Low Leakage Zero Ground Bounce Noise Nanoscale Full Adder Using Source Biasing Technique

Goyal, Candy; Ubhi, Jagpal Singh; Raj, Balwinder

doi:10.1166/jno.2019.2504

Cited by 11 publications

(1 citation statement)

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“…This dip is due to the formation of a more substantial depletion layer, resulting in a more significant reduction in the electric potential energy in that region. [19][20][21][22][23] The transconductance vs. gate voltage graph of a GaN GAA nanowire-based FET shows the relationship between the device's transconductance (g m ) and the gate voltage (V g ) at different values of the source-drain voltage (V ds ) with V ds = constant. The transconductance is the ratio of the change in the drain current (I d ) to the change in the gate voltage (V g ), and it represents the device's amplification capability.…”

Section: Simulations and Resultsmentioning

confidence: 99%

Drain Current and Transconductance Analysis of GaN GAA Nanowire FET with High K Dielectric

Singh,

Chaudhary,

Raj

2023

ECS J. Solid State Sci. Technol.

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This paper presents the GaN GAA nanowire FET analysis with high K dielectric. The new phase in the development of power semiconductor devices has begun with the introduction of the outstanding benefits of employing wide bandgap semiconductors like gallium nitride (GaN) in the development of sophisticated devices. This work has been carried out to evaluate drain current, electric field, electric potential, and transconductance with SiO2 and HfO2 as dielectric. There are several advantages of switching from silicon-based circuits to GaN-based ones The drain current analysis shows that the device with HfO2 gate dielectric has a higher ON/OFF ratio compared to the device with SiO2 gate dielectric. The transconductance analysis also shows that the device with HfO2 gate dielectric has a higher transconductance value of approximately 9.88 S compared to the device with SiO2 gate dielectric.

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