Low-loss distributed MEMS phase shifter

Borgioli, A.; Liu, Yu; Nagra, A.S.; York, R.A.

doi:10.1109/75.842070

Cited by 82 publications

(40 citation statements)

References 15 publications

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“…By applying a single bias voltage to either the signal conductor of the CPW line or the MEMS bridges lying over this centre conductor, the effective distributed capacitance of the line can be changed, which in turn changes the phase velocity and, thus, the associated propagation delay through the transmission line. Using this principle, Borgioli et al [44] reported a 1-bit ultra-wide bandwidth distributed loadedline. Again, MEMS capacitive membrane switches were employed, with C ON /C OFF B7.5 and having an actuation voltage of 75 V. Here, an 8.6 mm long CPW line on a glass substrate achieved a DC to 35 GHz bandwidth, with a relative phase shift and insertion loss of 2701 and 1.7 dB, respectively, at 35 GHz.…”

Section: Phase Shiftersmentioning

confidence: 99%

Review of radio frequency microelectromechanical systems technology

Lucyszyn

2004

IEE Proceedings - Science, Measurement and Technology

125

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A review of radio frequency microelectromechanical systems (RF MEMS) technology, from the perspective of its enabling technologies (e.g. fabrication, RF micromachined components and actuation mechanisms) is presented. A unique roadmap is given that shows how enabling technologies, RF MEMS components, RF MEMS circuits and RF microsystems packaging are linked together; leading towards enhanced integrated subsystems. An overview of the associated fabrication technologies is given, in order to distinguish between the two distinct classes of RF microsystems' component technologies; non-MEMS micromachined and true MEMS. An extensive literature survey has been undertaken and key papers have been cited; from these, the motivations behind different RF MEMS technologies are highlighted. The importance of understanding the limitations for realising new and innovative ideas in RF MEMS is discussed. Finally, conclusions are drawn as to where future RF MEMS technology may lead. It is likely that the switch will continue to be the most important RF MEMS component, with future work investigating its enhanced functionality, subsystem integration and volume production. The focus of RF MEMS circuits will shift from the digital phase shifter to high-Q tuneable filters.

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Section: Phase Shiftersmentioning

confidence: 99%

Review of radio frequency microelectromechanical systems technology

Lucyszyn

2004

IEE Proceedings - Science, Measurement and Technology

125

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“…In DMTL phase shifters small phase shift can be achieved with high accuracy. Demonstrated DMTL phase shifters on fused silica (McFeetors and Okoniewski 2006), high resistivity silicon (Palei et al 2005;Lakshminarayan and Weller 2002), low resistivity silicon (Wang et al 2008;Guo et al 2006), or ceramic substrates such as quartz (Hayden and Rebeiz 2003Weller 2007, 2006; Rebeiz 2000, 1998;Fangmin et al 2001), Pyrex glass Borgioli et al 2000;Topalli et al 2006), use highly sophisticated and expensive silicon microfabrication process technologies. RF devices have also been demonstrated with several non-conventional processes on microwave laminates with emphasis on the performance improvement in insertion loss at the cost of fabrication complexity (Ramadoss et al 2005).…”

Section: Introductionmentioning

confidence: 98%

A low cost approach for the fabrication of microwave phase shifter on laminates

Goel

Vinoy

2011

Microsyst Technol

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This paper presents a simple and low cost fabrication approach using extended printed circuit board processing techniques for an electrostatically actuated phase shifter on a common microwave laminate. This approach uses 15 lm thin copper foils for realizing the bridge structures as well as for a spacer. A polymeric thin film deposited by spin coating and patterned using lithographic process is used as a dielectric layer to improve the reliability of the device. The prototype of the phase shifter for X-band operation is fabricated and tested for electrical and electromechanical performance parameters. The realized devices have a figure of merit of 70°/dB for a maximum applied bias potential of 85 V. Since these phase shifters can be conveniently fabricated directly on microwave substrates used for feed distribution networks of phased arrays, the overall addition in cost, dimensions and processing for including these phase shifters in these arrays is minimal.

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“…Digital phase shifters with this approach allow large phase shift and low sensitivity to electrical noise. In the published CPW digital phase shifters [4,5], a small metalinsulator-metal (MIM) capacitor or metal-air-metal (MAM) [10,11] in series with the MEMS bridge capacitor was used to reduce the total shunt capacitance seen by the line, resulting in an acceptable return loss for both switching states over a wide band.…”

Section: Introductionmentioning

confidence: 99%

“…However, since there was a limit on the control range of the bridge height before the bridge snaps, the analog phase shifter showed relatively small phase shift. This problem was solved by operating the MEMS bridges in the digital mode [4][5][6][7][8][9][10][11], where two distinct capacitance states (ON and OFF) were defined with a high ratio. Digital phase shifters with this approach allow large phase shift and low sensitivity to electrical noise.…”

Section: Introductionmentioning

confidence: 99%

Small Size Ka-Band Distributed Mems Phase Shifters Using Inductors

Afrang¹,

Majlis²

2008

PIER B

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Abstract-MEMS phase shifter has been developed using inductors. The design consists of a CPW line capacitively and inductively loaded by the periodic set of inductors and electrostatic force actuated MEMS switches as capacitors. By applying a single bias voltage on the line, the characteristic impedance can be changed, which in turn changes the phase velocity of the line and creates a true time delay phase shift. The governing equations for the impedance and loss are derived. The ABCD matrix is defined for a unit cell and multi-cell DMTL phase shifter to extract scattering parameters equations. The MEMS switch is actuated by a 39 voltage waveform using a high resistance bias line. Estimated spring constant and switching time is 22 N/m and 3 µs, respectively. The structure is designed for Ka-band frequency range. The acceptable frequency range for the design containing 21 cells is between 26 GHz and 27 GHz and optimum condition occurs at 26.3 GHz. For the whole structure and optimum condition the un actuated position results in a return loss −16 dB and insertion loss of −1.65 dB. The actuated position results in a return loss −12.5 dB and insertion loss of −1.6 dB. The phase shift for the whole structure is 190 degree. The optimum condition can be easily changed by modifying the design parameters. The spacing in the proposed structures is S = 250 µm. The structure is also low loss. The length and the loss per bit with the phase shift of 270 • are decreased by 37.5 percent and 21 percent respectively.

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Low-loss distributed MEMS phase shifter

Cited by 82 publications

References 15 publications

Review of radio frequency microelectromechanical systems technology

Review of radio frequency microelectromechanical systems technology

A low cost approach for the fabrication of microwave phase shifter on laminates

Small Size Ka-Band Distributed Mems Phase Shifters Using Inductors

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