Low-frequency noise characteristics of GaN-based UV photodiodes with AlN/GaN buffer layers prepared on Si substrates

Chang, Shoou Jinn; Lu, Chih-Wei; Chiou, Yu−Zung; Chuang, Ricky W.; Lin, Hung Chieh

doi:10.1016/j.jcrysgro.2009.01.044

Cited by 9 publications

(4 citation statements)

References 32 publications

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“…2, the transmission begins in 400 nm approximately, so the bandgap of the sample is 3.1 eV [8] about, this is roughly agreement with the effective band gap (2.66eV), obtained from XRD, which implied the Vegard's law be reasonable. In the n =2.38 [10], so the thickness of the sample d=2.6 µ m.…”

Section: Results and Analysismentioning

confidence: 99%

Surface Emission of InxGa1-x N/GaN Espaliers Grown by MOCVD under Different Optical Excitation

Zhu

Yan

Wang

et al. 2012

AMR

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Photoluminescence properties of InGaN film grown on sapphire substrates by metal organic chemical vapor deposition(MOCVD) was experimentally Investigation. The x-ray diffraction(XRD), transmission spectra, PL spectrum were used. The result of XRD shows that the mole composition of In in the InGaN film is estimated be 0.2 approximately. The band gap of the sample is calculated to be 2.66eV. A clear oscillation from F-P cavity could be observed on transmission spectra. There are three main peaks from the surface emission InGaN espaliers being excited on different light sources and different excitation power density. which can be explained the broad PL come from the difference of In composition modulated by was modulated due to F-P cavity arising from surface of sample. . It is found that there is some relationship between the position of the peaks in the PL spectra, the wavelength and intensity of power density and the F-P cavity.PACS: 73.61.

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Section: Results and Analysismentioning

confidence: 99%

Surface Emission of InxGa1-x N/GaN Espaliers Grown by MOCVD under Different Optical Excitation

Zhu

Yan

Wang

et al. 2012

AMR

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“…MSM photodetectors are subjected to keen interest among different type of detectors because of ease of fabrication, low dark current, small capacitance, and the suit-ability for integration in an optical receiver [2]. Many research groups [3][4][5] have extensively fabricated MSM photodetector based on GaN, whereas few reports are available concerning the InGaN photodetectors [6]. Porous III-nitride compounds are promising materials for optoelectronic [7], chemical and biochemical sensors [8] because of their unique optical and electrical properties compared with bulk materials [9], but the reports on it are still very rare [10].…”

Section: Introductionmentioning

confidence: 99%

Chalcogenide nanostructures for energy conversion

André¹,

Nabiev²

2022

Theo. NANOTECHNOLOGY

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In this study, the characteristics of metal-semiconductor-metal (MSM) photodetector based on a porous In0.27Ga0.73N thin ﬁlm were reported. Nanostructured porous ﬁlm was synthesized using the UV-assisted electrochemical etching technique. The formed pores were dissimilar in terms of shape and size. The effect of annealing in the range of 300e500 o C on Pt/In0.27Ga0.73N was investigated by I-V measurements. Schottky barrier height was at maximum value under 500 o C. The fabricated MSM photodetector shows photovoltaic characteristics in the green region of the electromagnetic spectrum. The device responsivity increased with increasing the bias voltage.

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“…[1][2][3][4][5][6][7][8] For example, it is useful for ultraviolet (UV) photodetectors with a high UV/visible rejection ratio because of the large band-gap energy. 9,10) However, the thermal and lattice mismatches between Si and GaN are the handicap for its applications in GaN-based optoelectronic devices. A large lattice mismatch (17%) leads to a high dislocation density, while a large thermal expansion coefficient mismatch (54%) will cause a huge tensile strain and cracks are generally observed after the system cools to room temperature.…”

Section: Introductionmentioning

confidence: 99%

Performance improvement of GaN-based metal–semiconductor–metal photodiodes grown on Si(111) substrate by thermal cycle annealing process

Lin

Huang

2014

Jpn. J. Appl. Phys.

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A simple thermal cycle annealing (TCA) process was used to improve the quality of GaN grown on a Si substrate. The X-ray diffraction (XRD) and etch pit density (EPD) results revealed that using more process cycles, the defect density cannot be further reduced. However, the performance of GaN-based metal–semiconductor–metal (MSM) photodiodes (PDs) prepared on Si substrates showed significant improvement. With a two-cycle TCA process, it is found that the dark current of the device was only 1.46 × 10−11 A, and the photo-to-dark-current contrast ratio was about 1.33 × 105 at 5 V. Also, the UV/visible rejection ratios can reach as high as 1077.

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Low-frequency noise characteristics of GaN-based UV photodiodes with AlN/GaN buffer layers prepared on Si substrates

Cited by 9 publications

References 32 publications

Surface Emission of InxGa1-x N/GaN Espaliers Grown by MOCVD under Different Optical Excitation

Surface Emission of InxGa1-x N/GaN Espaliers Grown by MOCVD under Different Optical Excitation

Chalcogenide nanostructures for energy conversion

Performance improvement of GaN-based metal–semiconductor–metal photodiodes grown on Si(111) substrate by thermal cycle annealing process

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