Field Effect Transistors and Heterojunction Bipolar Transistors

Morkoç̌, H.

doi:10.1002/9783527628445.ch3

Handbook of Nitride Semiconductors and Devices 2008

DOI: 10.1002/9783527628445.ch3

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Field Effect Transistors and Heterojunction Bipolar Transistors

H. Morkoç̌

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Cited by 3 publications

References 525 publications

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The effect of N-polar GaN domains as Ohmic contacts

Xie

Mita

Collazo

et al. 2010

Applied Physics Letters

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Transfer line method measurements revealed that if the Ohmic contact regions were replaced by N-polar GaN, the contact resistance could be reduced from 0.71 Ω mm (or ρc=4×10−6 Ω cm2) to 0.24 Ω mm for a ∼200 nm thick Si-doped GaN layer. The reduction in contact resistance was largely due to the ∼1019 cm−3 free carriers in N-polar source/drain regions as measured by Hall effect. Secondary ion mass spectroscopy confirmed that oxygen doping in the N-polar region was more than three orders of magnitude greater than that in the Ga-polar region that was explained by the large difference in the adsorption energy for oxygen (∼1.3 eV/atom) between the N- and Ga-polar surfaces during the metalorganic chemical vapor deposition.

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The effect of N-polar GaN domains as Ohmic contacts

Xie

Mita

Collazo

et al. 2010

Applied Physics Letters

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Reduction of Flicker Noise in AlGaN/GaN-Based HFETs After High Electric-Field Stress

Zhu

Kayis

et al. 2011

IEEE Electron Device Lett.

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We report on the evolution of AlGaN/GaN-based heterojunction field-effect transistor (HFET) operation under highelectric-field stress. Specifically, a 10 ∼ 15 dB decrease in the flicker noise is observed after stress in contrast with what has been nominally observed and reported in the literature in the realm of direct-current characteristics. Gate lag measurements revealed a trap state with an activation energy of 0.20 eV in the pristine devices, which manifests itself as a generation-recombination peak in the flicker noise spectrum. This trap state becomes undetectable in gate lag and noise measurements after high-field stress. Analysis shows that the phenomena observed are consistent with the change of surface charge profile during high-electric-field stress.

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Estimation of Trapping Induced Dynamic Reduction in 2DEG Density of GaN-Based HEMTs by Gate-Lag DCT Technique

Raja

Dupouy

Bouslama

et al. 2022

IEEE Trans. Electron Devices

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Field Effect Transistors and Heterojunction Bipolar Transistors

Cited by 3 publications

References 525 publications

The effect of N-polar GaN domains as Ohmic contacts

The effect of N-polar GaN domains as Ohmic contacts

Reduction of Flicker Noise in AlGaN/GaN-Based HFETs After High Electric-Field Stress

Estimation of Trapping Induced Dynamic Reduction in 2DEG Density of GaN-Based HEMTs by Gate-Lag DCT Technique

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