Low-frequency noise properties of double channel AlGaN/GaN HEMTs

Jha, Shrawan Kumar; Surya, C.; Chen, Kevin J.; Lau, Kei May; Jelencovic, E.

doi:10.1016/j.sse.2007.10.002

Cited by 26 publications

(10 citation statements)

References 29 publications

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“…Therefore, purely dual-channel AlN/GaN/AlN/GaN HEMTs have also been fabricated on the same wafer, serving as both a calibration structure for CV and IV characterization as well as a proxy to the recessed-gate HEMT access region. Several reports have been made on nitride-based dual-channel HEMTs with AlGaN or AlInN barriers with the intent to increase drain current density or assess HEMT noise characteristics and subsequently disregarded gate lag performance [20], [21], [22]. A notable attribute of using the AlN/GaN heterostructure for the HEMT design reported in this work is that the AlN barrier layers are inherently thin (< 5 nm), which allows extremely shallow channels and therefore, multiple channel designs to maintain channels in close proximity to the surface.…”

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confidence: 99%

“…A notable result of the recessed-gate HEMT is that after the GLR sequence was stopped and restarted, the initial drain current density had not diminished despite the absence of a passivation layer other than the thin Al 2 O 3 gate insulation. Although other reports have been made on nitride-based dualchannel HEMTs with alloyed barrier layers [20], [21], [22], none have included gate lag measurements. To the best of our knowledge, this is the first report on dual-channel AlN/GaN HEMT gate lag as well as its innovation to the recessed-gate HEMT architecture.…”

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confidence: 99%

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Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

Deen

Storm

Katzer

et al. 2016

Applied Physics Letters

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A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics ft/fmax of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with ft/fmax of 48/60 GHz.

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confidence: 99%

mentioning

confidence: 99%

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

Deen

Storm

Katzer

et al. 2016

Applied Physics Letters

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“…AlGaN/GaN fin-MOSHEMTs with a Ga2O3 gate insulator deposited by the novel vapor cooling condensation system is a promising candidate in high-power and high-frequency applications. Ga2O3 [27] SiO2 [28] Ni/Au Schottky [29] Pt/Au Schottky [30] This work Hooge's coefficient 9.710 −5 1.010 −3 1.010 −3 1.610 −3 1.0 10 −3 5.110 −5…”

Section: Discussionmentioning

confidence: 88%

Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer

Lee

Chang

et al. 2021

IEEE J. Electron Devices Soc.

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In this work, the properties of gallium oxide (Ga2O3) and its excellent interface properties to GaN-based materials are explored as a gate insulator layer for GaN-based metal-oxidesemiconductor high-electron mobility transistors (MOSHEMTs). A novel vapor cooling condensation system was used to deposit the high quality Ga2O3 films with high insulation and low defect suitable for gate insulator layer. The characteristics of the Ga2O3 films were further explored by implementing GaN-based fin-channel array MOSHEMTs with recessed-gates and different channel widths. Compared to planar channel structure, the direct current, high frequency, and flicker noise performances were enhanced in the fin-channel MOSHEMTs with Ga2O3 gate insulator layer. For the GaN-based fin-channel array MOSHEMTs with 300-nm-wide channel, the devices exhibited superior performances of maximum extrinsic transconductance of 194.2 mS/mm, threshold voltage of −1.4 V, extrinsic unit gain cutoff frequency of 6.4 GHz, maximum oscillation frequency of 14.8 GHz, and normalized noise power of 8.45  10 −15 Hz −1 . It was also demonstrated that the associated performances were improved by reducing the width of fin-channel array. Index Terms-Ga2O3 gate insulator layer, GaN-based MOSHEMTs, Laser interference photolithography system, Finchannel array, Vapor cooling condensation system. I. INTRODUCTIONGaN-based high-electron mobility transistors (HEMTs) are suitable for high temperature, high power, and high frequency applications [1], [2], due to wide bandgap as well as good electron transport properties and high sheet electron density of two-dimensional electron gas (2-DEG) residing in the available Manuscript received ? ?, 2021.

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“…Emission coefficient, e 0 (E) is calculated using (8) and the relationship τ = τ 0 exp (E a /KT) where τ 0 is the inverse phonon frequency and E a is the activation energy [8].…”

Section: /F Low Frequency Noise and Time Constant Modelingmentioning

confidence: 99%

Non-fundamental low frequency noise theory: Drain noise-current modeling of AlGaN/GaN HFETs

Manouchehri

Valizadeh

Kabir

2011

2011 21st International Conference on Noise and Fluctuations

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This work presents a theoretical study on the 1/f low frequency noise (LFN) based on the fluctuations in the number of carriers in the two-dimensional electron gas (2DEG) channel of AlGaN/GaN self-aligned HFETs. This study validates the role of thermally activated trap levels on 1/f LFN characteristics. Simulation results confirm that the low frequency noise bahvior follows characteristic of 1/f γ with frequency exponent γ between 0 and 2. At room temperature the simulation results are compared with the experiments. The effect of temperature is also studied on the noise behavior. It is found that the frequency exponent can vary with temperature.

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Low-frequency noise properties of double channel AlGaN/GaN HEMTs

Cited by 26 publications

References 29 publications

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer

Non-fundamental low frequency noise theory: Drain noise-current modeling of AlGaN/GaN HFETs

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