Low-Light-Level InGaAs focal plane arrays with and without illumination

MacDougal, M.H.; Geske, J.; Wang, Chad; Follman, David

doi:10.1117/12.852605

Cited by 13 publications

(8 citation statements)

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“…As a result, around 50 and 2.5 times improvement has been shown in the dark current density level compared to the conventional pn junction and recently proposed all InGaAs nBn type photodetector, respectively. The same carrier lifetime and surface recombination velocity values have been used for all structures in the comparison in Figure 8 and the calculated dark current density for the proposed structure is getting closer to the record values reported for planar type detectors [44,45]. Considering the effects of lattice-mismatch on the carrier lifetime, the improvement for the all lattice-matched case compared to the lattice-mismatched case would be even stronger.…”

Section: Resultssupporting

confidence: 68%

InGaAs nBn SWIR detector design with lattice-matched InAlGaAs barrier

Uzgur¹,

Kocaman²

2019

Turk J Elec Eng & Comp Sci

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Dark current optimization with band gap engineering has been numerically studied for InGaAs nBn type infrared photodetectors. Undoped InAlGaAs grading layers are utilized in constructing the barrier and dipole deltadoped layers are placed in both sides of the graded layers for eliminating valence band offset. As a result, the high band gap barrier layer blocks the majority carriers and allows minority carrier flow while minimizing various dark current components, as expected from an nBn detector. Substantial improvement has been shown in the dark current level without compromising any photoresponse compared to the conventional pn junction and recently proposed all InGaAs nBn type photodetectors.

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Section: Resultssupporting

confidence: 68%

InGaAs nBn SWIR detector design with lattice-matched InAlGaAs barrier

Uzgur¹,

Kocaman²

2019

Turk J Elec Eng & Comp Sci

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“…A low dark current InGaAs array has been developed, for low light level applications. 370 A Raman spectrometer from BioTools, targeted at biological samples, uses 532 nm as the exciting line, 371 and a product line of commercial transportable laboratory instruments incorporates dual wavelength excitation (532 nm/785 nm; 532 nm and 1064 nm; 785 nm and 1064 nm). 372 A prototype handheld instrument incorporating both 785 nm and 1064 nm excitation has been described, 373 which commented that 785 nm excitation provided a factor of 40 better S/N ratio than 1064 nm, of which a factor of 3.4 was ascribable to the well-known n 4 scattering efficiency, with the rest due to the detector and spectrograph.…”

Section: Raman Spectrometer Technologies and Applicationsmentioning

confidence: 99%

Portable Spectroscopy

Crocombe¹

2018

Appl Spectrosc

403

233

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Until very recently, handheld spectrometers were the domain of major analytical and security instrument companies, with turnkey analyzers using spectroscopic techniques from X-ray fluorescence (XRF) for elemental analysis (metals), to Raman, mid-infrared, and near-infrared (NIR) for molecular analysis (mostly organics). However, the past few years have seen rapid changes in this landscape with the introduction of handheld laser-induced breakdown spectroscopy (LIBS), smartphone spectroscopy focusing on medical diagnostics for low-resource areas, commercial engines that a variety of companies can build up into products, hyphenated or dual technology instruments, low-cost visible-shortwave NIR instruments selling directly to the public, and, most recently, portable hyperspectral imaging instruments. Successful handheld instruments are designed to give answers to non-scientist operators; therefore, their developers have put extensive resources into reliable identification algorithms, spectroscopic libraries or databases, and qualitative and quantitative calibrations. As spectroscopic instruments become smaller and lower cost, ''engines'' have emerged, leading to the possibility of being incorporated in consumer devices and smart appliances, part of the Internet of Things (IOT). This review outlines the technologies used in portable spectroscopy, discusses their applications, both qualitative and quantitative, and how instrument developers and vendors have approached giving actionable answers to non-scientists. It outlines concerns on crowdsourced data, especially for heterogeneous samples, and finally looks towards the future in areas like IOT, emerging technologies for instruments, and portable hyphenated and hyperspectral instruments.

