Low-Loss SOI Photonic Wires and Ring Resonators Fabricated With Deep UV Lithography

Dumon, Pieter; Bogaerts, Wim; Wiaux, Vincent; Wouters, Jan; Beckx, S.; Campenhout, Joris Van; Taillaert, Dirk; Luyssaert, Bert; Bienstman, Peter; Thourhout, Dries Van; Baets, Roel

doi:10.1109/lpt.2004.826025

Cited by 410 publications

(230 citation statements)

References 8 publications

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“…This is driven by the fact that standard complementary metal-oxide semiconductor ͑CMOS͒ technology can be used to fabricate photonic integrated circuits, thereby improving the yield, reproducibility, and cost of the fabrication. 1 While passive optical functions such as wavelength filters 2, 3 and active optical functions such as light modulation 4 can be realized in silicon, light detection, amplification, and emission require other materials to be integrated on the SOI waveguide platform, i.e., III-V ͑Ref. 5͒ or germanium 6 for light detection and III-V material for light emission and amplification.…”

Section: Introductionmentioning

confidence: 99%

Light emission and enhanced nonlinearity in nanophotonic waveguide circuits by III–V/silicon-on-insulator heterogeneous integration

Roelkens

Liu

Thourhout

et al. 2008

Journal of Applied Physics

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The heterogeneous integration of a III-V thin film on top of a silicon-on-insulator ͑SOI͒ optical waveguide circuit by means of adhesive divinylsiloxane-benzocyclobutene ͑DVS-BCB͒ die-to-wafer bonding is demonstrated, thereby achieving light emission and enhanced nonlinearity in ultracompact SOI cavities. This approach requires ultrathin DVS-BCB bonding layers to allow the highly confined optical mode to overlap with the bonded III-V film. The transfer of sub-100-nm III-V layers using a 65 nm DVS-BCB bonding layer onto SOI racetrack resonator structures is demonstrated. Spontaneous emission coupled to a SOI bus waveguide, spectrally centered around the resonator resonances, is observed by optically pumping the III-V layer. Strong carrier-induced nonlinearities are observed in the transmission characteristics of the III-V/SOI resonator structure. The all-optical control of an optical signal in these III-V/SOI resonators is demonstrated.

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Section: Introductionmentioning

confidence: 99%

Light emission and enhanced nonlinearity in nanophotonic waveguide circuits by III–V/silicon-on-insulator heterogeneous integration

Roelkens

Liu

Thourhout

et al. 2008

Journal of Applied Physics

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“…A 200 nm gap separates both microrings from a Si strip waveguide (220×440 nm 2 ) with grating couplers 23 at both ends, which are used to deliver light into the device and monitor the transmitted spectrum using single-mode fibers (SMF). The microrings, waveguides and grating couplers were fabricated on top of a silicon-on-insulator (SOI) substrate with 2 µm of buried oxide using 248 nm deep UV lithography, following a previously developed method 24 . In order to control the overlap of the mode propagating inside the microring with the GST, a thin buffer layer (50 nm) of SiO 2 was deposited on top of the Si waveguide using plasma-enhanced chemical vapor deposition (PECVD).…”

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confidence: 99%

Optical switching at 1.55 μm in silicon racetrack resonators using phase change materials

Rudé¹,

Pello²,

Simpson³

et al. 2013

Applied Physics Letters

206

136

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A novel optical switch operating at a wavelength of 1.55 µm and showing a 12 dB modulation depth is introduced. The device is implemented in a silicon microring resonator using an overcladding layer of the phase change data storage material Ge 2 Sb 2 Te 5 (GST), which exhibits high contrast in its optical properties upon transitions between its crystalline and amorphous structural phases. These transitions are triggered using a pulsed laser diode at λ = 975 nm and used to tune the resonant frequency of the microring resonator and the resultant modulation depth of the 1.55 µm transmitted light.The ever-increasing demand for high speed optical communication networks is driving the development of new photonic devices that can process optical signals in a reliable, low-cost manner. Among competing technologies, Si-based devices have emerged as one of the main candidates for such applications, and several devices, including modulators 1-5 , add-drop filters 6 and wavelength division multiplexers (WDM) 7 have already been demonstrated. An important branch of this technology is the ability to program reconfigurable optical circuits. Indeed, a reprogrammable optical circuit that can hold its configuration without an external continuous source is extremely desirable for a multitude of applications ranging from photonic routers to optical cognitive networks. Recently, new solutions for non-volatile photonic memories have been proposed, involving the use of phase-change materials (PCM) and microring resonators 8,9 .Herein, a non-volatile Si microring resonator optical switch is demonstrated. A thin film of the phasechange material 10 (PCM) Ge 2 Sb 2 Te 5 (GST), which is commonly encountered in optical and electrical data storage applications [11][12][13][14] , is used to switch the resonant frequency and Q-factor of the microring resonator. GST shows high optical contrast between its amorphous, covalently bonded, and crystalline, resonantly bonded, structural phases 15-18 (n cryst − n amorph = 2.5 ; k cryst − k amorph = 1 at 1.55 µm) 19 . Moreover, transitions between the two phases can take place on a sub-ns timescale 20,22 while the resulting final state is stable for several years. These characteristics deem this material appropriate for application in reconfigurable optical circuits.The device, shown in Fig. 1, consists of a Si microring resonator with a bend radius of 5 µm and a coupling region of 3 µm, on top of which a GST thin film with an area of 3×1.5 µm 2 has been deposited. A second Si a) miquel.rude@icfo.es microring with identical dimensions but free of GST is used as a reference during the measurements. A 200 nm gap separates both microrings from a Si strip waveguide (220×440 nm 2 ) with grating couplers 23 at both ends, which are used to deliver light into the device and monitor the transmitted spectrum using single-mode fibers (SMF).

