Low-k silicon nitride film for copper interconnects process prepared by catalytic chemical vapor deposition method at low temperature

Deposition and characterization of low temperature silicon nitride films deposited by inductively coupled plasma CVD

“…Nevertheless, the thermal budget for the conventional PECVD techniques is still too high for many emerging applications [4][5][6][7][8][9]. Alternative low temperature processes such as, pulsed laser deposition (PLD) [10] and catalytic chemical vapor deposition (Cat-CVD) [11,12] are utilized for deposition of SiN at 150 • C. A number of novel plasma deposition techniques are developed to obtain high quality SiN films at low temperatures with decreased surface damage and controlled film stress. High-density plasma (HDP) based technology such as; electron cyclotron resonance plasma CVD (ECR-CVD) and inductively coupled plasma CVD (ICP-CVD) are the most effective for deposition at low temperature without compensating with the film quality.…”

Final capping passivation layers for long-life microsensors in real fluids

“…By conventional plasma-enhanced chemical vapour deposition (PECVD) [9,10,14,[24][25][26][27][28][29][30][31][32][33], this temperature could be decrease down to 250-400°C but not below 200°C without important impact on film quality. Pulsed laser deposition [50] and catalytic CVD [51][52] are low temperature alternative processes (150°C). Recently, major interest has been placed on the development of novel PECVD techniques for the deposition of high-density SiNx films at low temperature with reduced surface damages and controlled residual stress.…”

Dissociative ionization and electron beam induced deposition of tetrakis(dimethylamino)silane, a precursor for silicon nitride deposition

“…Silicon nitride (SiN x ) thin films are dielectric materials that play an important role in the semiconductor industry. By varying the silicon/nitrogen composition or deposition methods, such films can serve as passivation layers in device packaging, 1,2 insulators of interconnects in Back End of Line (BEOL), 3 gate spacers for high mobility channel transistor fabrication 4 and more. 5 Silicon oxynitrides (SiO x N y ) are also essential materials in the semiconductor industry 6 as a dielectric layer and for integrated optics and waveguides.…”