Low operating bias InAs/GaSb strain layer superlattice LWIR detector

Baril, Neil F.; Bandara, S. V.; Hoeglund, Linda; Henry, Nathan; Brown, Alexander; Billman, C.; Maloney, Patrick; Nallon, Eric C.; Tidrow, Meimei Z.; Pellegrino, Joseph G.

doi:10.1016/j.infrared.2014.10.013

Cited by 7 publications

(1 citation statement)

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“…Recently, InAs/InAs1-xSbx type-II superlattices (T2SL) have received considerable attention as a new III-V based IR detection material [1,2], an alternative to the much more extensively studied InAs/GaSb T2SLs [3][4][5][6], that could complement the widely used bulk HgCdTe alloys in middle and long wavelength infrared detection [7][8][9][10]. Improved minority carrier lifetimes and dark currents, compared to InAs/GaSb SLs, have been reported for the InAs/InAs1-xSbx SLs and their devices [11,12], which is generally believed to be related to the absence of Ga in this system [13,14].…”

Section: Introductionmentioning

confidence: 99%

Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice InAs/InAs1−xSbx

et al. 2017

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InAs/InAs1-xSbx superlattice system differ distinctly from two well-studied superlattice systems GaAs/AlAs and InAs/GaSb, in terms of electronic band alignment, common-element at the interface, and phonon spectrum overlapping of the constituents. This fact leads to unique electronic and vibrational properties of the InAs/InAs1-xSbx system when compared to the other two systems. In this work, we report a polarized Raman study on the vibrational properties of the InAs/InAs1-xSbx SLs as well as selected InAs1-xSbx alloys, all grown on GaSb substrates by either MBE or MOCVD, from both growth surface and cleaved edge. In the SL, from the (001) backscattering geometry, an InAs-like LO mode is observed as the primary feature and its intensity is found to increase with increasing Sb composition; from the (110) cleaved edge backscattering geometry, an InAs-like TO mode is observed as the main feature in two crosspolarization configurations, but an additional InAs-like "forbidden" LO mode was observed in two parallel-polarization configurations. InAs1-xSbx alloys lattice-matched to the substrate (xSb ~ 0.09) grown by MBE were also found to exhibit the "forbidden" LO mode, implying the existence of some unexpected [001] modulation, but the strained xSb ~ 0.35 samples grown by MOCVD were found to behavior like a disordered alloy. The primary conclusions are (1) the InAs-like LO or TO mode could be either a confined or quasi-confined mode in the InAs layers of the SL or extended mode of the whole structure, depending on the Sb composition; (2)InAs/InAsSb and InAs/GaSb SLs exhibit significantly different behaviors in the cleaved edge geometry, but qualitatively similar in the (001) geometry; and (3) the appearance of the "forbidden" LO-like mode is a universal signature for SLs and bulk systems resulting from mixing of phonon modes due to structural modulation or symmetry reduction.3

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