Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon

Thompson, Michael D.; Alhodaib, Aiyeshah; Craig, Adam; Robson, Alexander; Aziz, Atif; Krier, A.; Svensson, Johannes; Wernersson, Lars‐Erik; Sanchez, Ana M.; Marshall, Andrew

doi:10.1021/acs.nanolett.5b03449

Cited by 71 publications

(113 citation statements)

References 27 publications

(44 reference statements)

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“…In particular, self-catalyzed vapor-liquid-solid (VLS) NW growth [2,3] enables direct epitaxial integration of high quality III-V semiconductor materials on Si substrates without the use of foreign metal catalysts such as Au, which may form unwanted defect states [4]. Exploitation of NWs in LEDs [5,6], solar cells [7,8], photodetectors [9], and other optoelectronic devices requires a controllable methodology for doping. Consequently, significant efforts have been put into the investigation of the NW doping process [10].…”

Section: Introductionmentioning

confidence: 99%

Te incorporation and activation as n -type dopant in self-catalyzed GaAs nanowires

Hakkarainen

Piton

Fiordaliso

et al. 2019

Phys. Rev. Materials

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Dopant atoms can be incorporated into nanowires either via the vapor-liquid-solid mechanism through the catalyst droplet or by the vapor-solid growth on the sidewalls. Si is a typical n-type dopant for GaAs, but in nanowires it often suffers from a strongly amphoteric nature in the vapor-liquid-solid process. This issue can be avoided by using Te, which is a promising but less common alternative for n-type doping of GaAs nanowires. Here, we present a detailed investigation of Te-doped self-catalyzed GaAs nanowires. We use several complementary experimental techniques, such as atom probe tomography, off-axis electron holography, micro-Raman spectroscopy, and single-nanowire transport characterization, to assess the Te concentration, the free-electron concentration, and the built-in potential in Te-doped GaAs nanowires. By combing the experimental results with a theoretical model, we show that Te atoms are mainly incorporated by the vapor-liquid-solid process through the Ga droplet, which leads to both axial and radial dopant gradients due to Te diffusion inside the nanowires and competition between axial elongation and radial growth of nanowires. Furthermore, by comparing the free-electron concentration from Raman spectroscopy and the Te-atom concentrations from atom probe tomography, we show that the activation of Te donor atoms is 100% at a doping level of 4 × 10 18 cm −3 , which is a significant result in terms of future device applications.

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Section: Introductionmentioning

confidence: 99%

Te incorporation and activation as n -type dopant in self-catalyzed GaAs nanowires

Hakkarainen

Piton

Fiordaliso

et al. 2019

Phys. Rev. Materials

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“…Instead using contact barriers, directly integrating rectifying junctions in nanowires offer an ideal solution to improve the on‐off ratio in III–V nanowire based photodetectors. From such perspective, researchers have been attempting to fabricate dopant‐gradient nanowires . Figure a displays the structure of a photodetector based on InAs 1‐x Sb x nanowire array (Figure b), with the nanowires built directly with axial p‐i‐n junctions.…”

Section: Nanostructured Infrared Sensitive Materials For Photodetectorsmentioning

confidence: 99%

Section: Nanostructured Infrared Sensitive Materials For Photodetectorsmentioning

confidence: 99%

“…The photodetectors assembled with hybrid PbS quantum dots and 2D graphene have reached the ultrahigh detectivity of over 7 × 10 13 Jones with exceedingly high photocarrier gain (>10 8 ) in the SWIR band . P‐n or Schottky junctions integrated in InSbAs, GaAsSb nanowires, graphene and some hybrid materials have been recently developed for photodetection . They have displayed greatly suppressed dark current in photodetectors and showed the great prospects in building room temperature photodetectors in the MWIR and LWIR band.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Nanostructured Materials and Architectures for Advanced Infrared Photodetection

Zhuge

Zheng

Luo

et al. 2017

Adv Materials Technologies

103

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Infrared photodetectors are finding widespread applications in telecommunication, motion detection, chemical sensing, thermal imaging and bio‐medical imaging, etc. The nanostructured materials and architectures are attracting extensive interests in photodetectors in view of the potential benefits from confined light‐matter interaction, fast carrier dynamics and ultrahigh photoconductive gains. This review concentrates on the photodetection in the infrared spectrum and recent progresses in constructing advanced infrared photodetectors based on quantum wells, dots, and the rapidly evolving 1D and 2D materials are summarized. The recent achievements in exploring nanostructured plasmonic metamaterials for the intriguing subwavelength photon confinement and waveguides in devices are also surveyed considering their importance in device integration. An outlook of infrared photodetection is given in the end as a guideline for this vigorous field.

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“…However, InAs surface is well known to suffer from a very high level of electron states resulting which is the source of high surface leakage currents facing in InAs bulk photodiodes. 3,4 InAs NWs are more susceptible to detrimental surface states 5 A cm −2 at −0.1 V at room temperature, which is promising for integration of low noise III-V photodiodes with other nanophotonic building blocks on Si-based circuits.…”

Section: Introductionmentioning

confidence: 99%