Low-Hydrogen-Content Silicon Nitride Deposited at Room Temperature by Inductively Coupled Plasma Deposition

Zhou, Haiping; Elgaid, K.; Wilkinson, C. D. W.; Thayne, Iain

doi:10.1143/jjap.45.8388

Cited by 49 publications

(32 citation statements)

References 12 publications

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“…Recently, major interest has been placed on the development of novel PECVD techniques for the deposition of high-density SiNx films at low temperature with reduced surface damages and controlled residual stress. As a result, the most effective methods to produce high-quality dielectric films at low temperatures (≤ 100°C) are the high-density plasma techniques such as electron cyclotron resonance plasma (ECR-CVD) [53][54][55][56] and inductively coupled plasma CVD (ICP-CVD) [57][58][59][60][61][62].…”

Section: Inorganic Dielectric Materialsmentioning

confidence: 99%

“…Chemical composition (Si/N ratio and H-content) and density are the physicochemical properties that most affect the barrier properties of the SiNx films and their resistance to corrosion [57][58][59][60][61][62][63]. A Si/N ratio close to 0.75 (stoichiometric silicon nitride Si3N4) and a high density thus favour strong resistance to chemical attack (high bond strength, minimization of the dandling bonds).…”

Section: Deposition Of Icp-cvd Low Temperature Sinx Filmsmentioning

confidence: 99%

“…Since the ICP source can easily dissociate the reactant gases, effect of substrate temperature is lower than effects of ICP power, chamber pressure and gas flows [62]. Reducing deposition temperature brings about much more versatility in the microfabrication processes and ensures technological compatibility with photoresist layers used to pattern the deposited SiNx films.…”

Section: Deposition Of Icp-cvd Low Temperature Sinx Filmsmentioning

confidence: 99%

“…Reducing deposition temperature brings about much more versatility in the microfabrication processes and ensures technological compatibility with photoresist layers used to pattern the deposited SiNx films. Nevertheless, the lower this temperature, the more difficult it is to obtain high quality films [60,62]. Indeed, substrate temperature, by favouring hydrogen release from the surface, has an impact on film properties, i.e.…”

Section: Deposition Of Icp-cvd Low Temperature Sinx Filmsmentioning

confidence: 99%

“…According to Xu [59], such an increase is also encouraging the formation of stable Si-N bonds and higher quality films as it reduces the film hydrogen content. Increasing ICP power may also generate a higher surface sputtering [59], even if the ICP-CVD technique drastically reduces the surface damage induced by ion bombardment [62].…”

Section: Deposition Of Icp-cvd Low Temperature Sinx Filmsmentioning

confidence: 99%

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Final capping passivation layers for long-life microsensors in real fluids

Vanhove¹,

Tsopela²,

Bouscayrol³

et al. 2013

Sensors and Actuators B: Chemical

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Final capping insulation layer is a critical step in the microfabrication process that determines the lifetime of analytical microsensors in real fluids. Actual processes encounter considerable limitations as (i) organic passivation layers do not provide a satisfying long-term protection against liquids and (ii) inorganic passivation processes (dielectric materials deposition and patterning) are very aggressive for the underlying layers, imposing severe constraints on the integration of sensitive materials. We present here a low temperature deposition process of high quality silicon nitride Si3N4 using ICP-CVD technique combined with a lift-off based process to pattern conformal deposition, in order to avoid harsh treatments such as wet or dry etching.High-density SiNx films with low H content (5 x 10 20 at/cm 3 ) were synthesized at 100°C with controlled uniformity (5%), refractive index (2.025 at 830 nm), etch rate in buffered hydrofluoric acid (8 nm/min), residual stress (-500 MPa), breakdown field (3.9 MV/cm) and dielectric constant (6.0). In order to validate the compatibility of this passivation process with long-term fluids analysis, microelectrodes were fabricated and their lifetime in natural seawater was evaluated. Their active surfaces were defined by patterning the insulation layer. Special care was given to their accurate estimation through the modelling of chronoamperometric curves.Reproducible and stable electrochemical response was obtained for months (> 50 days), demonstrating a considerably extended lifetime in harsh liquid media.

