associated with the Urbach tail and the temperature dependence of the Urbach energy, is explained on the basis of the contribution of localized modes produced by structural disorders of low formation energy.

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Section: Electrical Propertiessupporting

confidence: 77%

Untitled

Rincón

Wasim

Marín

2002

J. Phys.: Condens. Matter

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“…By Wahab et al [32] [43] were fabricates CuInS 2 thin films material by thermal evaporation method and studied their electrical dc conductivity and activation energy in the temperature range between 150-300 0 C. The conductivity values were between 76. [35,46]. A crossover conduction from Mott to ES VRH behavior, by lowering temperature, was reported in CuInTe 2 [35,52] down to 0.4 K. In Cu-ternaries VRH conduction occurs at relatively high temperatures of up to.…”

Section: Mobility and Carrier Concentration Of Cuins 2 Thin Filmsmentioning

confidence: 86%

“…[35,46]. A crossover conduction from Mott to ES VRH behavior, by lowering temperature, was reported in CuInTe 2 [35,52] down to 0.4 K. In Cu-ternaries VRH conduction occurs at relatively high temperatures of up to.…”

Section: Mobility and Carrier Concentration Of Cuins 2 Thin Filmsmentioning

confidence: 86%

Variation of some physical properties of CuInS2 films by substrate temperature

Meshram¹,

Tembhurkar²,

Chimankar³

2019

IJSRPAS

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Spray pyrolysis is one of the most convenient, economical, inexpensive and simple methods for depositing large area semiconducting thin films. Semiconducting ternary CuInS 2 thin films have been deposited onto the glass substrate by varying substrate temperature from 275 0 C, at the interval of 25 to 350 0 C by using aqueous solution of Cupric chloride, Indium trichloride and thiourea of 0.02 M and Seems to be one of the more important parameters affecting the physical properties of the semiconductor. The lattice parameter a and c at room temperature of the tetragonal unit cell were calculated for all these samples by Bruker AXS D8 Advance X-ray diffraction (XRD) techniques with Cu K α (wavelength = 1.5418 Å) radiation.Conductivity of thin films determined by Four Probe method and hot probe technique wasdetermined to exhibit ptype conductivity. Due to temperature effect, shows the atoms are arrange regular in compound of these samples prepared at various temperatures 250, 300 and 350 0 C. As the films are not doped intentionally defect observed in intrinsic nature operative to be produced by Sulphur interstitials. Grain sizes were studied by Scanning Electron Microscope.

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