Low-Frequency Noise Measurements of Bipolar Devices Under High DC Current Density: Whether Transimpedance or Voltage Amplifiers

Souza, Antonio Lisboa de; Nallatamby, Jean-Christophe; Prigent, Michel

doi:10.1109/emicc.2006.282764

Cited by 11 publications

(4 citation statements)

References 5 publications

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“…Hyperabrupt microwave varactors (MHV500), SiGe microwave transistors (BFP740F) measured with the collector left unconnected [11], and Si high frequency transistors (BFQ67) under forward active operation (that is, the diodes in Fig.2 are replaced by the base-emitter contacts of the transistor, while V ce is kept greater than V ce−sat by a circuit not shown in that figure). Figures 5 and 6 present the dependency of S Vnoise around DC on I 1 for pump frequencies of 10 and 100kHz respectively.…”

Section: Voltage Noise From Measurementsmentioning

confidence: 99%

On the cyclostationary properties of the 1/f noise of microwave semiconductor devices

Souza

Nallatamby

Prigent

et al. 2008

2008 IEEE MTT-S International Microwave Symposium Digest

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This paper addresses, from an experimental perspective, the long-standing question on whether the 1/f noise of microwave semiconductor devices should be considered cyclostationary in compact models. By using a simple instrumentation setup and basic mixer concepts, it will be shown that the external equivalent current noise sources of such devices simply CANNOT be stationary. To demonstrate our ideas, a through experimental analysis was carried out on purely-resistive bridge circuits made up of microwave varactors and transistors under large-signal operation whose DC current component is kept constant.When computing the voltage noise power of specific circuit arrangements, errors in excess of 20dB may be induced if the stationary concept is adopted. The difference between the stationary or cyclostationary concepts will be simulated with the aid of the simulator ADS from Agilent.

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Section: Voltage Noise From Measurementsmentioning

confidence: 99%

On the cyclostationary properties of the 1/f noise of microwave semiconductor devices

Souza

Nallatamby

Prigent

et al. 2008

2008 IEEE MTT-S International Microwave Symposium Digest

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“…For each value of I 0 , an impedance probe (HP4194A) is connected to one of the DUTs, and the impedance seen by the equivalent current-noise source of the DUT (in this case given by equation (9)) is measured. The measured impedance will be used to convert the voltage noise PSD to be measured into a current-noise PSD [23].…”

Section: Methodsmentioning

confidence: 99%

“…This value is often used in the static case to compute the equivalent short-circuit current-noise source from the voltage noise measured [23].…”

Section: Circuit Under Investigationmentioning

confidence: 99%

Experimental characterization of the cyclostationary low-frequency noise of microwave semiconductor devices under large signal operation

Souza

Dupouy²,

Nallatamby³

et al. 2010

Int. j. microw. wirel. technol.

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International audiencehis paper presents a detailed experimental analysis of the cyclostationary properties of low-frequency (LF) noise sources of microwave bipolar devices, in order to improve the LF noise description in compact models. Such models are used to help designers on predicting circuit performances such as phase and amplitude noise in oscillators. We start by reviewing the most relevant experimental and simulation results on the subject, and then investigate the model of conductance fluctuations proposed to explain the 1/f noise of carbon resistors. This simple linear case serves as a basis for understanding the complex case of a non-linear device under large-signal periodic operation. We then present the large-signal small-signal analysis of a pumped junction, focusing on the process of converting the fundamental LF noise process, a current fluctuation, into voltage fluctuations. We show why a stationary noise model would lead to an increase of the voltage noise observed around DC when the device is pumped, while the voltage noise would decrease if a cyclostationary model was used. A great amount of experimental data is presented not only to support our analysis, but also as a mean to distinguish between the two noise processes under consideration: stationary or cyclostationary. The goal of our noise measurement technique was to maximize the difference between those two concepts. Throughout the paper, we revisit some known concepts and show how some experimental results may lead to misinterpretations

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“…Noise measurements consist in successively measuring these two noise sources I ecc and I scc . To do that, two low value resistances R in and R out , properly chosen (R in Z in0 and R out Z out0 ), are successively connected to each access in order to short-circuit the corresponding source [13]. Moreover, to achieve this condition, a huge capacitance is successively connected to the transistor access (in parallel with R in or R out of Figure 7(b) and 7(c)) where we do not measure the noise.…”

Section: Modeling Of Transistor Low-frequency Noise Sourcesmentioning

confidence: 99%

Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator

Laurent

Nallatamby

Prigent

et al. 2012

Active and Passive Electronic Components

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This paper presents the design of an MMIC oscillator operating at a 38 GHz frequency. This circuit was fabricated by the III–V Lab with the new InP/GaAsSb Double Heterojunction Bipolar Transistor (DHBT) submicronic technology (We=700 nm). The transistor used in the circuit has a 15 μm long two-finger emitter. This paper describes the complete nonlinear modeling of this DHBT, including the cyclostationary modeling of its low frequency (LF) noise sources. The specific interest of the methodology used to design this oscillator resides in being able to choose a nonlinear operating condition of the transistor from an analysis in amplifier mode. The oscillator simulation and measurement results are compared. A 38 GHz oscillation frequency with 8.6 dBm output power and a phase noise of −80 dBc/Hz at 100 KHz offset from carrier have been measured.

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Low-Frequency Noise Measurements of Bipolar Devices Under High DC Current Density: Whether Transimpedance or Voltage Amplifiers

Cited by 11 publications

References 5 publications

On the cyclostationary properties of the 1/f noise of microwave semiconductor devices

On the cyclostationary properties of the 1/f noise of microwave semiconductor devices

Experimental characterization of the cyclostationary low-frequency noise of microwave semiconductor devices under large signal operation

Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator

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