Low-frequency fluctuations in solids:<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mfrac><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mi>f</mml:mi></mml:mrow></mml:mfrac></mml:math>noise

Dutta, Prashanta; Horn, Paul

doi:10.1103/revmodphys.53.497

Cited by 1,695 publications

(1,133 citation statements)

References 38 publications

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“…In Figure 5 (b), one can see that the noise level increases by two orders of magnitude as temperature changes from 298 K to 400 K. The data in Figure 5 (b) suggest that the noise spectral density attains its maximum value at T=400 K and then reveal a saturation and a slowly decreasing trend. This behavior is analogous to that in thin films of Ag and Cu [35,36]. In the region of the fast growth, SI/I 2 ~T s with s=21 for the shown data set for two representative devices (see Figure 5 (b)).…”

Section: Introductionsupporting

confidence: 62%

“…For this reason, applying of the Dutta-Horn model for temperatures above ~400 K has to be done with caution. The activation energy EP, at which the distribution function D(E) attains its peak is related to temperature as 7 | P a g e = − (2 0 ).The activation energy distribution calculated from the noise data in metals usually has a peak at EP≈1 eV [35]. Using the data for a representative device heated all the way to 430 K we determined that the energy distribution reaches its maximum at EP≈1.0 eV for TaSe3 nanowires as well (data set for "Device 1" in Figure 5 (b)).…”

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confidence: 99%

“…The Dutta-Horn model describes the temperature dependent low-frequency noise by the thermally activated random fluctuations [35]. Within this model, the noise spectral density, S(f,T), can be approximated as…”

mentioning

confidence: 99%

“…The activation energy distribution calculated from the noise data in metals usually has a peak at EP≈1 eV [35]. Using the data for a representative device heated all the way to 430 K we determined that the energy distribution reaches its maximum at EP≈1.0 eV for TaSe3 nanowires as well (data set for "Device 1" in Figure 5 (b)).…”

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confidence: 99%

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Low-Frequency Electronic Noise in Quasi-1D TaSe₃ van der Waals Nanowires

et al. 2016

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We report results of investigation of the low-frequency electronic excess noise in quasi-1D nanowires of TaSe3 capped with quasi-2D h-BN layers. Semi-metallic TaSe3 is a quasi-1D van der Waals material with exceptionally high breakdown current density. It was found that TaSe3 nanowires have lower levels of the normalized noise spectral density, SI/I 2 , compared to carbon nanotubes and graphene (I is the current). The temperature-dependent measurements revealed that the low-frequency electronic 1/f noise becomes the 1/f 2 -type as temperature increases to ~400 K, suggesting the onset of electromigration (f is the frequency). Using the Dutta-Horn random fluctuation model of the electronic noise in metals we determined that the noise activation energy for quasi-1D TaSe3 nanowires is approximately EP≈1.0 eV. In the framework of the empirical noise model for metallic interconnects, the extracted activation energy, related to electromigration, is EA=0.88 eV, consistent with that for Cu and Al interconnects. Our results shed light on the physical mechanism of low-frequency 1/f noise in quasi-1D van der Waals semi-metals and suggest that such material systems have potential for ultimately downscaled local interconnect applications.Keywords: quasi-1D materials; van der Waals materials; low-frequency noise; interconnects 2 | P a g e The investigations of the two-dimensional layers and heterostructures revealed new physics and demonstrated promising applications [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. Starting with graphene [3][4][5], and spreading to a wide range of layered van der Waals materials [6][7][8][9][10], successful isolation of individual atomic layers from their respective bulk crystals by mechanical exfoliation led to the fast growing research activities in the 2D materials. In contrast to the layered van der Waals materials that yield 2D crystals, materials, such as TaSe3 and TiS3 [15][16][17] yield the quasi-onedimensional (1D) van der Waals crystal structures. These materials belong to the group of the transition metal trichalcogenides MX3 (where M = Mo, W, and other transition metals; X = S, Se, Te). In the monoclinic crystal structure of TaSe3, the trigonal prismatic TaSe3 units form continuous chains extending along the b axis and leading to fiber-and needle-like crystals with anisotropic semi-metallic or metallic properties. The quasi-1D atomic threads are weakly bound in bundles by the van der Waals forces. As a consequence, the mechanical exfoliation of the MX3 crystals results not in the 2D layers but rather in the quasi-1D van der Waals nanowires. We have recently demonstrated quasi-1D TaSe3 nanowires with the record high current density exceeding JB~10 MA/cm 2 , which is an order of magnitude larger than that for the Cu interconnects [18].In this Letter, we report on the excess low-frequency electronic noise in quasi-1D nanowires of TaSe3 capped with the quasi-2D h-BN layers. The h-BN capping was used as a surface passivation protecting from environmental exposure. The measuremen...

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Section: Introductionsupporting

confidence: 62%

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confidence: 99%

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confidence: 99%

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confidence: 99%

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Low-Frequency Electronic Noise in Quasi-1D TaSe₃ van der Waals Nanowires

et al. 2016

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“…The spectral density of the 1/f noise was proportional to the square of the applied voltage bias across the nanopore ( Figure 2b), as expected from Hooge's model. 16 Although there was no apparent correlation between the 1/f noise level and the cation selectivity of the nanopore, the fact that 1/f noise has been attributed to charge fluctuations in other systems [17][18][19] reinforced our misgivings about the unknown and possibly variable state of our nanopore surface. Our nanopores had been fabricated by the interactions of a Si 3 N 4 membrane with an unknown number of Ga + ions during FIB drilling, an unknown number of Ar + ions during ion beam sculpting, and, for pores verified by TEM imaging, an uncertain exposure to an electron beam.…”

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confidence: 88%

Atomic Layer Deposition to Fine-Tune the Surface Properties and Diameters of Fabricated Nanopores

et al. 2004

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Atomic layer deposition of alumina enhanced the molecule sensing characteristics of fabricated nanopores by fine-tuning their surface properties, reducing 1/f noise, neutralizing surface charge to favor capture of DNA and other negative polyelectrolytes, and controlling the diameter and aspect ratio of the pores with near single Ångstrom precision. The control over the chemical and physical nature of the pore surface provided by atomic layer deposition produced a higher yield of functional nanopore detectors.

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