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“…MT12815CA-3G supports snapshot Integrate-Then-Read (ITR) and Integrate-While-Read (IWR) read modes. The CTIA type pixel input circuitry has three full-well-capacity (FWC) values of 10.000 e-, 20.000 e-, and 350.000 e-in the very high gain (VHG), high-gain (HG), and low-gain (LG) modes, respectively. MT12815CA-3G has an input referred noise level of less than 5 e-in the very high gain (VHG) mode at 300K, suitable for very low-noise SWIR imaging applications.…”

Section: Discussionmentioning

confidence: 99%

“…One common property for these FPA types is that they are operated at room temperature, are small in size, have relatively lower cost compared to their cooled alternatives, and therefore have a great potential for high volume commercial and industrial applications. [7][8][9][10][11]. It is relatively easier for the viewers to understand SWIR images as they look similar to the visible images, since both type of images are formed by capturing the reflected light from the ambient rather than the radiated light common for MWIR and LWIR bands.…”

Section: Il Gmentioning

confidence: 97%

A 1280×1024-15μm CTIA ROIC for SWIR FPAs

Eminoglu¹,

Isikhan²,

Bayhan³

et al. 2015

SPIE Proceedings

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This paper reports the development of a new SXGA format low-noise CTIA ROIC (MT12815CA-3G) suitable for mega-pixel SWIR InGaAs detector arrays for low-light imaging applications. MT12815CA-3G is the first mega-pixel standard ROIC product from Mikro-Tasarim, which is a fabless semiconductor company specialized in the development of ROICs and ASICs for visible and infrared hybrid imaging sensors. MT12815CA-3G is a low-noise snapshot mega-pixel CTIA ROIC, has a format of 1280 × 1024 (SXGA) and pixel pitch of 15 µm. MT12815CA-3G has been developed with the system-on-chip architecture in mind, where all the timing and biasing for this ROIC are generated on-chip without requiring any special external inputs. MT12815CA-3G is a highly configurable ROIC with many features that can be programmed through a 3-wire serial interface allowing on-the-fly configuration the ROIC. It performs snapshot operation both using Integrate-Then-Read (ITR) and Integrate-While-Read (IWR) modes. The CTIA type pixel input circuitry has 3 gain modes with programmable full-well-capacity (FWC) values of 10K e-, 20K e-, and 350K e-in the very high gain (VHG), high-gain (HG), and low-gain (LG) modes, respectively. MT12815CA-3G has an input referred noise level of less than 5 e-in the very high gain (VHG) mode, suitable for very low-noise SWIR imaging applications. MT12815CA-3G has 8 analog video outputs that can be programmed in 8, 4, or 2-output modes with a selectable analog reference for pseudo-differential operation. The ROIC runs at 10 MHz and supports frame rate values up to 55 fps in the 8-output mode. The integration time of the ROIC can be programmed up to 1s in steps of 0.1 µs. The ROIC uses 3.3 V and 1.8V supply voltages and dissipates less than 350 mW in the 4-output mode. MT12815CA-3G is fabricated using a modern mixed-signal CMOS process on 200 mm CMOS wafers, and there are 44 ROIC parts per wafer. The probe tests show that the die yield is higher than 70%, which corresponds to more than 30 working ROIC parts per wafer typically. MT12815CA-3G ROIC is available as tested wafers or dies, where a detailed test report and wafer map are provided for each wafer. A compact USB 3.0 based test camera and imaging software are also available for the customers to test and evaluate the imaging performance of SWIR sensors built using MT12815CA-3G ROICs. Mikro-Tasarim has also recently developed a programmable mixed-signal application specific integrated circuit (ASIC), called MTAS1410X8, which is designed to perform ROIC driving and digitization functions for ROICs with analog outputs, such as MT12815CA-3G and MT6415CA ROIC products of Mikro-Tasarim. MTAS1410X8 has 8 simultaneously working 14-bit analog-to-digital converters (ADCs) with integrated programmable gain amplifiers (PGAs), video input buffers, programmable controller, and high-speed digital video interface supporting various formats including Camera Link. MT12815CA-3G ROIC together with MTAS1410X8 ASIC can be used to develop low-noise high-resolution SWIR imaging sensors with low power d...

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Low-Light-Level InGaAs focal plane arrays with and without illumination

Cited by 13 publications

References 0 publications

InGaAs nBn SWIR detector design with lattice-matched InAlGaAs barrier

InGaAs nBn SWIR detector design with lattice-matched InAlGaAs barrier

Portable Spectroscopy

A 1280×1024-15μm CTIA ROIC for SWIR FPAs

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