2011
DOI: 10.1149/1.3615176
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Low-Frequency Noise Study of p-Channel Bulk MuGFETs

Abstract: The low-frequency (LF) noise in p-channel bulk Multiple-Gate Field-Effect Transistors (MuGFETs) with 2.5 nm SiON gate oxide has been investigated in the ohmic regime from weak to strong inversion. It is shown that both 1/f-like noise and Generation-Recombination (GR) noise are present, giving rise to a wide device-to-device scatter in the spectral density. The 1/f noise is dominated by number fluctuations from which an effective trap density in the range 5×1017 cm-3eV-1 has been derived. At the same time, it i… Show more

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Cited by 11 publications
(3 citation statements)
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“…This means that, contrary to the case for p-type FinFETs, (110) fin sidewalls are beneficial for n-type FinFETs. Further insight into device characteristics was obtained by performing low-frequency (LF) noise analysis, known to be a highly sensitive technique to the gate stack quality in regards to traps/defects (29)(30)(31)(32). Figure 9 shows the normalized input-referred noise spectral density values {S VG f/[S VG f(REF)]} for p-type (a) and n-type (b) planar vs. FinFET devices, computed from the measured I D noise spectral density (S I ).…”
Section: Reliability and Noise Behavior Of Aggressively Scaled N-and ...mentioning
confidence: 99%
“…This means that, contrary to the case for p-type FinFETs, (110) fin sidewalls are beneficial for n-type FinFETs. Further insight into device characteristics was obtained by performing low-frequency (LF) noise analysis, known to be a highly sensitive technique to the gate stack quality in regards to traps/defects (29)(30)(31)(32). Figure 9 shows the normalized input-referred noise spectral density values {S VG f/[S VG f(REF)]} for p-type (a) and n-type (b) planar vs. FinFET devices, computed from the measured I D noise spectral density (S I ).…”
Section: Reliability and Noise Behavior Of Aggressively Scaled N-and ...mentioning
confidence: 99%
“…However, in the weak inversion region of n-channel FinFETs, in some cases the mobility fluctuation was found to be the dominant 1/f noise generation mechanism [108]. Recently, the LF noise in the linear region from weak to strong inversion has been investigated in p-channel FinFETs, with channel length ranging from 70 nm to 1 μm [111]. It has been shown…”
Section: Introductionmentioning
confidence: 99%
“…that in p-channel FinFETs the LF noise is composed of both 1/f noise governed by CNF and g-r noise originating from traps in the gate oxide [111].…”
Section: Introductionmentioning
confidence: 99%