Low-Noise Microwave Devices: AlGaN/GaN High Electron Mobility Transistors and Oscillators

Vitusevich, S. А.

doi:10.1109/msmw.2007.4294574

Cited by 3 publications

(1 citation statement)

References 12 publications

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“…[5] with -118 dBc/Hz phase noise at 100 kHz offset and in Ref. [6] with -105 dBc/Hz phase noise at 100 kHz offset, which can compete against with its more mature counterparts. So if the improvement in noise continues as GaN technology becomes more mature, AlGaN/GaN HEMT will be an ideal choice for use in microwave source applications since using this technology can reduce overall system size, cost and complexity.…”

Section: Introductionmentioning

confidence: 99%

An 8 GHz high power AlGaN/GaN HEMT VCO

et al. 2010

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A high power X-band hybrid microwave integrated voltage controlled oscillator (VCO) based on Al-GaN/GaN HEMT is presented. The oscillator design utilizes a common-gate negative resistance structure with open and short-circuit stub microstrip lines as the main resonator for a high Q factor. The VCO operating at 20 V drain bias and -1.9 V gate bias exhibits an output power of 28 dBm at the center frequency of 8.15 GHz with an efficiency of 21%. Phase noise is estimated to be -85 dBc/Hz at 100 kHz offset and -128 dBc/Hz at 1 MHz offset. The tuning range is more than 50 MHz. The dominating effect of GaN HEMT's flicker noise on oscillator phase noise performance has also been discussed. The measured results show great promise for AlGaN/GaN HEMT technology to be used in high power and low phase noise microwave source applications.

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Section: Introductionmentioning

confidence: 99%

An 8 GHz high power AlGaN/GaN HEMT VCO

et al. 2010

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High microwave power source for 2.45 GHz wireless power charger applications

Kao

Yeh

Shih

et al. 2013

International Journal of Electronics

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The first report on a GaN-on-Si high electron-mobility transistor (HEMT) differential oscillator is presented. A high output power and low phase noise, 2.45 GHz crosscoupled pair voltage-controlled oscillator (VCO), using 0.35 μm GaN HEMT on silicon substrate technology is described. The VCO can be tuned, between 2.41 GHz and 2.53 GHz, and has a low phase noise, of -129.09 dBc/Hz, at 1 MHz offset. The output power of the VCO is 18.31 dBm at 2.53 GHz from a 15 V power supply, while the total die size was 0.87 mm 2 . The high output power and low phase noise are obtained for wireless power charger applications.

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High Power and Low Phase Noise MMIC VCO Using 0.35m GaN-on-Si HEMT

Kao¹,

Wang²,

Yeh³

et al. 2013

IJCTE

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Abstract-A low phase noise and high power MMIC VCO using GaN-on-Si is presented. The VCO is based on common source series feedback to generate the negative resistance, using 0.35 m GaN HEMT on silicon substrate technology. The VCO can be tuned, between 3.92 GHz and 4.39 GHz, and has low phase noise, of-119 dBc/Hz, at a 1 MHz offset. The output power of the VCO is 14.5 dBm at 4.2 GHz from a 20 V power supply, while the total die size was 1.35 mm 2 .  Index Terms-VCO, output power, phase noise, GaN HEMT, GaN-on-Si.

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Low-Noise Microwave Devices: AlGaN/GaN High Electron Mobility Transistors and Oscillators

Cited by 3 publications

References 12 publications

An 8 GHz high power AlGaN/GaN HEMT VCO

An 8 GHz high power AlGaN/GaN HEMT VCO

High microwave power source for 2.45 GHz wireless power charger applications

High Power and Low Phase Noise MMIC VCO Using 0.35m GaN-on-Si HEMT

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