Low-noise wideband indium-phosphide transferred-electron amplifiers

Braddock, P.W.; Gray, K.W.

doi:10.1049/el:19730025

Cited by 11 publications

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“…So far, high purity epitaxial layers were grown by vapor phase epitaxy in particular by the Effer method (2,3). Net electron concentrations of n --4 9 1014 cm -~ and mobilities of ~77K : 87,000 cm 2 V -1 sec -1 were obtained.…”

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“…During the last years there has been an increasing interest in high purity epitaxial layers of InP, for instance for Gunn effect applications (1). So far, high purity epitaxial layers were grown by vapor phase epitaxy in particular by the Effer method (2,3). Net electron concentrations of n --4 9 1014 cm -~ and mobilities of ~77K : 87,000 cm 2 V -1 sec -1 were obtained.…”

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Liquid Phase Epitaxy of InP

Hess

Stath²,

Benz³

1974

J. Electrochem. Soc.

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Liquid phase epitaxy by conventional tipping technique has been employed for the growth of high purity InP epitaxial layers. The layers were grown at 720~176on (100) and (111) oriented InP substrates. Characteristic surface structures for the substrate orientations as a function of the growth temperature were observed. The layers were characterized by Hall data and photoluminescence measurements at low temperatures. The simultaneous observation of the band-acceptor and donor-acceptor pair transition due to the main acceptor in our LPE-layers is reported. The binding energy of this acceptor is determined to EA1 = 41.0 meV (• meV).During the last years there has been an increasing interest in high purity epitaxial layers of InP, for instance for Gunn effect applications (1). So far, high purity epitaxial layers were grown by vapor phase epitaxy in particular by the Effer method (2, 3). Net electron concentrations of n --4 9 1014 cm -~ and mobilities of ~77K : 87,000 cm 2 V -1 sec -1 were obtained. In the case of GaAs liquid phase epitaxy (LPE) has been very successful in the preparation of high purity epitaxial layers (4-8). One should therefore expect similar good results for the case of InP. In this paper the growth of high purity InP layers is described in connection with Hall data and photoluminescence measurements at low temperatures. Previous works on InP LPE were done by several authors (9-11). The best values for the LPE-layers with ND --NA ----2 9 1015 cm -3 and ~77K ----49,000 cm 2 V-' see-' were reached by Wood et al. (11). Recently Astles et al. (12) have reported on the growth of InP by LPE from solutions saturated with P from PH3. Values of ND --NA ----3 9 10 '5 cm -3 and #77 ----27,000 cm 2 V-' see -1 have been reported. LPE--Apparatus and Experimental ProcedureThe experience from LPE growth of high purity GaAs has been that the growth results are strongly influenced by the way in which the growth process is performed (13,14). Important steps are: (i) heating of In-InP solution, (ii) preparation of the single-crystal substrate, (iii) equilibration and homogenization of the solution, and (iv) tipping the solution on the substrate. In the following we describe the corresponding conditions for InP-LPE. For the growth experiments we used a tipping system (14) (schematically shown in Fig. 1). The reaction tube was made of suprasil quartz, the boat for the In-InP solution of high purity graphite. The tube and boat were locked together and could be rotated around the long axis for immersion and withdrawal of the substrate from the solution. To avoid air leaks we used a Pyrex spiral which allowed the rotation of the tube without moving joints. The furnace was transparent (15) in order to observe substrate and solution. The graphite boat was heated at T ----1600~ under a vacuum of 10 -6 Torr for 3 hr. After that, the boat was loaded with 6N In (Johnson Matthey Limited, England) and baked at T : 730~ in the reaction tube for 10 hr under a Pd-diffused H2 gas flow. At the end of this procedure the boat was coole...

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Liquid Phase Epitaxy of InP

Hess

Stath²,

Benz³

1974

J. Electrochem. Soc.

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“…The idea of FET-BJT was reused in 1970, but this time for discrete amplifiers [8]. In fact, the 1970s was the advent of 'wideband low-noise amplifier' as an RF topic [8][9][10][11][12][13][14]. Engineers focussed on applying monolithic integrated-circuit process which had been developed in 1957-1959 [15] to fabricate BJT-integrated wideband amplifiers [11][12][13][14] instead of discrete ones [5,8].…”

Section: In the 1970smentioning

confidence: 99%

“…They proposed different topologies and techniques such as distortion cancellation and notch filter to remove the effects of blockers and interferers, noise cancellation and g m ‐boosting to decrease noise figure (NF), common gate (CG) to have the input impedance matching, and also inductive peaking and g m ‐boosting to achieve gain flatness. This article comprehensively illustrates UWB LNA, such a book chapter for trained readers, which has not been carried out before [1–50, 51–100, 101–150, 151–200, …”

Section: Introductionmentioning

confidence: 99%

Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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To the best of the author's knowledge, several studies during 1960-2019 were carried out on wideband and ultrawideband LNAs just to render optimum LNAs for SAW-less Radio-Frequency Integrated Circuits (RFICs) but none of these works reviewed and taught the proceedings of these six decades, hence the lack of a comprehensive review is quite noticeable. This article specifically studies the challenges and solutions of designing UWB LNA by reviewing topologies and techniques such as inductive peaking, noise and distortion cancellation, g m -boosting, active inductor and notch filter. Its historical aspect illustrates when the idea of wideband LNA was born and how it changed to ultrawideband LNA, and its tutorial aspect discusses circuits and achievements to present optimum LNAs in Complementary MOS (CMOS), BiCMOS and High-Electron-Mobility Transistor (HEMT) technologies. This work describes the endeavours of engineers in reaching UWB LNA from narrowband LNA during six decades that have great importance as a chapter in understanding this topic because it teaches all topologies, techniques, circuits and related events in a historical narrative for trained readers who are not experts on this topic. | UWB LNA | In the 1960sWhere did the idea of 'transistorised wideband LNA' originate from? It seems that everything goes back to the 1960s when This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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“…(vi) the injected particle current density at the injecting plane (x = 0, see Figure 1) may be expressed as J"l(0) = &ocE,(O) (2) where J , , E are the electron current density and electric field, respectively; E is the dielectric constant ofthe semiconductor; 0, is a rational function of complex frequency (it may be a constant); E,(x) = E,(O) for -d < x 6 0, (vii) noise in the device is due to two uncorrelated noises ; -injection noise (shot noise) and -velocity fluctuation noise (diffusion noise). We introduce the following notations w, z = -= transit time;…”

Section: Introductionmentioning

confidence: 99%

A lumped‐distributed small‐signal model for a class of transit‐time semiconductor devices

Quang

1976

Circuit Theory & Apps

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SUMMARYIn this paper a new lumped-distributed small-signal and noise model is presented for a class of transit-time semiconductor devices including the IMPATT, BARITT, Transferred Electron and Space Charge Limited (SCL) diodes. The assumption of uniform carrier velocity is made and diffusion is neglected. The diode-model is composed of lumped elements and dispersionless transmission lines, hence it is very suitable for computer-aided circuit analysis. Broad agreement has been found between the experimental behaviour of devices and that of their models.

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Low-noise wideband indium-phosphide transferred-electron amplifiers

Cited by 11 publications

References 0 publications

Liquid Phase Epitaxy of InP

Liquid Phase Epitaxy of InP

Ultrawideband LNA 1960–2019: Review

A lumped‐distributed small‐signal model for a class of transit‐time semiconductor devices

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