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In this report, we demonstrate a complete Hall effect element that is based on quasi-free-standing monolayer graphene synthesized on a semi-insulating on-axis Si-terminated 6H-SiC substrate in an epitaxial Chemical Vapor Deposition process. The device offers the current-mode sensitivity of 87 V/AT and low excess noise (Hooge's parameter αH < 2 × 10−3) enabling room-temperature magnetic resolution of 650 nT/Hz0.5 at 10 Hz, 95 nT/Hz0.5 at 1 kHz, and 14 nT/Hz0.5 at 100 kHz at the total active area of 0.1275 mm2. The element is passivated with a silicone encapsulant to ensure its electrical stability and environmental resistance. Its processing cycle is suitable for large-scale commercial production and it is available in large quantities through a single growth run on an up to 4-in SiC wafer.

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The paper presents numerical model and validation of new methodology of offset voltage minimization in the Hall-effect sensors. Model of the Hall-effect sensor with multiple electric pins was developed. Mathematical equations used for calculation of electric potential difference were formulated. Simulations were carried out using finite elements method in ELMER FEM software. Performed investigation of actual parameters of newly designed Hall-effect sensor confirms effectiveness of the described method.