Low insertion loss and high linearity PHEMT SPDT and SP3T switch ICs for WLAN 802.11 a/b/g applications

Gu, Zeji; Johnson, David A.; Belletete, S.; Fryklund, D.

doi:10.1109/rfic.2004.1320667

Cited by 16 publications

(4 citation statements)

References 5 publications

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“…Their linearity also has been improved allowing them to operate at higher power levels. However, the high power territory is still dominated by the PIN diode switches [8] .…”

Section: Circuit Designmentioning

confidence: 99%

Wideband SPDT Switch With TTL Control

Wang

Liu

2014

AMM

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this paper mainly introduces a wideband SPDT switch with TTL control. Firstly, everypossible configuration is contrasted, the theories of basic GaAs switch configurations arementioned. Secondly, the theories of basic GaAs switch configurations are mentioned.Subsequently, appropriate topology is selected for this SPDT switch. This switch has been realizedby 0.5µm GaAs pHEMT process. this switch exhibits high performance: over DC~4GHz, insertionloss is lower than 1dB; The isolation is lower than 50dB; the ripple variation of insertion loss is lessthan ±0.15dB; input return loss is lower than 14dB; on state, output return loss is lower than 16dB;off state, over 0.2GHz-4GHz, output return loss is lower than 12dB; on and off time are less than55ns. The layout of the switch with a chip size is 0.81 mm×1.22mm.

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“…Their linearity also has been improved allowing them to operate at higher power levels. However, the high power territory is still dominated by the PIN diode switches [8] .…”

Section: Circuit Designmentioning

confidence: 99%

Wideband SPDT Switch With TTL Control

Wang

Liu

2014

AMM

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“…High-quality antenna switches are key building blocks for these transceivers, to establish multiple paths and meet the demands of multiple frequency bands and a wide array of specifications such as insertion loss (IL), isolation (ISO), power handling capacity, and linearity in MB, MS, and MM mobile applications [4], both for transmitter (Tx) and receiver (Rx) paths.  The conventional approach to high-power switch design is mostly based on gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) [5,6,7,8], silicon-on sapphire (SOS) [9], and silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technologies [10,11,12]. However, both GaAs and SOS technologies need expensive substrate and extra CMOS-based digital circuits.…”

Section: Introductionmentioning

confidence: 99%

A high-linearity SP5T SOI switch with a resistive biasing network and capacitance & resistor compensation technology

Zhang,

Ma,

et al. 2024

IEICE Electron. Express

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This letter presents a high-linearity single-pole five-throw switch implemented in a 0.13-μm silicon-on-insulator (SOI) CMOS process. In order to improve the linearity of switch, the uniform voltage division across the stacked-FETs is obtained by the proposed structure, which employs a resistive biasing network as well as compensation technology of drain-to-source capacitance and DC balance resistor. The measured input 0.1 dB compression point of the proposed switch is 42 dBm. Insertion losses are 0.38 dB and 0.5 dB for TX and RX modes at 0.9 GHz. The switch exhibits a second harmonic of -91 dBc, and third harmonic power of -84 dBc with a +28 dBm input power at 0.9 GHz.

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“…Radio-frequency (RF) radiation is widely used in radar, communications, and microwave measurements [1]- [2]. RF switches are among the important components of microwave control circuits, and a variety of specifications and forms of packaging of PIN diodes suitable for use as such switches are available.…”

Section: Introductionmentioning

confidence: 99%

Phase Variation Measurement in Mach–Zehnder Interferometric Switch

Fan

Ruan

Liu

et al. 2021

Measurement Science Review

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Phase variations of the interrogation field lead to frequency shifts in Ramsey-type atomic clocks. This paper reports the development of a 300 MHz Mach–Zehnder (MZ) switch that effectively suppresses phase-transient effects. Similar to MZ interferometers, this radio-frequency (RF) MZ switch comprises two arms that are power- and phase-matched with each other. By inserting a PIN diode RF switch in one arm, the other arm remains undisturbed, freeing it of the phase transient. Trigger phase fluctuation measurements are implemented by using a lock-in amplifier to extract the in-phase and quadrature (I/Q) demodulation data. The results show that the extinction ratio of the RF MZ switch phase fluctuations is <5 μrad, which is significantly lower than that of a PIN (50 μrad). When applied to a cesium fountain clock, the RF MZ switch produces a frequency shift better than 1.73 × 10−16.

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Low insertion loss and high linearity PHEMT SPDT and SP3T switch ICs for WLAN 802.11 a/b/g applications

Cited by 16 publications

References 5 publications

Wideband SPDT Switch With TTL Control

Wideband SPDT Switch With TTL Control

A high-linearity SP5T SOI switch with a resistive biasing network and capacitance & resistor compensation technology

Phase Variation Measurement in Mach–Zehnder Interferometric Switch

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