Low Field Time Dependent Dielectric Integrity

Anolick, Eugene S.; Nelson, Glenn R.

doi:10.1109/irps.1979.362864

Cited by 54 publications

(18 citation statements)

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“…First, an empirical model for breakdown was developed by observing the electric field dependence of TDDB data [8]- [10]. When the logarithm of the time-to-failure was plotted against applied electric field a straight line was observed, i.e., , where is the electric field and is the electric field acceleration factor.…”

Section: A Early Models and Breakdown In Thin Oxidesmentioning

confidence: 99%

Ultrathin gate oxide reliability: physical models, statistics, and characterization

Suehle

2002

IEEE Trans. Electron Devices

145

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Abstract-The present understanding of wear-out and breakdown in ultrathin ( 5 0 nm) SiO 2 gate dielectric films and issues relating to reliability projection are reviewed in this article. Recent evidence supporting a voltage-driven model for defect generation and breakdown, where energetic tunneling electrons induce defect generation and breakdown will be discussed. The concept of a critical number of defects required to cause breakdown and percolation theory will be used to describe the observed statistical failure distributions for ultrathin gate dielectric breakdown. Recent observations of a voltage dependent voltage acceleration parameter and non-Arrhenius temperature dependence will be presented. The current understanding of soft breakdown will be discussed and proposed techniques for detecting breakdown presented. Finally, the implications of soft breakdown on circuit functionality and the applicability of applying current reliability characterization and analysis techniques to project the reliability of future alternative gate dielectrics will be discussed.

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Section: A Early Models and Breakdown In Thin Oxidesmentioning

confidence: 99%

Ultrathin gate oxide reliability: physical models, statistics, and characterization

Suehle

2002

IEEE Trans. Electron Devices

145

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“…2.14, serves as further motivation that defect migration and long term material rearrangement plays a significant role in breakdown. In this example, Anolick and Nelson show that breakdown threshold decreases substantially after long term, sub-breakdown operation [211]. While many different mechanisms are likely at play in this result, the drift of point defects and resulting changes in material properties are expected to play a large role in this change.…”

Section: Dielectric Breakdownmentioning

confidence: 88%

“…These concepts were revisited with respect specifically to electronic materials in the 1970's and 80's as the microelectronics boom was beginning to take off [43,[210][211][212][213]. During this time, advances in characterization technology had allowed for studies that identified the various regimes of dielectric breakdown.…”

Section: Dielectric Breakdownmentioning

confidence: 99%

“…In the work shown in this dissertation, we will address the change in material properties during the formation stages of dielectric breakdown; the stages that are the precursors to the onset of the catastrophic failure process. The issue of dielectric breakdown in manufacturing applications brought about empirical studies that utilize relatively large amounts of data to identify root causes and understand physical mechanisms of breakdown [43,211]. These experiments yielded a number of interesting results showing the dependence of time, thickness, device area, device structure, and operation history on breakdown characteristics.…”

Section: Dielectric Breakdownmentioning

confidence: 99%

“…O'Dwyer highlighted the thermal aspects of dielectric breakdown [210,213]. His findings show that high temperatures may not directly 14: Probability of failure and breakdown voltage for samples before operation (blue, square) and after a significant time of operation at below-breakdown conditions (red, circle) [211]. Curves included to guide the eye.…”

Section: Dielectric Breakdownmentioning

confidence: 99%

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Understanding Phonon Interactions with Defects in Functional Oxide Materials

Donovan¹

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Understanding of nano-scale thermal transport has enabled significant advances in a wide variety of fields including microelectronics, alternative energy, optics, and many more [1][2][3][4]. Utilized in many of these applications are a class of materials known as functional oxides. These materials are oxygen compounds with specific functional properties of interest (e.g., dielectrics [5][6][7][8], piezoelectrics [9][10][11], photovoltaics [12][13][14], thermoelectrics [15][16][17][18][19]). Often it is the defects in these materials that enable functionality and, depending on the processing and operating conditions, the concentration and types of defects that are present in these materials can vary widely [20]. In this dissertation, I aim to identify the role that defects play in functional oxide materials with respect to thermal transport.The major thermal carriers in most functional oxide crystals are collective lattice vibrations, or phonons [21]. Phonon-dominated thermal conductivity is dictated by the scattering of these thermal carriers with a variety of other components or the material system, including defects in the crystal [22,23]. I concentrate on three types of defects that are common in functional oxides: boundaries, extrinsic point defects, and intrinsic point defects.Boundaries such as film boundaries and grain boundaries with nano-scale dimensions can be detrimental to the thermal conductivity of a material. As the length of the uninterrupted crystal reduces to the phonon mean free paths in the crystal, phonons will scatter readily off of nano-scale boundaries and will not be able to propagate as they would in a bulk environment. This becomes particularly relevant in technologies such as the microelectronics industry, where device size scales are well below common phonon mean free paths in the constituent materials. To study this, I turn to one of the more common functional oxides used in the microelectronics industry, BaTiO 3 .I study the effects of nano-scale grains on thin films of BaTiO 3 grown via chemical solution deposition. The films studied are 150 nm and range in grain size from 36 nm -63 nm. I show that the thermal conductivity of these nano-grained films scales with the grain size and film thickness and demonstrate agreement of this trend with analytical models. This result demonstrates that despite a complex crystal structure, there is a mean free path spectrum of phonons in BaTiO 3 that significantly exceeds the dimensions of the grains and film (contrary to the common "gray" mean 2 free path assumption seen in literature).To address the role of extrinsic point defects, or dopants, on the thermal conductivity of functional oxides, I study the effects of dysprosium doping in thin films of cadmium oxide deposited by molecular beam epitaxy. In this experiment, the addition of Dy dopants in CdO actually increases the thermal conductivity initially, owing to a reduction in the equilibrium concentration of oxygen vacancies (a type of defect that is intrinsic to all oxides). The de...

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