Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric

Abstract

Although several high-k insulators have been deposited on the diamond for metal-insulator-semiconductor field effect transistors (MISFETs) fabrication, the k values and current output are still not fully satisfactory. Here, we present a high-k ZrO2 layer on the diamond for the MISFETs. The k value for ZrO2 is determined by capacitance-voltage characteristic to be 15.4. The leakage current density is smaller than 4.8 × 10−5 A·cm−2 for the gate voltage ranging from −4.0 to 2.0 V. The low on-resistance MISFET is obtained by eliminating source/drain-channel interspaces, which shows a large current output and a high extrinsic transconductance. The high-performance diamond MISFET fabrication will push forward the development of power devices.

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

“…In order to solve this problem, some gate dielectrics with higher dielectric constant than SiO 2 (k ¼ 3.9) have been paid more attention, such as Ta 2 O 5 , HfO 2 , Al 2 O 3 , TiO 2 , Y 2 O 3 , ZrO 2 , etc. [2][3][4][5][6][7][8][9][10]. Among these gate oxides, zirconium oxide (ZrO 2 ) is one of the attractive materials.…”

A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface

“…The surface passivation of diamond, i.e., other thin oxides, by combining with the interfacial hydrogen content control can be used to further suppress the interface states for MOSFET fabrication based on the TiO 2 /H-diamond (100). The k value of 100 is much higher than those insulators reported on diamond, [9][10][11][12][13] which offers the advantage of low gate voltage control of the channel charges of diamond MOSFETs.…”

“…Up to now, various oxides such as Al 2 O 3 , HfO 2 , and ZrO 2 were utilized as the gate dielectric for H-diamond MOSFETs. [9][10][11][12][13] Titanium oxide (TiO 2 ) was also reported by our group as the gate dielectric on H-diamond, resulting in normally off MOSFETs when using a low-temperature oxidation method. 14 Ideal TiO 2 has a high dielectric constant up to 100, which has the potentiality to control high carrier densities even at small electric fields to improve the output of diamond MOSFETs.…”

Fabrication of Low Dislocation Density, Single-Crystalline Diamond via Two-Step Epitaxial Lateral Overgrowth

“…Diamond exhibits attractive intrinsic properties, such as a wide band gap energy (5.47 eV), high electric breakdown field (10 MV·cm −1 ), high carrier mobility (3800 cm 2 ·V −1 ·s −1 for holes), high thermal conductivity (22 W·cm −1 ), and low dielectric constant (~5.7), making it a promising material for future electronic devices [1][2][3][4][5]. However, extended defects, such as dislocations and stacking faults, are common in both natural and synthetic diamond.…”