Quantum 1/<i>f</i>noise in epitaxial lateral overgrown GaN: piezoelectric effect

Sia, E. K.; Chua, Soo-Jin; Hartnagel, H.L.; Händel, Peter

doi:10.1088/0268-1242/17/6/320

Cited by 6 publications

(9 citation statements)

References 24 publications

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“…With a measured voltage of 0.01V, 0.66 was obtained. The measurement errors of S V at 550K for selected 20 frequency points within the range of 0.1-50Hz are estimated to be about 10% [5]. Fig.…”

Section: Low Frequency Noise Characteristicsmentioning

confidence: 93%

“…The resistivity of both ELO-GaN (epitaxial lateral overgrowth generated) and n + -GaN:Si (doped) samples was measured [5] for temperature varying from 100-550K. As illustrated in Fig.…”

Section: Experimental Temperature-dependent Resistivitymentioning

confidence: 99%

“…The voltage power spectral density S V with error bars is shown [5] in Fig. 8.1, for ELO-GaN measured at 130K and 550K at a constant biasing current of 0.2mA.…”

Section: Low Frequency Noise Characteristicsmentioning

confidence: 99%

“…Note that the intercept points were taken with the gradient fixed at -1. These experimentally determined noise parameters were also plotted [5] against temperature variation as shown in Fig. 8 be due to the possible increase of the piezopolaron coupling coefficient g. An investigation into this strain-dependent g will be carried out in the subsequent section [5].…”

Section: Low Frequency Noise Characteristicsmentioning

confidence: 99%

“…There are as many types of quantum 1/f noise [1]- [5], as there are systems of massless infraquanta with infrareddivergent coupling to the current carriers. Each of these types has a conventional and coherent part, corresponding to terms in the hamiltonian that are proportional with the first and second power of the number of carriers defining the current, respectively.…”

Section: Introductionmentioning

confidence: 99%

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Piezoelectric quantum 1/f noise in AlGaN HFETs and reliability

Händel

Morkoç̌

2009

SPIE Proceedings

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The QED quantum 1/f noise formulas have been recently refined for the case of AlGaN/GaN HFETs and FETs through a better definition of the coherence parameter s, with much better agreement with the experiment. Indeed, for a FET/HFET width w>>L>t, this yielded s nrtLlog(w/2L) instead of the old s=2nrtw formula. Here we generalize this basic result for the first time to a finite piezoelectric case. Here L= source to drain length, t is the thickness (depth) of the channel, n is the concentration of carriers, =3.1416, and r=2.8 . 10-13 cm is the classical radius of the electron. In piezoelectric materials, particularly those also showing ferroelectric spontaneous polarization, transversal phonons are the massless quanta leading to large piezoelectric, or lattice-dynamic, quantum 1/f effects, conventional and coherent. As in the usual QED case, the parameter s' yields the observed 1/f noise as a weighted sum of conventional and coherent quantum 1/f effects. The HFET piezocoherence weighting parameter s', derived here is (gN'h/m*v s )(v s /u) 3 F(u/v s )t/12w, with N'=nLt, v s the piezophonon speed, u the drift velocity, and F(x) is a function defined earlier, equal to (2/3)x 3 for x<<1. This s' is increasing, ~t 2 , important for reliability and device optimization. For HFET stability, a slower decrease of conductivity than of polarization is found to be needed for stability along the large device width, when the temperature increases.

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Section: Low Frequency Noise Characteristicsmentioning

confidence: 93%

“…The resistivity of both ELO-GaN (epitaxial lateral overgrowth generated) and n + -GaN:Si (doped) samples was measured [5] for temperature varying from 100-550K. As illustrated in Fig.…”

Section: Experimental Temperature-dependent Resistivitymentioning

confidence: 99%

“…The voltage power spectral density S V with error bars is shown [5] in Fig. 8.1, for ELO-GaN measured at 130K and 550K at a constant biasing current of 0.2mA.…”

Section: Low Frequency Noise Characteristicsmentioning

confidence: 99%

Section: Low Frequency Noise Characteristicsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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