Low frequency noise characterization in n-channel FinFETs

Abstract

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Flicker noise in n-channel nanoscale tri-gate fin-shaped field-effect transistors

“…[5][6][7][8][9][10] Extensive investigations of the Lorentzian components with temperature were reported recently, identifying the traps originating from process steps used for realization of the source and drain contacts and traps related to the process steps used for the channel optimization. 6,9 Regarding the 1/f noise, it has been ascribed to carrier number fluctuations (CNF) due to carrier exchange between the gate dielectric traps near the interface and the channel, [5][6][7][8] whereas the charge fluctuations in the gate dielectric can induce additional fluctuations of the carrier mobility, giving rise to the so-called correlated mobility fluctuations (CMF). 11 Recently, we have proposed an analytical generic CMF compact noise model for single-gate n-channel and p-channel nanoscale bulk metal-oxide-semiconductor fieldeffect transistors (MOSFETs), describing the 1/f noise accurately and continuously in all operation regions.…”

Identification of Si film traps in p-channel SOI FinFETs using low temperature noise spectroscopy

“…The use of the additional process steps (sSOI, CESL, SEG) in order to boost the device performances leads to an increase of the number and of the maximum of the effective trap density of the traps located in the Si film. However, the estimated effective densities of the identified traps have the same order of magnitude as those identified in n-channels FinFET [23].…”

Detailled characterisation of SOI n-FinFETs at very low temperature

“…At room temperature, the Ilf noise behaviour was already discussed in [10] and attributed to carrier number fluctuations due to carrier trapping in the oxide layer. At 10K operation, the extracted Ilf noise level is found to be independent on the variations of the applied gate overdrive in weak inversion.…”