2006
DOI: 10.1063/1.2364269
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Low leakage p-NiO∕i-ZnO∕n-ITO heterostructure ultraviolet sensor

Abstract: Enhancement of near-band-edge photoluminescence of ZnO thin films in sandwich configuration at room temperature

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Cited by 54 publications
(37 citation statements)
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“…As shown in Fig. 7(a), the p-n heterojunction exhibits a steadily rectifying behavior with a threshold voltage of 1.5 V, which can be comparable with literature reports [2,19]. The rectification ratio of the forward to reverse bias current is about 127 at a bias voltage of AE1 V, as shown in Fig.…”
Section: Resultssupporting
confidence: 88%
“…As shown in Fig. 7(a), the p-n heterojunction exhibits a steadily rectifying behavior with a threshold voltage of 1.5 V, which can be comparable with literature reports [2,19]. The rectification ratio of the forward to reverse bias current is about 127 at a bias voltage of AE1 V, as shown in Fig.…”
Section: Resultssupporting
confidence: 88%
“…The hysteretic current-voltage (I-V) characteristics with self-rectifying effect are both found in the two cases. It confirms that the self-rectifying effect should be ascribed to the interface of n-ZnO/p-NiO, which is in agreement with the presence of p-n junction at the interface between n-ZnO and p-NiO in previous reports [19][20][21][22][23][24]. In the Au/ZnO/NiO/ ITO junction, it is difficult to distinguish high resistance state (HRS) and low resistance state (LRS) at positive bias.…”
Section: Resultssupporting
confidence: 90%
“…For example, the conductive filaments of ZnO and NiO are considered to be related to oxygen vacancies or metal ions [15][16][17][18]. Actually, n-ZnO/ p-NiO junction has attracted much attention for the applications in the fields of light-emitted diode, ultraviolet detector, photocatalyst, photovoltaic cell, and piezoelectric nanogenerator over the past 20 years [19][20][21][22][23][24]. Both ZnO and NiO have been individually studied in resistive switching devices.…”
Section: Introductionmentioning
confidence: 99%
“…In this work, we used low temperature, low cost solution-based growth methods for both p-type NiO film and n-type ZnO nanorods. Although NiO is a transparent p-type semiconductor and NiO / ZnO heterojunctions for photodetector applications exhibited clear rectifying properties, 8,9 no LEDs with p-NiO / n-ZnO heterojunctions have been reported. Also, while NiO can also be fabricated by a simple electrochemical deposition on a conductive substrate, 10 this method is rarely used for fabrication of devices.…”
mentioning
confidence: 99%