2014
DOI: 10.1016/j.apsusc.2014.08.186
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Low fraction of hexagonal inclusions in thick and bulk cubic GaN layers

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Cited by 14 publications
(6 citation statements)
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“…It is of note that the peak energy of the D 0 X features are lower than reported in the literature by between 0.03 and 0.04 eV [7,9,11,12,[21][22][23][24][25][26]. This may be a result of a reduced bandgap due to tensile strain in the GaN [21], which lies between 0.5 × 10 −3 and 3 × 10 −3 for sample A at room temperature, as revealed by high resolution XRDω − 2θ measurements of multiple on-and off-axis reflections.…”
Section: Resultsmentioning
confidence: 99%
“…It is of note that the peak energy of the D 0 X features are lower than reported in the literature by between 0.03 and 0.04 eV [7,9,11,12,[21][22][23][24][25][26]. This may be a result of a reduced bandgap due to tensile strain in the GaN [21], which lies between 0.5 × 10 −3 and 3 × 10 −3 for sample A at room temperature, as revealed by high resolution XRDω − 2θ measurements of multiple on-and off-axis reflections.…”
Section: Resultsmentioning
confidence: 99%
“…The high fraction of h-GaN inclusions can be associated with the surface structure of ( 112) and (111) GaAs substrates exhibiting a large (111) facets which favor the presence of the stacking faults (SFs). When the SFs have been generated at high density in some localized areas, a cubic-to-hexagonal phase transformation domains in GaN layers was observed [43].…”
Section: Overgrowth Of Ht-gan Layers On the Gan Nucleation Layersmentioning
confidence: 99%
“…Emission in this region of the spectrum has been attributed to inclusions of wz-GaN in the epilayer [12][13][14]18,24,29 .…”
Section: A Experimental Resultsmentioning
confidence: 99%
“…However, growing phase-pure zb-GaN is challenging with epilayers often containing wz-GaN, as either stacking faults (SFs) or crystal inclusions, which has been reported to reduce the radiative efficiency of zb-GaN based QW structures 22 . The phase purity and structural quality of the zb-GaN can be assessed via Xray diffraction (XRD) [23][24][25][26] , Raman spectroscopy 23,24 and high-resolution transmission electron microscopy (HR-TEM) 16,27,28 . The presence of wz-GaN in zb-GaN epilayers has been seen to result in narrow peaks or a broad emission band in the low temperature photoluminescence (PL) spectrum at energies between the bandgaps of zb and wz-GaN [12][13][14]18,24,29 .…”
Section: Introductionmentioning
confidence: 99%