Low-noise epitaxial graphene on SiC Hall effect element for commercial applications

Ciuk, Tymoteusz; Petruk, Oleg; Kowalik, Artur; Jóźwik, I.; Rychter, A.; Szmidt, J.; Strupiński, W.

doi:10.1063/1.4953258

Cited by 25 publications

(9 citation statements)

References 17 publications

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“…The main result of this transformation is the change of the intrinsic doping from electron to hole type (due to the spontaneous polarization (SP) of the SiC substrate) and the significant enhancement of carrier mobilities (due to effective decoupling of graphene from the substrate) 10,15,16 . While QFSG had already resulted in improved intrinsic cut-off frequency graphene field-effect transistors (GFET) 6 and low-noise Hall effect sensors 17 , there are currently no studies investigating the changes in its electronic properties due to atmospheric influence, in particular changes in humidity. Since water is the most abundant dipole adsorbate in the ambient air, it is important to investigate its effects on QFSG.…”

Section: Introductionmentioning

confidence: 99%

Tuning epitaxial graphene sensitivity to water by hydrogen intercalation

et al. 2017

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The effects of humidity on the electronic properties of quasi-free standing one layer graphene (QFS 1LG) are investigated via simultaneous magneto-transport in the van der Pauw geometry and local work function measurements in a controlled environment. QFS 1LG on 4H-SiC(0001) is obtained by hydrogen intercalation of the interfacial layer. In this system, the carrier concentration experiences a two-fold increase in sensitivity to changes in relative humidity as compared to the as-grown epitaxial graphene. This enhanced sensitivity to water is attributed to the lowering of the hydrophobicity of QFS 1LG, which results from spontaneous polarization of 4H-SiC(0001) strongly influencing the graphene. Moreover, the superior carrier mobility of the QFS 1LG system is retained even at the highest humidity. The work function maps constructed from Kelvin probe force microscopy also revealed higher sensitivity to water for 1LG compared to 2LG in both QFS 1LG and as-grown systems. These results point to a new field of applications for QFS 1LG, i.e., as humidity sensors, and the corresponding need for metrology in calibration of graphene-based sensors and devices.

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Section: Introductionmentioning

confidence: 99%

Tuning epitaxial graphene sensitivity to water by hydrogen intercalation

et al. 2017

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“…The significant doping of graphene in the all-CVD heterostructure devices is another major reason behind the reduced Hall sensitivities and it could be due to contaminations introduced during wet-transfer process of large area graphene and h-BN layers. This could explain also the significantly lower minimum magnetic field resolution of Hall sensors based on all-CVD h-BN/graphene/h-BN heterostructures compared to previous reports on graphene Hall sensors 17,[19][20][21][22] . These are currently the practical challenges for the development of graphene and 2D materials science and technology.…”

Section: Discussionmentioning

confidence: 71%

“…Thus, current-related sensitivities SI~5700 V/AT were obtained on stacks of all-exfoliated h-BN/graphene/h-BN 17 , SI~2270 V/AT on single crystal CVD graphene patches encapsulated between exfoliated h-BN 18 , and SI~1986 V/AT with batch-fabricated CVD graphene on in-situ grown CVD h-BN substrate without top encapsulation 19 . In addition to increased sensitivities, high linearity 12,20 and low noise of the devices [20][21][22] combined with transparency and flexibility 18,23 generates a high interest in graphene for the use in magnetic Hall sensors. However, for practical utilization in ambient environment over longer period, there is a necessity to investigate graphene Hall sensors fabricated by a scalable process using all-CVD grown 2D material heterostructures with full encapsulation of graphene active region.…”

Section: Introductionmentioning

confidence: 99%

Hall sensors batch-fabricated on all-CVD h-BN/graphene/h-BN heterostructures

Dankert

Dash

2017

Sci Rep

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The two-dimensional (2D) material graphene is highly promising for Hall sensors due to its potential of having high charge carrier mobility and low carrier concentration at room temperature. Here, we report the scalable batch-fabrication of magnetic Hall sensors on graphene encapsulated in hexagonal boron nitride (h-BN) using commercially available large area CVD grown materials. The all-CVD grown h-BN/graphene/h-BN van der Waals heterostructures were prepared by layer transfer technique and Hall sensors were batch-fabricated with 1D edge metal contacts. The current-related Hall sensitivities up to 97 V/AT are measured at room temperature. The Hall sensors showed robust performance over the wafer scale with stable characteristics over six months in ambient environment. This work opens avenues for further development of growth and fabrication technologies of all-CVD 2D material heterostructures and allows further improvements in Hall sensor performance for practical applications.

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“…QFS graphene [ 26 , 27 , 28 , 29 ] necessary for the graphene-based HTHS was grown on semi-insulating high-purity on-axis 4H-SiC(0001) (Cree Inc.) in a hot-wall Aixtron VP508 reactor using the epitaxial Chemical Vapor Deposition method [ 30 ], with thermally decomposed propane as a carbon source and in situ hydrogen atom intercalation [ 31 ]. The substrate was processed into a 1.6 mm × 1.6 mm Hall effect structure featuring a cross-shaped [ 32 ] 100

m × 300

m graphene mesa and four Ti/Au (10 nm / 60 nm) ohmic contacts, all passivated with a 100 nm-thick aluminum oxide (Al 2 O 3 ) layer synthesized from trimethylaluminum (TMA) and deionized water at 670 K in a Picosun R200 Advanced Atomic Layer Deposition (ALD) reactor [ 33 , 34 ]. Detailed information on the fabrication processes is included in Refs.…”

Section: Methodsmentioning

confidence: 99%

The Comparison of InSb-Based Thin Films and Graphene on SiC for Magnetic Diagnostics under Extreme Conditions

El-Ahmar

Przychodnia

Jankowski

et al. 2022

Sensors

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The ability to precisely measure magnetic fields under extreme operating conditions is becoming increasingly important as a result of the advent of modern diagnostics for future magnetic-confinement fusion devices. These conditions are recognized as strong neutron radiation and high temperatures (up to 350 °C). We report on the first experimental comparison of the impact of neutron radiation on graphene and indium antimonide thin films. For this purpose, a 2D-material-based structure was fabricated in the form of hydrogen-intercalated quasi-free-standing graphene on semi-insulating high-purity on-axis 4H-SiC(0001), passivated with an Al2O3 layer. InSb-based thin films, donor doped to varying degrees, were deposited on a monocrystalline gallium arsenide or a polycrystalline ceramic substrate. The thin films were covered with a SiO2 insulating layer. All samples were exposed to a fast-neutron fluence of ≈7×1017 cm−2. The results have shown that the graphene sheet is only moderately affected by neutron radiation compared to the InSb-based structures. The low structural damage allowed the graphene/SiC system to retain its electrical properties and excellent sensitivity to magnetic fields. However, InSb-based structures proved to have significantly more post-irradiation self-healing capabilities when subject to proper temperature treatment. This property has been tested depending on the doping level and type of the substrate.

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Low-noise epitaxial graphene on SiC Hall effect element for commercial applications

Cited by 25 publications

References 17 publications

Tuning epitaxial graphene sensitivity to water by hydrogen intercalation

Tuning epitaxial graphene sensitivity to water by hydrogen intercalation

Hall sensors batch-fabricated on all-CVD h-BN/graphene/h-BN heterostructures

The Comparison of InSb-Based Thin Films and Graphene on SiC for Magnetic Diagnostics under Extreme Conditions

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