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Section: Inorganic Dielectric Materialsmentioning

confidence: 99%

Section: Deposition Of Icp-cvd Low Temperature Sinx Filmsmentioning

confidence: 99%

Section: Deposition Of Icp-cvd Low Temperature Sinx Filmsmentioning

confidence: 99%

Section: Deposition Of Icp-cvd Low Temperature Sinx Filmsmentioning

confidence: 99%

Section: Deposition Of Icp-cvd Low Temperature Sinx Filmsmentioning

confidence: 99%

See 3 more Smart Citations

Final capping passivation layers for long-life microsensors in real fluids

Vanhove¹,

Tsopela²,

Bouscayrol³

et al. 2013

Sensors and Actuators B: Chemical

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Nanoribbon‐Based Flexible High‐Performance Transistors Fabricated at Room Temperature

Zumeit

Navaraj

Shakthivel

et al. 2020

Adv Elect Materials

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if their application is limited to small and compact areas as for economic reasons and integration related difficulties it is not practical to have them over the large areas. As a result, the printed devices and circuits based on nanostructures (NSs) of highmobility materials such as Si nanowires (NWs), Si nanoribbons (NRs), carbon nanotubes (CNTs), GaAs NWs, etc. have been explored. [12][13][14] The excellent performance (e.g., high mobility and On/Off ratio) offered by some of the NS-based devices is summarized in Table 1. A major challenge with NSs based devices is that some of the critical fabrication steps (e.g., NSs fabrication/growth, doping, high-k dielectric deposition) require high-temperatures that are incompatible with the flexible substrates such as plastics.Currently, the popular method to address this issue is to transfer print NSs from the native or growth substrates to the receiving flexible substrate using a stamp or career substrate. [12,15,16] Since the high temperature fabrication steps are carried out before transfer (i.e., when NSs are still on the native or growth substrates), this method decouples the high temperature process steps from the low-temperature steps (e.g., metallization) that are carried out after transfer to realize devices on flexible substrates, as shown in Figure 1. Previous works have carried out most of the steps, including high temperature dielectric deposition which yielded good device characteristics, [17,18] before transfer printing. Transfer printing of such fully formed field effect transistors (FETs) increases the process complexities which also raises the technology cost. An alternative method is to use substrates such as metal foils, which can withstand higher processing temperatures. However, additional fabrication steps such as insulation on foils increase the cost of fabrication and for this reason manufacturing through low-temperature processing steps is preferred. The low-temperature processing keeps the transfer printing process highly robust and could aid fabrication of FETs over large area flexible substrates as it is compatible with methods such as roll-to-roll technology. Thus, key challenge is to develop high-performance NRFET by dielectric deposition preferably at room temperature (RT). Many experimental techniques, such as atomic layer deposition (ALD), low-pressure chemical vapor deposition (LPCVD), plasma-enhanced (PE)-CVD, inductively coupled plasma (ICP)-CVD, e-beam evaporation, etc., have been successfully used to develop high quality dielectric films in the past. [19] ALD and LPCVD techniques typically use growth temperatures in Si-nanoribbon-based high-performance field-effect transistors (FETs) with room temperature (RT)-deposited dielectric are presented. The distinct feature of these devices is that the high-quality SiN x dielectric deposition at RT, directly on the transfer-printed nanoribbons, is compatible with most flexible substrates. The performance of these FETs (mobility ≈656 cm 2 V −1 s −1 and on/off ratio >10 6 ) is on par with ...

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Radio frequency bias power effects on silicon nitride film deposited in SiH4-NH3 using a plasma-enhanced chemical vapor deposition

Kim

2009

Met. Mater. Int.

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Silicon nitride films were deposited at room temperature in a plasma-enhanced chemical vapor deposition system. Ion energy and ion energy flux were measured with an ion energy analysis system. The effects of the radio frequency bias power on the ion energy distribution, deposition rate, refractive index, and surface roughness were examined along with the correlations between the ion energy diagnostics and film properties. The bias power varied from 30 W to 90 W. The surface roughness measured by atomic force microscopy was detailed in terms of the mean surface roughness and major pixel density. The deposition rate increased from 271 Å/min to 308 Å/min, increasing the bias power and correlation with the ion energy. Particularly, the refractive index increased with a decrease in the bias power. This is a unique feature resulting from the room-temperature deposition of silicon nitride film controlled in terms of the bias power. Moreover, the large variation from 1.94 to 2.49 facilitates the control of the refractive index as a function of the bias power. Strong dependency of the refractive index on the ion energy flux was also identified.

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Low-Hydrogen-Content Silicon Nitride Deposited at Room Temperature by Inductively Coupled Plasma Deposition

Cited by 49 publications

References 12 publications

Final capping passivation layers for long-life microsensors in real fluids

Final capping passivation layers for long-life microsensors in real fluids

Nanoribbon‐Based Flexible High‐Performance Transistors Fabricated at Room Temperature

Radio frequency bias power effects on silicon nitride film deposited in SiH4-NH3 using a plasma-enhanced chemical vapor deposition

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