Low-Operating-Voltage Solution-Processed InZnO Thin-Film Transistors Using High-k SrTa<sub>2</sub>O<sub>6</sub>

Li, Lü; Miura, Yuta; Nishida, Takashi; Echizen, Masahiro; Ishikawa, Yasuaki; Uchiyama, Kiyoshi; Uraoka, Yukiharu

doi:10.1143/jjap.51.03cb05

Cited by 12 publications

(7 citation statements)

References 35 publications

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“…One of the potential approaches to solve this problem is to synthesize ternary oxide alloys, which are formed by combining two dielectrics, one of which provides a high dielectric constant whereas the other one has a high band gap, thereby minimizing the electrical leakage. Several ternary oxides such as AlPO, AlNaO, TaSrO, AlZrO, HfLaO, HfSiO, MgTiO, LaAlO, and yttrium aluminum oxide (YAlO x ) have been investigated, and high‐performance oxide TFTs utilizing these dielectrics have been demonstrated.…”

Section: Electrical Properties Of Solution‐processed Yalox Dielectricsmentioning

confidence: 99%

Inkjet‐Printed and Deep‐UV‐Annealed YAlO_x Dielectrics for High‐Performance IGZO Thin‐Film Transistors on Flexible Substrates

Bolat

Fuchs

Knobelspies

et al. 2019

Adv Elect Materials

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stability when compared to their counterparts. [4] Currently existing technologies for commercial applications of TFTs use vacuum-based deposition methods and photolithographic patterning of the layers to ensure a high manufacturing yield.Due to the availability of inexpensive precursors, ease of fabrication, and applicability for large-area processing, solutionprocessed methods may offer low-cost routes for the manufacturing of oxidebased TFTs. [5] Specifically, printing offers an advantage by eliminating the necessity of photolithographic patterning of the deposited layers. However, there are still several challenges before the realization of flexible electronics based on printed oxides, and one of them is the requirement of a hightemperature post deposition annealing (PDA) of the printed layers. [6] To reduce the PDA temperature of the solution-processed layers, several methods such as deep ultraviolet (DUV) annealing, [7][8][9] flash lamp annealing, [10,11] microwave annealing, [12] and solution combustion synthesis [13][14][15][16] have been proposed for semiconductor, conductor, and dielectric layers. DUV annealing (annealing method in this study) is based on the absorption of the deep UV light (λ < 260 nm) by the precursors used in the solution-processed deposition resulting in their decomposition into active oxide layers. DUV has been demonstrated to be applicable not only to oxide dielectrics but also to the semiconductors such as indium oxide, IGZO, and indium zinc oxide. [8] As a major component of the TFT, the dielectric layer is crucial for achieving high-performance devices. The effective polarization of charges in the dielectric under the applied gate bias directly affects the amount of charges accumulated/ depleted in the channel material, which in turn indicates the switching performance of the transistor. Up to now, the majority of low-temperature solution-processed dielectric layers have been reported using spin coating methods, aiming at uniform and pinhole-free layers. [17] Several binary oxide dielectrics with high dielectric constants (high-κ) such as AlO x , YO x , HfO x , and ZrO x have been investigated for their use in oxide TFTs, and the devices with higher mobilities and lower threshold voltages rather than the devices employing SiO 2 insulators Recent developments in inkjet printing have proven it a viable method for low-cost and large-area coating of oxide materials. The main drawback of this method is the common requirement of a post-deposition annealing (PDA) of the printed layers at relatively high temperatures (T > 200 °C). This sets a requirement for the substrate to have high glass transition temperature (T g ). Toreduce the PDA temperature, deep-ultraviolet (DUV) annealing is proposed as an effective method. In this study, yttrium aluminum oxide (YAlO x ) dielectrics are realized for application in flexible electronic devices via inkjet printing and DUV annealing at a temperature of 150 °C. The effect of the Y concentration on the electrical properties of the dielectrics is i...

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Section: Electrical Properties Of Solution‐processed Yalox Dielectricsmentioning

confidence: 99%

Inkjet‐Printed and Deep‐UV‐Annealed YAlO_x Dielectrics for High‐Performance IGZO Thin‐Film Transistors on Flexible Substrates

Bolat

Fuchs

Knobelspies

et al. 2019

Adv Elect Materials

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“…Since tin oxide already contains many carriers, it can negatively impact the TFT by shifting V ON and raising the off-current value. Second, a scattering phenomenon can also occur wherein mobile carriers collide with the chloride impurities. , This results in the disruption of the conduction path, which allows the flow of mobile carriers. Moreover, solution-processed oxide films with poor metal oxide network formation contain a high number of V O , which can generate free carriers.…”

Section: Resultsmentioning

confidence: 99%

Dual Role of AgNO₃ as an Oxidizer and Chloride Remover toward Enhanced Combustion Synthesis of Low-Voltage and Low-Temperature Amorphous Rare Metal-Free Oxide Thin-Film Transistors

Quino,

Bermundo,

Kawanishi

et al. 2024

ACS Appl. Electron. Mater.

