Low-Noise, Single-Polarized, and High-Speed Vertical-Cavity Surface-Emitting Lasers for Very Short Reach Data Communication

Huang, Yen-Yu; Chang, Yang-Lang; Zhao, Yaung-Cheng; Khan, Zuhaib; Ahmad, Zohauddin; Lee, Chia‐Hung; Chang, J. W.; Liu, Cheng-Yi; Shi, Jin‐Wei

doi:10.1109/jlt.2022.3151905

Cited by 4 publications

(2 citation statements)

References 34 publications

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“…The VCSEL main polarization direction is perpendicular to the laser column, and the final achieved orthogonal polarization rejection ratio(OPSR) is 25 dB [ 67 ].The stress T-bar structure is also used for polarization control, and its structure is shown in Figure 8 c. This structure reduces the probability of polarization flip from 32% to 2% compared to the circularly symmetric structure [ 68 ]. In 2022, Yen-Yu Huang et al achieved polarization control by strain introduced by plating the copper substrate on the back of the VCSEL, which was experimentally shown to enhance OPSR without degrading slope efficiency [ 69 ]. Another way to introduce non-uniform loss is to etch elliptical holes on the top DBR of the VCSEL, which not only ensures that the VCSEL is emitted in a single transverse mode but also stabilizes the polarization direction of the VCSEL, as Figure 8 d shows.…”

Section: Polarization Control Of Vcsel For Chip-scale Atomic Devicementioning

confidence: 99%

Application of VCSEL in Bio-Sensing Atomic Magnetometers

et al. 2022

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Recent years have seen rapid development of chip-scale atomic devices due to their great potential in the field of biomedical imaging, namely chip-scale atomic magnetometers that enable high resolution magnetocardiography (MCG) and magnetoencephalography (MEG). For atomic devices of this kind, vertical cavity surface emitting lasers (VCSELs) have become the most crucial components as integrated pumping sources, which are attracting growing interest. In this paper, the application of VCSELs in chip-scale atomic devices are reviewed, where VCSELs are integrated in various atomic bio-sensing devices with different operating environments. Secondly, the mode and polarization control of VCSELs in the specific applications are reviewed with their pros and cons discussed. In addition, various packaging of VCSEL based on different atomic devices in pursuit of miniaturization and precision measurement are reviewed and discussed. Finally, the VCSEL-based chip-scale atomic magnetometers utilized for cardiac and brain magnetometry are reviewed in detail. Nowadays, biosensors with chip integration, low power consumption, and high sensitivity are undergoing rapid industrialization, due to the growing market of medical instrumentation and portable health monitoring. It is promising that VCSEL-integrated chip-scale atomic biosensors as featured applications of this kind may experience extensive development in the near future.

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Section: Polarization Control Of Vcsel For Chip-scale Atomic Devicementioning

confidence: 99%

Application of VCSEL in Bio-Sensing Atomic Magnetometers

et al. 2022

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“…Strong interest exists for the characterization of devices and materials, with new approaches to extract material and device parameters [1]. Our interest lies in estimation of strain in III-V materials and devices by analysis of the degree of polarization (DOP) of luminescence, for which engagement is strong and current [2][3][4][5][6][7][8][9][10]. The DOP of luminescence from InP and GaAs, and related compounds, is a sensitive function of the strain in these III-V materials [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Degree of Polarization of Cathodoluminescence from a GaAs Facet in the Vicinity of an SiN Stripe

Cassidy

Landesman

Mokhtari³

et al. 2023

Optics

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Measurements of the cathodoluminescence (CL) and the degree of polarization (DOP) of (CL) from the facet of a GaAs substrate and in the vicinity of a SiN stripe are reported and analyzed. The deformation induced by the SiN stripe is estimated by fitting the measured DOP to 3D finite element method (FEM) simulations. The deformation is found to be more complex than an initial condition of biaxial stress in the SiN. A ratio of fit coefficients suggests that the dependence of DOP on strain is described by equations presented in Appl. Opt. 59, 5506–5520 (2020). These equations give a DOP that is either proportional to a weighted difference of the principal components of strain in the measurement plane, or proportional to the shear strain in the measurement plane, depending on the chosen orientation of the measurement axes.

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