Noise, Low‐Frequency

Abstract

The sections in this article are Shot Noise Generation–Recombination Noise Thermal Noise General Introduction to 1/ f Noise Calculation of the Conventional Quantum 1/ f Effect in Homogeneous Semiconductor Materials Derivation of Mobility Quantum 1/ f Noise in n + p Diodes and Metal–Insulator–Semiconductor Devices Derivation of the Conventional Quantum 1/ f Effect Physical Derivation of the Coherent Quantum 1/ f Effect Rigorous Derivation of the Coherent Quantum 1/ f Effect Recent Results Development of Special Materials for Ultralow‐Noise FET and Junction Devices Device Optimization for Ultralow 1/ f Noise Discussion

Quantum 1/fnoise in epitaxial lateral overgrown GaN: piezoelectric effect

“…The coherent piezoelectric quantum 1/f noise theory [24] is given as S j (f )/j 2 = 4g λ /πf 1− ( v /v s ) 2 , where | v | = u is the drift velocity of the carriers, v s the transversal acoustic sound velocity and m * is the electron effective mass. The parameter g λ is the electron-phonon coupling constant to the phonon mode λ and is defined as g λ = e 2 f TA /hε 0 v s [25].…”

“…Studying noise in semiconductors is important for understanding the physical processes that govern the transport of carriers [1]. The most common type of noise encountered in semiconductors is flicker or 1/f noise [2]. Flicker noise always manifests itself as fluctuations in sample resistance and hence it is commonly known as resistance fluctuations [3].…”

“…The universality of the theory lies in the fact that any infraquanta with infrared divergent coupling to the current carriers will contribute 1/f noise proportional to the coupling constant. Therefore, it is now well accepted that resistance fluctuations are very much dependent on the particular system under investigation, although they are universal [2,6].…”