Low onset voltage of GaN on Si Schottky barrier diode using various recess depths

Abstract

A low onset voltage AlGaN/GaN diode with a width of 14 mm is achieved. The recess depth of the AlGaN layer is responsible for the low onset voltage. In comparison with the conventional non-recessed diode, the onset voltage reduces by 45% along with a decrease of reverse leakage current by about one order of magnitude.

2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure

“…However, for AlGaN/GaN SBD, the accuracy of etching depth is not that important, as long as the anode is in direct contact with the GaN channel, and don't go deep into the GaN buffer. Reports and our experiment have shown that different etching depth of anode has no deep influence on the performance of the device [27], because it is the conduction between anode and cathode, the AlGaN below the anode is not that important. This makes the range of anode recess depth larger.…”

The Influence of Recessed Floating Metal Rings Structure on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes

“…The V BR of the C‐SBDs and RA‐SBDs are 1140 and 1167 V, respectively, indicating no significant dependency between the breakdown voltage and the recessed anode structure. [ 15 ] These values of the FMR‐SBDs and RFMR‐SBDs are 1540 and 1980 V, which shows the SBDs with FMR structure achieving the significant improvement in V BR . It can be explained that the electric field under the anode Schottky junction is distributed to the FMR due to the expansion of the depletion region.…”

High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing

“…The lateral Schottky barrier diode (SBD) based on the AlGaN/GaN structure has received extensive attention. [ 1–24 ] Furthermore, GaN has a critical breakdown electric field ( EF ) of up to 3.4 MV cm −1 , [ 25 ] which is much higher than other semiconductor materials, such as Si (0.3 MV cm −1 ), GaAs (0.4 MV cm −1 ), and SiC (2.0 MV cm −1 ). Based on the above‐mentioned material advantages, currently AlGaN/GaN‐based electronic devices can be widely used in high‐power and high‐frequency electronics fields of medium and high voltage range.…”

“…Lots of high‐performance AlGaN/GaN lateral SBD devices have been reported, [ 1–22 ] such as SBDs on Si with breakdown voltages up to 3.4 kV, and SBDs on sapphire with breakdown voltages >9 kV. [ 11,28,29 ] However, the GQ proposed above still has not been answered.…”