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SnO 2 transistors show great promise as an alternative to existing In 2 O 3 -based transistors, considering their abundance and similar electronic properties. However, they suffer from highly negative onvoltages, large subthreshold swings, and high processing temperatures. One of the reasons for this is the residual chloride in the SnO 2 film, which negatively impacts the transistor by increasing the defects or acting as a dopant, thereby shifting the turn-on voltage negatively and increasing the subthreshold swing. Herein, we present a facile method of producing Si x Sn y O films with fewer chloride impurities, which can be used in highperformance, solution-processed TFTs. We employed AgNO 3 as an oxidizer for a low-temperature combustion reaction at 300 °C, which simultaneously acts as a chloride remover. We successfully reduced the turn-on voltage from −35.0 to −0.7 V using this route. The subthreshold swing was decreased from 2.91 to 0.32 V/dec using the same Sn concentration. The highest mobility obtained was 1.92 cm 2 /(V s) from the 0.25 M Sn precursor at a low drain voltage of 0.1 V. This method can be used as a general route for fabricating solution process-based SnO 2 TFTs and further expanding its application to flexible devices via low-temperature combustion.

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“…Also, by adding a dopant with higher Gibbs free energy of oxidation than the host oxide, one can suppress the low‐frequency instability often occurring in solution‐processed dielectrics that can lead to the overestimation of charge carrier mobility and device instability. [ 26 ] Solution processes have been employed for the generation of ternary oxide dielectrics, including spin coating or spray pyrolysis routes for fabricating SrTa 2 O 6 , [ 27 ] LaAlO 3 , [ 26,28 ] ZrAlO x , [ 29 ] MgTiO, [ 30 ] HfLaO x , [ 31 ] HfSiO x , [ 32 ] AlNaO, [ 33 ] AlPO, [ 34 ] and Y x Al 2− x O 3 . [ 35,36 ]…”

Section: Introductionmentioning

confidence: 99%

Inkjet‐Printed Ternary Oxide Dielectric and Doped Interface Layer for Metal‐Oxide Thin‐Film Transistors with Low Voltage Operation

Gillan

Lahtinen

et al. 2021

Adv Materials Inter

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Additive solution process patterning, such as inkjet printing, is desirable for high‐throughput roll‐to‐roll and sheet fabrication environments of electronics manufacturing because it can help to reduce cost by conserving active materials and circumventing multistep processing. This paper reports inkjet printing of YxAl2−xO3 gate dielectric, In2O3 semiconductor, and a polyethyleneimine‐doped In2O3 interfacial charge injection layer to achieve a thin‐film transistor (TFT) mobility (μsat) of ≈1 cm2 V−1 s−1 at a low 3 V operating voltage. When the dielectric material is annealed at 350 °C, plasma treatment induces low‐frequency capacitance instability, leading to overestimation of mobility. On the contrary, films annealed at 500 °C show stable capacitance from 1 MHz down to 0.1 Hz. This result highlights the importance of low‐frequency capacitance characterization of solution‐processed dielectrics, especially if plasma treatment is applied before subsequent processing steps. This study progresses metal‐oxide TFT fabrication toward fully inkjet‐printed thin‐film electronics.

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Low-Operating-Voltage Solution-Processed InZnO Thin-Film Transistors Using High-k SrTa₂O₆

Cited by 12 publications

References 35 publications

Inkjet‐Printed and Deep‐UV‐Annealed YAlO_x Dielectrics for High‐Performance IGZO Thin‐Film Transistors on Flexible Substrates

Inkjet‐Printed and Deep‐UV‐Annealed YAlO_x Dielectrics for High‐Performance IGZO Thin‐Film Transistors on Flexible Substrates

Dual Role of AgNO₃ as an Oxidizer and Chloride Remover toward Enhanced Combustion Synthesis of Low-Voltage and Low-Temperature Amorphous Rare Metal-Free Oxide Thin-Film Transistors

Inkjet‐Printed Ternary Oxide Dielectric and Doped Interface Layer for Metal‐Oxide Thin‐Film Transistors with Low Voltage Operation

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Low-Operating-Voltage Solution-Processed InZnO Thin-Film Transistors Using High-k SrTa2O6

Cited by 12 publications

References 35 publications

Inkjet‐Printed and Deep‐UV‐Annealed YAlOx Dielectrics for High‐Performance IGZO Thin‐Film Transistors on Flexible Substrates

Inkjet‐Printed and Deep‐UV‐Annealed YAlOx Dielectrics for High‐Performance IGZO Thin‐Film Transistors on Flexible Substrates

Dual Role of AgNO3 as an Oxidizer and Chloride Remover toward Enhanced Combustion Synthesis of Low-Voltage and Low-Temperature Amorphous Rare Metal-Free Oxide Thin-Film Transistors

Inkjet‐Printed Ternary Oxide Dielectric and Doped Interface Layer for Metal‐Oxide Thin‐Film Transistors with Low Voltage Operation

Contact Info

Product

Resources

About

Low-Operating-Voltage Solution-Processed InZnO Thin-Film Transistors Using High-k SrTa₂O₆

Inkjet‐Printed and Deep‐UV‐Annealed YAlO_x Dielectrics for High‐Performance IGZO Thin‐Film Transistors on Flexible Substrates

Inkjet‐Printed and Deep‐UV‐Annealed YAlO_x Dielectrics for High‐Performance IGZO Thin‐Film Transistors on Flexible Substrates

Dual Role of AgNO₃ as an Oxidizer and Chloride Remover toward Enhanced Combustion Synthesis of Low-Voltage and Low-Temperature Amorphous Rare Metal-Free Oxide Thin-Film Transistors