Low-frequency noise in modern bipolar transistors: impact of intrinsic transistor and parasitic series resistances

Abstract

Abstract-In modern submicrometer transistors, the influence of the internal base and emitter series resistances, on both the I-V characteristics and the LF noise at higher bias currents, becomes important. In this paper expressions are presented for the LF noise in transistors, where the influence of the series resistances has been taken into account. The expressions have been compared with recent experimental results from the literature obtained from modern submicrometer (heterojunction) bipolar transistors. At low forward currents the LF noise in such transistors is determined by spontaneous fluctuations in the base and collector currents. In most transistors at higher forward currents, the parasitic series resistances and their noise become important.

Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors

“…The Hooge formula, for example, states that 1/ f noise amplitude increases as the inverse of the total number of carriers in the noise-generating element. [7][8][9][10][11][12][13][14] The scaling rule has important consequences for transistor analysis, as it may serve to associate the location of the noise sources with a particular transistor element if the noise amplitude is found to scale correctly with its dimensions. Numerous attempts have been made to establish such rules for 1/ f noise amplitude scaling with emitter perimeter, emitter/ base interface area, or emitter/base oxide thickness and Refs.…”

“…Numerous publications have been devoted to their fabrication, static characteristics, 1-3 and low frequency ͑LF͒, 1/ f noise studies. [4][5][6][7][8][9][10][11][12][13] This article addresses the problem of 1/ f noise in QSA-BJTs and, in particular, its scaling with transistor dimensions.…”

Noise in 6H-SiC ion implanted p–n diodes: Effect of the active area on the noise properties of these junctions

“…The dependence S I ϰI x , with xϷ3/2, has been observed for the 1/f noise in bipolar and heterojunction bipolar transistors. 22 However, the frequency exponent ␤Ϸ1 and the bias dependence for our diodes indicate that the GR is not the dominant mechanism. This can be explained by the localization of carriers in interface states which leads to a distribution of time constants , originating from a superposition of Lorentzian generation and recombination processes at traps.…”

Measurement and characterization of low frequency noise collector current in 0.13 μm SiGe:C HBTs

“…As can be seen in fig.8, this factor is approximately 5 orders of magnitude smaller than S IC , thus the relation (1) can though be simplified into the following relation: Then, according to Kleinpenning [14] the evolution of S IC with I C in (4) is represented as follow:…”