Low-frequency electronic noise in superlattice and random-packed thin films of colloidal quantum dots

Geremew, Adane K.; Qian, Caroline; Abelson, Alex; Rumyantsev, Sergey; Kargar, Fariborz; Law, Matt; Balandin, Alexander A.

doi:10.1039/c9nr06899f

Cited by 17 publications

(18 citation statements)

References 56 publications

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“…It is observed in various materials where the noise is 1/f type, without the superimposed G-R bulges. [49,52,63] In our measurements the S I (I D ) dependence at different temperatures does not show a perfect quadratic scaling, Instead, we obtained S I (I D ) ~ I D ζ where parameter ζ is in the range between from 1.49 to 2.15. We attribute this deviation to the non-linearity of I-V characteristics in the tested devices.…”

Section: Resultsmentioning

confidence: 53%

“…Details of our measurement protocol are described in the Methods section and in prior reports in the context of other materials systems. [47][48][49]51,52,[63][64][65][66][67][68][69] Measuring low-frequency noise in conductors with high electrical resistivity is challenging-one needs to have a sufficient current level to obtain reliable data. From the other side, one typically prefers to use the linear region of the I-V characteristics for biasing the device during the noise measurements.…”

Section: Resultsmentioning

confidence: 99%

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Low‐Frequency Electronic Noise in Quasi‐2D van der Waals Antiferromagnetic Semiconductor FePS₃—Signatures of Phase Transitions

Ghosh

Kargar

Mohammadzadeh

et al. 2021

Adv Elect Materials

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These layered quasi-2D van der Waals (vdW) compounds have interesting electronic, optical, and magnetic properties that can offer new device functionalities. [7][8][9][10][11][12][13][14][15][16][17][18][19] It has been demonstrated that some MPX 3 thin films are one of the rare few-layer vdW materials, which can have stable intrinsic antiferomagnetism (AF) even at mono-and few layer thicknesses. [20][21][22] The existence of weak vdW bonds between the MPX 3 layers makes them potential candidates for the 2D spintronic devices. The metal element of the MPX 3 materials modifies the bandgap from a medium bandgap of ≈1.3 eV to a wide bandgap of ≈3.5 eV. [1][2][3] The diverse properties of these materials tunable by proper selection and combination of the M and X elements make the MPX 3 materials an interesting platform for fundamental science and practical applications. [1][2][3][4][23][24][25][26][27][28][29][30] Among MPX 3 materials, FePS 3 is particularly promising. Its Ising-type ordering allows it to maintain the bulk-like magnetic behavior down to a single monolayer, which explains its moniker -"magnetic graphene." [31] The cleavage energy of FePSe 3 is slightly higher than that of graphite, while that for all other combinations of the M and X elements is lower than that of graphite. [32] The Néel temperature, T N , for FePS 3 is reported to be around 118 K. [1,2,20] It shows strong magnetic anisotropy. [15,33,34] In the crystal, each Fe atom is ferromagnetically coupled with two of its neighbors but the layer is antiferromagnetically coupled with nearest layers making it a zigzag-AF (z-AF) material. [1] The semiconducting nature of FePS 3 , with the energy bandgap of 1.5 eV, and a possibility of the strain engineering of electron and phonon band-structure create additional means for the control of both electron and spin transport. [9,17,35] The quantized spin waves, i.e., magnons in FePS 3 , have frequencies in the terahertz (THz) frequency range, [36,37] which makes this material interesting for THz magnonic devices. However, the electron and spin transport properties of FePS 3 have not been studied in sufficient details yet to assess the potential of such materials for THz applications.Here, we report the results of investigation of low-frequency current fluctuations, i.e., electronic noise, in thin films of FePS 3. The current-voltage (I-V) and noise characteristics

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Section: Resultsmentioning

confidence: 53%

Section: Resultsmentioning

confidence: 99%

Low‐Frequency Electronic Noise in Quasi‐2D van der Waals Antiferromagnetic Semiconductor FePS₃—Signatures of Phase Transitions

Ghosh

Kargar

Mohammadzadeh

et al. 2021

Adv Elect Materials

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“…It is also worth to know that as the temperature elevates, the value of the turning frequency is also rising due to the 1/f noise covers the effects of white noise. There was no G-R noise was depicted in the spectral of noise power density curve which indicated the good quality of our material growth [17]. On the other hand, at 200 K temperature, the noise value at 1Hz is about 1×10 17 A 2 /Hz, which is relatively lower at high temperature.…”

