Low-Frequency Noise Characteristics for Various ${\rm ZrO}_{2}$-Added ${\rm HfO}_{2}$-Based 28-nm High-$k$/Metal-Gate nMOSFETs

A room temperature process for the fabrication of amorphous indium gallium zinc oxide thin-film transistors with co-sputtered ZrxSi1−xO2Gate dielectric and improved electrical and hysteresis performance

“…Among these, note that the ZrO 2 gate dielectric is one of the most promising materials because of its high dielectric constant (κ ∼ 25), large band gap (E g ∼ 5.6 eV), low leakage current, and low bulk trap density. [29][30][31] Several studies have reported that IGZO TFTs with a ZrO 2 gate dielectric might have good performance. 32,33) In addition, it has been reported that the suitable incorporation of SiO 2 with high-κ materials could modulate the dielectric constant, reduce the density of bulk defects, smooth the film surface, and improve the trap density of channel=dielectric interfaces.…”

Investigation of trap properties of Hf0.83Zr0.17O2high-kgate stack p-type MOSFETs by low-frequency (1/f) noise and random telegraph noise analyses

“…Previous studies were mainly focused on n-type MOSFETs (nMOSFETs) with Hf x Zr 1¹x O 2 HK gate stacks. [16][17][18][19] However, in general, semiconductor manufacturers prefer to use the same HK gate stack for fabricating n-and p-MOSFETs simultaneously. This is because depositing gate dielectrics in the same processing step can avoid the introduction of extra defects and thus reduce the cost of production.…”

Improved low-frequency noise for 0.3nm EOT thulium silicate interfacial layer

“…In this paper we evaluate the low-frequency noise (LFN) in devices with TmSiO IL EOT of 0.3 nm and compare to state-of-the art LFN in published SiO x /HfO 2 devices. This work is different from benchmark studies where HfO, ZrO and ALO and layered combination of these have been used as gate materials [11] [12]. Few studies have been reported on intergration of Tm 2 O 3 as high-k dielectrics in MOS devices [7] and as capping layer for La 2 O 3 gate stacks [13].…”