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The sections in this article are Shot Noise Generation–Recombination Noise Thermal Noise General Introduction to 1/ f Noise Calculation of the Conventional Quantum 1/ f Effect in Homogeneous Semiconductor Materials Derivation of Mobility Quantum 1/ f Noise in n + p Diodes and Metal–Insulator–Semiconductor Devices Derivation of the Conventional Quantum 1/ f Effect Physical Derivation of the Coherent Quantum 1/ f Effect Rigorous Derivation of the Coherent Quantum 1/ f Effect Recent Results Development of Special Materials for Ultralow‐Noise FET and Junction Devices Device Optimization for Ultralow 1/ f Noise Discussion
The sections in this article are Shot Noise Generation–Recombination Noise Thermal Noise General Introduction to 1/ f Noise Calculation of the Conventional Quantum 1/ f Effect in Homogeneous Semiconductor Materials Derivation of Mobility Quantum 1/ f Noise in n + p Diodes and Metal–Insulator–Semiconductor Devices Derivation of the Conventional Quantum 1/ f Effect Physical Derivation of the Coherent Quantum 1/ f Effect Rigorous Derivation of the Coherent Quantum 1/ f Effect Recent Results Development of Special Materials for Ultralow‐Noise FET and Junction Devices Device Optimization for Ultralow 1/ f Noise Discussion
Low‐frequency noise, containing fluctuations of current or voltage with frequency components below 10 kHz, is mainly fundamental 1/ f noise and sometimes nonfundamental 1/ f noise. In addition, shot noise, generation–recombination (GR) noise, and thermal noise, which are important at higher frequencies, also extend to the low‐frequency domain. All theses forms of electronic noise, are characterized by the mean squared current fluctuation (( δI ) 2 ) [or (( δV ) 2 ≡RMS δV ) 2 for voltage], measured in series with (or across) the device or sample under test, when a constant voltage (current) is applied, except for thermal noise, which is present even in thermal equilibrium, with no bias applied.
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