Low interface trap density Al2O3/In0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate

Lin, Yueh Chin; Huang, M. L.; Chen, Chen-Yu; Chen, Meng Ku; Lin, Hung Ta; Tsai, Pang-Yen; Lin, Chia-Hui; Chang, Hui Cheng; Lee, Tze Liang; Lo, Chia Chiung; Jang, S. M.; Diaz, C.H.; Hwang, H. Y.; Sun, Y.; Chang, Edward Yi

doi:10.7567/apex.7.041202

Cited by 21 publications

(9 citation statements)

References 22 publications

(22 reference statements)

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“…The results herein suggest that the defect states generated by diffusion are fatal for operation of a MOS capacitor owing to the narrow bandgap of InSb, 0.17 eV. In the case of a narrow bandgap, the operation of a MOS device can be more severely affected by the defect states within the bandgap, compared with the other III–V compound semiconductor materials that have wide bandgaps of >0.5 eV 25–29 . Therefore, it is important to control the diffusion of elemental In, which generates the defect states in the InSb system.…”

Section: Discussionmentioning

confidence: 83%

Electrical properties and thermal stability in stack structure of HfO2/Al2O3/InSb by atomic layer deposition

Baik

Kang

et al. 2017

Sci Rep

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Changes in the electrical properties and thermal stability of HfO2 grown on Al2O3-passivated InSb by atomic layer deposition (ALD) were investigated. The deposited HfO2 on InSb at a temperature of 200 °C was in an amorphous phase with low interfacial defect states. During post-deposition annealing (PDA) at 400 °C, In–Sb bonding was dissociated and diffusion through HfO2 occurred. The diffusion of indium atoms from the InSb substrate into the HfO2 increased during PDA at 400 °C. Most of the diffused atoms reacted with oxygen in the overall HfO2 layer, which degraded the capacitance equivalent thickness (CET). However, since a 1-nm-thick Al2O3 passivation layer on the InSb substrate effectively reduced the diffusion of indium atoms, we could significantly improve the thermal stability of the capacitor. In addition, we could dramatically reduce the gate leakage current by the Al2O3 passivation layer. Even if the border traps measured by C–V data were slightly larger than those of the as-grown sample without the passivation layer, the interface trap density was reduced by the Al2O3 passivation layer. As a result, the passivation layer effectively improved the thermal stability of the capacitor and reduced the interface trap density, compared with the sample without the passivation layer.

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Section: Discussionmentioning

confidence: 83%

Electrical properties and thermal stability in stack structure of HfO2/Al2O3/InSb by atomic layer deposition

Baik

Kang

et al. 2017

Sci Rep

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“…83 As it was stated in equation (I.2), a higher mobility would increase the drain current. For p-MOSFETs the main channel candidate is Ge, 84,85 while for n-MOSFETs, there is still a debate on the material of choice, like GaAs, 86,87 In x Ga 1−x As 88 or InP. [89][90][91] For these semiconductors the challenge is to obtain well behaved high κ/III-V semiconductor interfaces with a low D it to prevent Fermi level pinning.…”

