2009
DOI: 10.1007/s10853-009-3455-2
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Low-frequency magnetoelectric interactions in single crystal and polycrystalline bilayers of lanthanum strontium manganite and lead zirconate titanate

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Cited by 20 publications
(16 citation statements)
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“…The physical mechanism of this behavior can be given by following discussions. The large ME effect may be arose from the AC field initiated from dynamic Joule magnetostriction, caused by low-fields domain wall motion and large-fields rotation [15]. This might explain the sharp increase of α E in the low field.…”
Section: Resultsmentioning
confidence: 95%
“…The physical mechanism of this behavior can be given by following discussions. The large ME effect may be arose from the AC field initiated from dynamic Joule magnetostriction, caused by low-fields domain wall motion and large-fields rotation [15]. This might explain the sharp increase of α E in the low field.…”
Section: Resultsmentioning
confidence: 95%
“…As shown in Fig. 7 , the magnetoelectric coupling coefficient α E rockets with the increase of the dc bias magnetic field H dc provided by an electromagnet to eliminate the influence of the external magnetic field and the frequency-doubling effect caused by magnetostrictive materials and reaches to the vertex ( α BNF/NZF = 51.32, α NZF/BNF = 47.18, mV/cm·Oe −1 ) at 300 Oe where the effective magnetostrictive strain λ approaches its saturation [ 30 ]; then, it will produce a nearly constant electric field in the BNF ferroelectric phase, and thereby, α E descends gently to the bottom with the further increase of H dc . The value of α E is much higher than that of the Bi 3.15 Nd 0.85 Ti 3 O 12 -NiFe 2 O 4 bilayer films [ 24 ].…”
Section: Resultsmentioning
confidence: 99%
“…51) for the BNT-LCMO lms at a low temperature might be due to the enhancement of the magnetic-mechanical-electric interactions between the magnetic and ferroelectric phases heteroepitaxially strained with each other across the interface. [54][55][56] Fig. 12 The ME voltage coefficient of BNT-LCMO composite thin films at different temperatures: (a) 300 K, (b) 200 K, and (c) 100 K.…”
Section: Resultsmentioning
confidence: 99%