self-heating is a severe problem for high-power gallium nitride (Gan) electronic and optoelectronic devices. Various thermal management solutions, for example, flip-chip bonding or composite substrates, have been attempted. However, temperature rise due to dissipated heat still limits applications of the nitride-based technology. Here we show that thermal management of Gan transistors can be substantially improved via introduction of alternative heat-escaping channels implemented with few-layer graphene-an excellent heat conductor. The graphene-graphite quilts were formed on top of AlGan/Gan transistors on siC substrates. using micro-Raman spectroscopy for in situ monitoring we demonstrated that temperature of the hotspots can be lowered by ~20 °C in transistors operating at ~13 W mm − 1 , which corresponds to an order-of-magnitude increase in the device lifetime. The simulations indicate that graphene quilts perform even better in Gan devices on sapphire substrates. The proposed local heat spreading with materials that preserve their thermal properties at nanometre scale represents a transformative change in thermal management.

We show that vapors of different chemicals produce distinguishably different effects on the low-frequency noise spectra of graphene. It was found in a systematic study that some gases change the electrical resistance of graphene devices without changing their low-frequency noise spectra while other gases modify the noise spectra by inducing Lorentzian components with distinctive features. The characteristic frequency f(c) of the Lorentzian noise bulges in graphene devices is different for different chemicals and varies from f(c) = 10-20 Hz to f(c) = 1300-1600 Hz for tetrahydrofuran and chloroform vapors, respectively. The obtained results indicate that the low-frequency noise in combination with other sensing parameters can allow one to achieve the selective gas sensing with a single pristine graphene transistor. Our method of gas sensing with graphene does not require graphene surface functionalization or fabrication of an array of the devices with each tuned to a certain chemical.

The charge-density-wave (CDW) phase is a macroscopic quantum state consisting of a periodic modulation of the electronic charge density accompanied by a periodic distortion of the atomic lattice in quasi-1D or layered 2D metallic crystals. Several layered transition metal dichalcogenides, including 1T-TaSe, 1T-TaS and 1T-TiSe exhibit unusually high transition temperatures to different CDW symmetry-reducing phases. These transitions can be affected by the environmental conditions, film thickness and applied electric bias. However, device applications of these intriguing systems at room temperature or their integration with other 2D materials have not been explored. Here, we demonstrate room-temperature current switching driven by a voltage-controlled phase transition between CDW states in films of 1T-TaS less than 10 nm thick. We exploit the transition between the nearly commensurate and the incommensurate CDW phases, which has a transition temperature of 350 K and gives an abrupt change in current accompanied by hysteresis. An integrated graphene transistor provides a voltage-tunable, matched, low-resistance load enabling precise voltage control of the circuit. The 1T-TaS film is capped with hexagonal boron nitride to provide protection from oxidation. The integration of these three disparate 2D materials in a way that exploits the unique properties of each yields a simple, miniaturized, voltage-controlled oscillator suitable for a variety of practical applications.

We investigated Raman spectra of single-layer and multi-layer graphene under ultraviolet laser excitation at the wavelength =325 nm. It was found that while graphene's G peak remains pronounced in UV Raman spectra, the 2D-band intensity undergoes severe quenching. The evolution of the ratio of the intensities of the G and 2D peaks, I(G)/I(2D), as the number of graphene layers n changes from n=1 to n=5, is different in UV Raman spectra from that in conventional visible Raman spectra excited at the 488-nm and 633-nm wavelengths. The 2D band under UV excitation shifts to larger wave numbers and is found near 2825 cm -1 . The observed UV Raman features of graphene were explained by invoking the resonant scattering model. The obtained results contribute to the Raman nanometrology of graphene by providing an additional metric for determining the number of graphene layers and assessing its quality. +On leave from the

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