IEEE Electron Device Lett.
 2015
DOI: 10.1109/led.2015.2494678
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Low-Frequency Noise Characterization of Ultra-Low Equivalent-Oxide-Thickness Thulium Silicate Interfacial Layer nMOSFETs

Maryam Olyaei
1
,
E. Dentoni Litta
2
,
Per‐Erik Hellström
3
et al.
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