Low-operating-voltage polymeric transistor with solution-processed low-k polymer/high-k metal-oxide bilayer insulators

Yang, Feng-Yu; Chang, Kang-Ming; Hsu, Meei-Yu; Liu, Cheng-Chin

doi:10.1016/j.orgel.2008.06.002

Cited by 24 publications

(8 citation statements)

References 22 publications

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“…Oleic acid was reported to be a common surface modifier for TiO 2 nanofillers. 225 However, a further modification step is needed to achieve desired hydrophobicity and compatibility with a given matrix. Diethyl (2-cyanoethyl)phosphonate (DCP) can react with the oleic acid functional groups to achieve DCP-TiO 2 , and the processability of the NPs in polar solvents can be improved.…”

Section: Polymer Nanocomposite Gate Dielectricsmentioning

confidence: 99%

Polymer-Based Gate Dielectrics for Organic Field-Effect Transistors

et al. 2019

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Polymer-based gate dielectrics have received growing attention due to their important role in field-effect transistors (OFETs). This review article aims to present the recent progress of polymer dielectrics for high-performance OFET applications. We first discuss the requirements for polymer dielectrics in tailoring the overall performance of OFETs from the perspective of both bulk material properties and surface characteristics of the polymers. On this basis, we introduce the design strategies and desired processing techniques of polymer dielectrics for optimizing the charge transport and stabilizing the operation of OFETs. Then, we highlight the recent advances in polymer-based dielectrics by classifying and comparing different categories of polymeric materials as well as polymer nanocomposites, and focus is also given to elucidating the critical relationships between polymer structures, gate dielectric properties and OFET performance. Finally, a perspective of future research directions and challenges for polymer dielectrics is provided.

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Section: Polymer Nanocomposite Gate Dielectricsmentioning

confidence: 99%

Polymer-Based Gate Dielectrics for Organic Field-Effect Transistors

et al. 2019

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“…Second, by using double layers composed of high-k material and polymer as gate insulators. Yang et al [13,14] reported a drastic increase of capacitance obtained from double layers of TiO 2 and PVP films. They noted that the capacitance was directly proportional to the dielectric constant.…”

Section: Introductionmentioning

confidence: 99%

PMMA/High-k Self-assembled TiO2/PMMA Multi-layer Gate Dielectric for P3HT Organic Field Effect Transistors

Houngkamhang

Inpor

Thanachayanont

et al. 2021

Curr. Appl. Sci. Technol.

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In this work, a multi-layer structure of poly (methyl methacrylate)/ titanium dioxide/poly (methyl methacrylate) (PMMA/TiO₂ /PMMA; PTP) was proposed as a top-gate insulator for P3HT-based organic field-effect transistors (OFETs). Adding a TiO₂ interlayer as a high dielectric constant (high-k) material into PMMA film enables the modification of the dielectric constant of the multi-layers PTP film. The content of TiO₂ in the PTP film, which can be varied by changing the number of soaking cycles in TiO₂ solution, plays a crucial rule in modifying the dielectric constant of the PTP film. The higher the TiO₂ content used in the PTP film, the higher the dielectric constant of PTP film can be obtained. However, using high TiO₂ content led to a reduction in the dielectric constant of the PTP film due to leakage current induced by the agglomeration of TiO₂. The utilization of the top-gate insulator containing TiO₂ significantly enhanced several P3HT-OFETs characteristics, e.g., an increase in the Ion/Ioff ratio, and a decrease in the threshold voltage. However, the use of the PTP top-gate insulator with a high content of TiO₂ resulted in regressions in the OFETs characteristics, such as a decrease in carrier mobility and reduction in the Ion/Ioff ratio. OFETs operating at the optimum conditions of the PTP gate-insulator, with PTP thickness of 225 nm and RMS roughness of 20.0 nm, provided a dielectric constant of 7.13, a threshold voltage of -8.49 V, a saturation mobility of 2.2× 10-4 cm²V-1s-1, Ion/Ioff ratio of 37.9, and a subthreshold slope of 0.39 V/decade.

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“…Poly(3-hexylthiophene) (P3HT) and methylammonium lead iodide (CH 3 NH 3 PbI 3 ) perovskite are employed as the solution-processed semiconducting channels. P3HT has been used extensively in organic photovoltaics (OPV) [2] and OFETs [1,[3][4][5][6][7][8]. Perovskites, which have been extensively used in perovskite solar cells [9,10], have been recently employed in the area of thin film FETs to develop high performance devices.…”

Section: Introductionmentioning

confidence: 99%

Facile and low-cost mechanical techniques for the fabrication of solution-processed polymer and perovskite thin film transistors

Habibi

Eslamian

2018

J. Phys. Commun.

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Low-temperature solution-processed polymer and perovskite thin film field effect transistors (FETs) are attractive, as they are compatible with flexible and printed electronics. Given that chemical treatment of the FET channel is expensive and tedious, and sometimes damages the underneath (dielectric) solution-processed layers, in this work, two facile and scalable mechanical treatment techniques are proposed. In the case of polymer FET, the wet spun film was excited by ultrasonic vibration imposed on the substrate. It is demonstrated that the micromixing effect induced by the ultrasonic radiation results in disentanglement, reorganization, and recrystallization of the polymer chains in the wet film. Ultrasonic vibration also improves the film leveling and uniformity and enhances the charge mobility of the channel of the polymer FET. In the case of the perovskite FET, we found that nitrogen blowing over the spun sample of the perovskite solution is a facile, yet effective substitution for the conventional anti-solvent treatment, commonly used to control the solvent evaporation rate. By nitrogen blowing, we achieved a uniform film of perovskite deposited on a solution-processed dielectric layer with domain sizes up to several hundreds of nanometers. By applying these techniques, the linear charge mobility of 0.041 cm 2 Vs −1 and 0.055 cm 2 Vs −1 were obtained for polymer and perovskite FETs under illumination, respectively. It is shown that while the performance of the polymer FET is only slightly sensitive to illumination, the perovskite FET performs well only under illumination.

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Low-operating-voltage polymeric transistor with solution-processed low-k polymer/high-k metal-oxide bilayer insulators

Cited by 24 publications

References 22 publications

Polymer-Based Gate Dielectrics for Organic Field-Effect Transistors

Polymer-Based Gate Dielectrics for Organic Field-Effect Transistors

PMMA/High-k Self-assembled TiO2/PMMA Multi-layer Gate Dielectric for P3HT Organic Field Effect Transistors

Facile and low-cost mechanical techniques for the fabrication of solution-processed polymer and perovskite thin film transistors

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