Low-<i>k</i>films modification under EUV and VUV radiation

Рахимова, Т. В.; Rakhimov, A. T.; Mankelevich, Yu. A.; Lopaev, Dmitry; Kovalev, A. S.; Vasil'eva, A. N.; Zyryanov, Sergey; Kurchikov, K A; Proshina, O. V.; Voloshin, Dmitry; Новикова, Н. Н.; Krishtab, Mikhail; Baklanov, Mikhaı̈l R.

doi:10.1088/0022-3727/47/2/025102

Cited by 51 publications

(98 citation statements)

References 36 publications

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“…40 The damaging effect of the VUV light (k < 200 nm) on the organic component of the hybrid low-k and specifically on the methyl groups is well-known. 22,29 While our results conform to the previous reports, we observe about twice more significant effect on the ethylene as compared with the methylene groups (Figs. 2(a) and 2(c)).…”

supporting

confidence: 92%

“…For example, the typical fluorocarbon-based plasmas used for low-k etching emit photons in the wavelength range 100-350 nm 21 and the extent of their impact correlates with the penetration depth. 22 Therefore, it is of paramount importance to quantify the contribution of the UV light to the PID. [23][24][25] There are numerous studies reporting the effect of UV on CDO films 18,19,22 but it has not been investigated in detail for alkylene-bridged films.…”

mentioning

confidence: 99%

“…22 Therefore, it is of paramount importance to quantify the contribution of the UV light to the PID. [23][24][25] There are numerous studies reporting the effect of UV on CDO films 18,19,22 but it has not been investigated in detail for alkylene-bridged films. 26,27 In the present study, we have utilized Fourier-transform infra-red (FTIR) spectroscopy to investigate the stability of ethylene and methylene bridging groups during UV (KrCl* excimer, 222 6 1.…”

mentioning

confidence: 99%

“…Rakhimova et al 22 reported an increase of the quantum yield for breaking Si-CH 3 bonds by VUV photons for films with $50% porosity compared with films with 45% porosity. The latter suggests that the differences we have discussed so far might be due to the porosity difference between a 55% porous EtLK with respect to 45% porous MeLK.…”

mentioning

confidence: 99%

See 3 more Smart Citations

Effect of the C-bridge length on the ultraviolet-resistance of oxycarbosilane low-k films

Redzheb

Prager

Naumov

et al. 2016

Applied Physics Letters

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supporting

confidence: 92%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Effect of the C-bridge length on the ultraviolet-resistance of oxycarbosilane low-k films

Redzheb

Prager

Naumov

et al. 2016

Applied Physics Letters

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“…In both radical irradiation and neutral beam/radical irradiation cases without photons, no damage was observed while the irradiations with photons created damage. The effect of VUV and extreme ultraviolet (EUV) photons on low-k film modification was systematically studied by Rakhimova et al 39 The wavelengths studied were 13.5 nm (EUV) and 58.4 nm, 106 nm, 147 nm and 193 nm (VUV). Figure 5 shows that the most severe damage over the whole film thickness occurs after exposure with 147 nm light since this emission has the smaller photoabsorption cross section and enables deep penetration into low-k films.…”

Section: Reliability After Integrationmentioning

confidence: 99%

Electrical Reliability Challenges of Advanced Low-k Dielectrics

Baklanov

et al. 2014

ECS J. Solid State Sci. Technol.

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We review the latest studies that address the fundamental understanding of low-k dielectric electrical properties and reliability. We focus on the results discussing the nature of process induced defects, leakage currents and breakdown behavior, as they are important factors to reveal material modification and damage. Issues related to the use of porogen based PECVD techniques during dielectric deposition are discussed, where we focus on the selection of matrix and porogen precursors and on the improvements related to post-deposition treatments. During damascene integration, low-k dielectrics are subjected to several processes that induce material damage, where we review recent learning about plasma exposure, barrier deposition and chemical mechanical polishing. In order to have a successful implementation of advanced ultralow-k films in back-end-of-line interconnects, we argue that more research efforts are needed with respect to its material development, integration and reliability and make some proposals for future work. The development and integration of reliable low-k materials is a key challenge for next generation interconnect technologies. Driven by the requirement of performance increase, highly porous low-k dielectrics are incorporated in deeply scaled back-end-of-line (BEOL) interconnects. In general, there are three important concerns during the study of low-k dielectric electrical properties and reliability: a) the k-value of the dielectric after integration should maintain relatively unchanged, b) the leakage current of the dielectric between metal lines should be low, and c) the time dependent dielectric breakdown (TDDB) failure time of the integrated BEOL structure at operating conditions should meet its specifications. 1Porous SiOCH low-k dielectrics deposited by plasma enhanced chemical vapor deposition (PECVD) techniques are the dominant choice for k>2.2 film depositions and are also potential candidates for ultralow-k (k<2.2) dielectric applications.2 In the past years, significant efforts have been spent to understand their material properties and integration challenges. The bond structures of low-k dielectrics is complex due to the non-equilibrium nature of the PECVD technique.

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Photoabsorption and damage of OSG low‐k films by VUV emission at 140–160 nm

Lopaev

Rakhlinsky

Zyryanov

et al. 2017

Plasma Processes & Polymers

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Vacuum Ultraviolet (VUV) absorption and damage of porous OSG low‐k dielectrics in the wavelength range 140–160 nm was measured. The measurements were done for two OSG films with different porosity. VUV absorption by OSG dielectrics very slowly decreases with increasing wavelength compared to SiO2 which absorption sharply drops reaching the absorption edge. As the analysis has shown the absorption cross‐sections reduced to the Si atom density of these films are very close that indicates the same mechanisms of absorption and damage. The possible absorption and damage mechanisms are briefly discussed.

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Low-kfilms modification under EUV and VUV radiation

Cited by 51 publications

References 36 publications

Effect of the C-bridge length on the ultraviolet-resistance of oxycarbosilane low-k films

Effect of the C-bridge length on the ultraviolet-resistance of oxycarbosilane low-k films

Electrical Reliability Challenges of Advanced Low-k Dielectrics

Photoabsorption and damage of OSG low‐k films by VUV emission at 140–160 nm

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