Low frequency noise variability in high-k/metal gate stack 28nm bulk and FD-SOI CMOS transistors

New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs

“…13 shows that the average Vth scales as the reciprocal square root of device area for different sampling times (t s ). This is expected since LFN follows the same Pelgrom's law for area scaling, as static mismatch does [14,16]. We also did not observe any difference between Vth from linear and saturation regions of operation.…”

“…5, the state-of-the-art N t values obtained for the 14 nm FDSOI are slightly better than those obtained for 28 nm FDSOI [14]. Fig.…”

Evolution of low frequency noise and noise variability through CMOS bulk technology nodes

“…On the contrary, the histograms of the normalized drain current noise do show a log-normal behavior [10]. As shown in Fig.…”

“…The correlated mobility fluctuations were expanded in all regions of operation [9]. On the other hand, the LFN statistical variability has already been explained with a Monte-Carlo theoretical model based on the superposition of many RTS fluctuators [10].…”

Temperature dependence of LF noise in UTBB nMOSFETs

“…On the other hand, it is known that the SOI substrate is responsible for inducing excess GR noise [6,7] so that to replace the standard thick buried oxide, it is necessary to maintain the same high quality and reliability of the dielectric films since reduced dimensions are more susceptible to fluctuations induced by traps which increase the variability of several parameters, including the noise performance [8]. One way to assess the quality of the oxides is through low frequency noise (LFN) analysis, which is used as a non-destructive characterization tool [9]. Studying as a function of temperature the generation-recombination (GR) noise, equivalent to a Lorentzian type of spectra, permits to identify the nature of the trap from an Arrhenius plot derived from the noise measurements.…”