Section: The Simulation Of Dark Currentmentioning

confidence: 75%

Investigation of Low Frequency Noise-current Correlation for the InAs/GaSb T2SL Long-wavelength Infrared Detector

Wang¹,

Zhu²,

Xu³

et al. 2021

Preprint

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In this paper, a mesa-type 256×8 long-wavelength infrared detector is prepared by using InAs/GaSb type-II superlattice material with double barrieres structure. the area of each pixel is 25×25 μm2. The cut-off wavelength and dark current density of the detector at -0.05 V bias with liquid nitrogen temperature is 11.5 μm and 4.1×10-4 A/cm2, respectively. The power spectrum of low-frequency noise (1/f noise) at different temperatures have also been fitted by the Hooge model, and the correlations with dark current are extracted subsequently. The results shown that the 1/f noise of the detector is mainly caused by the generation-recombination current at a low reverse bias, however, when the reverse bias is high, the 1/f noise should be expressed by the sum of Igr noise and Ibtb noise which is ignored in the previous research. The 1/f noise-current correlation assessed in this work can provide insights into the low frequency noise characteristics of long-wavelength T2SL InAs/GaSb detectors, and allow for a better understanding of the main source of low-frequency noise.

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“…2f, ideally tting with the measured noise spectrum. At frequency < 1 kHz, the noise is mainly originated from the 1/f noise due to the scattering between CQDs and at the interface between different functional layers 27,28 . At frequency > 1 kHz, the shot noise and G-R noise primarily determine the noise of our photodiode.…”

Section: Figure Of Merits Of Cmos-compatible Pbs Cqd Photodiodesmentioning

confidence: 99%

A High-resolution Colloidal Quantum Dot Imager by Monolithic Integration

Liu

Chen

et al. 2021

Preprint

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Near-infrared (NIR, 0.7–1.4 µm) imagers have wide applications in night surveillance, material sorting, machine vision and potentially automatic driving. However, limited by the high-temperature processing and requirement of single-crystalline substrate, so far flip-chip is the dominant way to connect infrared photodiodes and silicon-based readout integrated circuit (ROIC) to produce infrared imagers, suffering from complicated process and ultra-high cost and hence limiting their widespread applications in the market. Here we report the monolithic integration of colloidal quantum dots (CQD) photodiodes with complementary metal-oxide-semiconductor (CMOS) ROIC, operating as a low-cost and high-performance imager. The CQD photodetector is well designed with a CMOS-compatible structure, demonstrating a response spectral range of 400–1300 nm, a detectivity of 2.1×1012 Jones at room temperature, a -3dB bandwidth of 140 kHz and a linear dynamic range over 100 dB. The CQD imager can identify materials, inspect apple scar and veins with a large size of 640×512 pixels and a spatial resolution of 40 lp/mm at a modulation transfer function of 50%. Monolithic integration significantly reduces the cost without sacrificing performance, thus providing huge potential for the ubiquitous deployment of infrared imagers.

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Low-frequency electronic noise in superlattice and random-packed thin films of colloidal quantum dots

Cited by 17 publications

References 56 publications

Low‐Frequency Electronic Noise in Quasi‐2D van der Waals Antiferromagnetic Semiconductor FePS₃—Signatures of Phase Transitions

Low‐Frequency Electronic Noise in Quasi‐2D van der Waals Antiferromagnetic Semiconductor FePS₃—Signatures of Phase Transitions

Investigation of Low Frequency Noise-current Correlation for the InAs/GaSb T2SL Long-wavelength Infrared Detector

A High-resolution Colloidal Quantum Dot Imager by Monolithic Integration

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Low-frequency electronic noise in superlattice and random-packed thin films of colloidal quantum dots

Cited by 17 publications

References 56 publications

Low‐Frequency Electronic Noise in Quasi‐2D van der Waals Antiferromagnetic Semiconductor FePS3—Signatures of Phase Transitions

Low‐Frequency Electronic Noise in Quasi‐2D van der Waals Antiferromagnetic Semiconductor FePS3—Signatures of Phase Transitions

Investigation of Low Frequency Noise-current Correlation for the InAs/GaSb T2SL Long-wavelength Infrared Detector

A High-resolution Colloidal Quantum Dot Imager by Monolithic Integration

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Product

Resources

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Low‐Frequency Electronic Noise in Quasi‐2D van der Waals Antiferromagnetic Semiconductor FePS₃—Signatures of Phase Transitions

Low‐Frequency Electronic Noise in Quasi‐2D van der Waals Antiferromagnetic Semiconductor FePS₃—Signatures of Phase Transitions