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“…A drawback of such tight light confi nement is the increased sensitivity to sidewall roughness; much larger scattering loss is typically observed in such devices. Around 2 dB cm -1 loss was reported for a device prepared using deep-ultraviolet photolithography and dry-etching processes [7]. More recently, <1 dB cm -1 loss was reported for devices fabricated by electron-beam lithography and dry-etching [8].…”

Section: Passive Waveguide Devicesmentioning

confidence: 99%

Device engineering for silicon photonics

Chen

Tsang

2011

NPG Asia Mater

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A fter an impressive initial spurt of progress in device engineering during the early 2000s when the optical communications industry saw unprecedented levels of investment, silicon photonics continues to develop at an amazing pace. Many novel applications and devices are emerging. Silicon photonics has the potential to become a major platform for optoelectronic integrated circuits (OEICs) and to be used in high-speed optical interconnects for chip-level data communications because of the extremely large bandwidth and high speed off ered by optical communications. Many challenges have been addressed through the introduction of innovative ideas, paving the way for the practical deployment of silicon-based optoelectronic devices and integrated photonic circuits in computing and telecommunication systems [1]. Th e commercialization of silicon photonics, originally driven by applications in telecommunications, is now also driven by the needs of the computing industry for highspeed, energy-effi cient optical cable technology, such as the Light Peak Technology under development by Intel (USA). Th e California-based company Luxtera (USA) has also commercialized a series of siliconphotonic transceiver systems.Silicon off ers many advantages over alternative material systems (e.g. InP, GaAs, LiNbO 3 ) for OEIC applications. One major reason for the wide interest that silicon photonics is attracting is the cost advantage that silicon photonics can potentially off er through its compatibility with the complementary metal-oxide-semiconductor (CMOS) fabrication processes used in the microelectronics industry. Th e huge investments that have been made in CMOS microelectronics fabrication technologies has resulted in processes that off er much higher yield than is possible using alternative materials for photonics, thus making feasible large-scale integration and the production of silicon-photonic devices that are monolithically integrated with not only optical components but also electronic circuits in the same platform at ultrahigh density. Another reason for the attractiveness of silicon photonics is the high refractive index contrast between the silicon core (refractive index, 3.48) and silicon dioxide cladding (refractive index, 1.45) in silicon-on-insulator (SOI) devices, which ensures the submicrometer confi nement of light and allows tight bending in optical waveguides. Th e high-density integration of photonic circuits on SOI platforms is thus feasible. Th e low cost of high-quality SOI wafers is another advantage of silicon photonics. All kinds of low-cost devices enabled by silicon photonics are therefore predicted, and these may also enjoy the other benefi ts of monolithic integration: smaller size, increased power effi ciency and improved reliability. Figure 1 shows an example of a high-density integrated photonics devices fabricated on a 6-inch SOI wafer using CMOS-compatible technology.In this article, we review some of the exciting progress that has been made in silicon photonics with the aim of providing a broa...

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Low-Loss SOI Photonic Wires and Ring Resonators Fabricated With Deep UV Lithography

Cited by 410 publications

References 8 publications

Light emission and enhanced nonlinearity in nanophotonic waveguide circuits by III–V/silicon-on-insulator heterogeneous integration

Light emission and enhanced nonlinearity in nanophotonic waveguide circuits by III–V/silicon-on-insulator heterogeneous integration

Optical switching at 1.55 μm in silicon racetrack resonators using phase change materials

Device engineering for silicon photonics

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