a novel configuration for a novel ultra wideband switch is presented in this paper. This switch using 0.5um GaAs process in ADS2008 simulator. Switch should be designed to trade-off insertion loss, isolation, bandwidth, and return loss. The aims of design are to provide low insertion loss along with high isolation. The design using integration inductor and resistor in parallel, and this switch exhibits high performance: over DC-10.6GHz, insertion loss is lower than-1.624dB; the ripple variation of insertion loss is less than ±0.25dB; The isolation is lower than-51.336dB; input return loss is lower than-16.402dB; on state, output return loss is lower than-15.919dB; off state, output return loss is lower than-18.294dB; on and off time are less than 4ns.

A novel configuration for a novel temperature compensated amplifier is presented in this paper. This amplifier exhibits high performance including Return Loss is well blew-12dB from DC to 6GHz, At 3.1GHz, the typical gain is 14.1dB, noise figure is 3.0dB, 1dB compression point is 13.9dBm.with insensitivity to temperature.

this paper mainly introduces a wideband SPDT switch with TTL control. Firstly, everypossible configuration is contrasted, the theories of basic GaAs switch configurations arementioned. Secondly, the theories of basic GaAs switch configurations are mentioned.Subsequently, appropriate topology is selected for this SPDT switch. This switch has been realizedby 0.5µm GaAs pHEMT process. this switch exhibits high performance: over DC~4GHz, insertionloss is lower than 1dB; The isolation is lower than 50dB; the ripple variation of insertion loss is lessthan ±0.15dB; input return loss is lower than 14dB; on state, output return loss is lower than 16dB;off state, over 0.2GHz-4GHz, output return loss is lower than 12dB; on and off time are less than55ns. The layout of the switch with a chip size is 0.81 mm×1.22mm.

this paper mainly introduces a GaAs MMIC Wideband SP8T Switch. Firstly, every possible configuration is contrasted, the theories of basic GaAs switch configurations are mentioned. Secondly, the theories of basic GaAs switch configurations are mentioned. Subsequently, appropriate topology is selected for this SP8T switch. This switch has been realized by 0.5µm GaAs pHEMT process. this switch exhibits high performance: over DC~2.5GHz, insertion loss is lower than 1.27dB; The isolation is lower than 30dB; the ripple variation of insertion loss is less than ±0.1dB; input return loss is lower than 22dB; on state, output return loss is lower than 18dB; off state, over 0.2GHz-2.5GHz, output return loss is lower than 10dB; on and off time are less than 75ns. The layout of the switch with a chip size is 1.11 mm×1.51mm.