Section: I5-alternative Substratesmentioning

confidence: 99%

Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets

Arce

2017

Springer Theses

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A mis padres i AGRADECIMIENTOS / ACKNOWLEGDMENTSEn primer lugar, me gustaría agradecer a mi director de tesis, Prof. Enrique San Andrés Serrano, la oportunidad que me ha brindado permitiéndome realizar este trabajo durante estos años. Gracias por todo su esfuerzo, dedicación, confianza y por todas sus enseñanzas. Su labor ha sido mucho más que la de un director. Muchísimas gracias por todo.Querría también agradecer a todos los miembros del grupo de Láminas delgadas y microelectrónica por aceptarme desde el primer momento como una más. Gracias al Prof. Germán González Díaz, al Prof. Ignacio Mártil de la Plaza, a la Profa. María Luisa Lucía Mulas, a la Profa. Margarita Sánchez Balmaseda y al Prof. Álvaro del Prado Millán. Gracias a la Dra. María Toledano Luque, al Dr. David Pastor Pastor, al Dr.Javier Olea Ariza, al Dr. Eric García Hemme, a D. Rodrigo García Hernansanz y a D. Daniel Montero Álvarez. Unas gracias especiales al Dr. Pedro Carlos Feijoo Guerro por ayudarme desde el primer momento y por su simpatía. Gracias a todos por sus enseñanzas, por las charlas, por su dedicación, por su disposición siempre, por su generosidad y por las risas. He sido tremendamente afortunada de haber podido realizar mi tesis con todos ellos. Gracias por enseñarme tanto.Gracias a los miembros del departamento de Física Aplicada III por el buen ambiente. Gracias en especial a Dña. Mar Gálvez Díez por toda su ayuda administrativa y por su buena energía por las mañanas. Salvador Dueñas Carazo y al Prof. Héctor García García por las medidas eléctricas y la ayuda en la compresión del análisis de los resultados.Thank you very much to all the people of the PGI-9 at Forschungszentrum Jülich to accept me during six months. It was a real pleasure to be with you those months, learning and sharing talks. I will never forget those lunches at 11:00 am. Mahlzeit! Vielen Dank! No puedo olvidarme tampoco de mi "familia española" durante mi estancia en Jülih. Hicistéis que esos meses lejos de casa fueran especiales e inolvidables. ¡Gracias! Quisiera agradecer de manera muy especial a mi familia: mis padres, Maique y Fernando, por permitirme hacer lo que he querido siempre y por todo su apoyo. Sin duda, no hubiera llegado a esto sin ellos. También a mis hermanos, Fernando y Joaquín, a mi cuñada Almudena y al pequeño de la familia (por el momento), Yago. Son la familia que me ha tocado, pero me siento muy afortunada por ello.Por último, gracias a todos mis amigos, por ser la familia que se puede elegir. Y gracias a esas personas que se han ido cruzando en mi camino, porque de una manera u otra, habéis hecho que sea también la persona que soy y que haya llegado hasta aquí.Y gracias también a todas esas personas que están por llegar... Marián Pampillón Arce iii TABLE OF CONTENTSAgradecimientos LIST OF TABLES

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“…However, the intrinsic strain of the In 0.53 Ga 0.47 As film arises due to the large lattice mismatch (~8.05%) between the In 0.53 Ga 0.47 As film and the Si substrate. Overcoming this large lattice mismatches is the key issue for the growth of high crystalline quality In 0.53 Ga 0.47 As layer on Si substrate [2]. If In 0.53 Ga 0.47 As film is directly grown on Si substrate, a high density of defects will be generated, ultimately resulting in a worsened device performance.…”

Section: Introductionmentioning

confidence: 99%

“…The epitaxy of In x Ga 1 − x As films has attracted enormous attention because it is promising to integrate III-V compounds based electronic components and optoelectronic devices [1][2][3][4][5]. And the heteroepitaxial growth of In x Ga 1 − x As films on Si substrates are expected to be used for the fabrication of high-efficiency solar cells [6,7], laser diodes [8,9], photodetectors [10,11], and so on.…”

Section: Introductionmentioning

confidence: 99%

Structural properties of In0.53Ga0.47As epitaxial films grown on Si (111) substrates by molecular beam epitaxy

et al. 2015

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Low interface trap density Al₂O₃/In_0.53Ga_0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate

Cited by 21 publications

References 22 publications

Electrical properties and thermal stability in stack structure of HfO2/Al2O3/InSb by atomic layer deposition

Electrical properties and thermal stability in stack structure of HfO2/Al2O3/InSb by atomic layer deposition

Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets

Structural properties of In0.53Ga0.47As epitaxial films grown on Si (111) substrates by molecular beam epitaxy

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