2013
DOI: 10.1109/tuffc.2013.2783
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Low-loss lateral-extensional piezoelectric filters on ultrananocrystalline diamond

Abstract: In this work, lateral-extensional thin-film piezoelectric- on-diamond (TPoD) filters with very low insertion loss (IL) values (<4 dB) are reported. Two different lateral-extensional modes of a resonant structure are coupled together to realize a two-pole filter. The filters of this work exhibit low IL values, with fractional bandwidth between 0.08% and 0.2%, and have a very small footprint. This paper reports on the lowest IL in the literature for lateral-extensional thin-film piezoelectric filters with 50 Ω t… Show more

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Cited by 6 publications
(5 citation statements)
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References 23 publications
(25 reference statements)
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“…Apart from realizing a piezoelectric resonator with only the piezoelectric film to define the structural layer, some research groups have implemented resonators comprising a thin piezoelectric film on a thick substrate layer. In this case, the structural layer is defined mainly by the substrate material, examples of which include single-crystal silicon [ 59 , 165 , 166 , 167 , 168 ], silicon carbide [ 169 , 170 , 171 ], and diamond [ 172 , 173 ].…”
Section: Fabricationmentioning
confidence: 99%
“…Apart from realizing a piezoelectric resonator with only the piezoelectric film to define the structural layer, some research groups have implemented resonators comprising a thin piezoelectric film on a thick substrate layer. In this case, the structural layer is defined mainly by the substrate material, examples of which include single-crystal silicon [ 59 , 165 , 166 , 167 , 168 ], silicon carbide [ 169 , 170 , 171 ], and diamond [ 172 , 173 ].…”
Section: Fabricationmentioning
confidence: 99%
“…The MEMS used here, schematically shown in Figure 1, is composed of a piezoelectric layer sandwiched between two metal layers stacked on top of a nanocrystalline diamond substrate. AlN with a thickness of 500nm forms the piezoelectric layer and the nanocrystalline substrate has a thickness of 3µ m. Details of the operation of the MEMS device, including the design and fabrication process, can be found in [18,19].…”
Section: Low-loss High-quality-factor Piezoelectric Mems Resonatormentioning
confidence: 99%
“…AlN with a thickness of 500nm forms the piezoelectric layer and the nanocrystalline substrate has a thickness of 3 µm. Details of the operation of the MEMS device, including the design and fabrication process, can be found in [18,19].…”
Section: Low-loss High-quality-factor Piezoelectric Mems Resonatormentioning
confidence: 99%
See 1 more Smart Citation
“…These resonators have been employed to build oscillators [1,2] and high performance filters [3,4]. One less-explored application for such resonators is impedance transformation that could be used in a transceiver architecture where impedance matching between high frequency components such as the front-end filter and the LNA is of interest.…”
Section: Introductionmentioning
confidence: 99%