Low oxygen content trimethylaluminium and trimethylindium for MOVPE of light emitting devices

Smith, Lesley M.; Rushworth, S.; Ravetz, M.S.; Odedra, Rajesh; Kanjolia, Ravi; Agert, Carsten; Dimroth, Frank; Schubert, U.; Bett, Andreas W.

doi:10.1016/s0022-0248(00)00654-0

Cited by 9 publications

(5 citation statements)

References 8 publications

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“…It is therefore important to detect and control oxygen-containing impurities in group III organometallic and group V hydride gases (NH 3 , PH 3 , and AsH 3 ) when growing epitaxial films. [3][4][5][6] For current moisture-sensitive processes (e.g., epitaxy) and future lithography, i.e., extreme ultraviolet lithography, pointof-entry monitoring of gases is no longer good enough for the critical process steps, and, as a result, in-line monitoring of water vapor contamination at the point of use (e.g., close to the plasma etching or VPE chamber) is essential. Trace moisture analyzers for this application must be ultra sensitive with fast response times.…”

Section: Introductionmentioning

confidence: 99%

Pressure Broadening of H₂O Absorption Lines in the 1.3 μm Region Measured by Continuous Wave-Cavity Ring-Down Spectroscopy: Application in the Trace Detection of Water Vapor in N₂, SiH₄, CF₄, and PH₃

et al. 2008

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A continuous wave cavity ring-down (cw-CRD) spectrometer has been developed for the measurement of trace levels of water vapor by absorption spectroscopy at wavelengths in the vicinity of 1358 nm and 1392 nm. The speed of data acquisition and selectivity make cavity ringdown spectroscopy potentially more useful than current techniques for measurement of trace water in process gases and vacuum environments used for semiconductor manufacture where water vapor contamination has a detrimental effect on the final product. The pressure broadening coefficients (gamma) for bath gases N(2), air, and Ar and semiconductor process gases SiH(4), PH(3), and CF(4) were determined for a range of absorption lines in the 2nu(1) and nu(1) + nu(3) bands of H(2)O. For the transitions investigated, the concentration of water vapor in the sample gas varied from 1.7 x 10(12) to 2.9 x 10(15) molecule cm(-3) in N(2) at a total pressure of <10 mbar and was mixed with the bath gas of increasing pressure up to approximately 200 mbar. The values of gamma quantify the reduction in peak absorption cross-sections with bath gas pressure and, thus, their effects on the detection limit of water vapor. For a CRD spectrometer with a ring-down time of tau = 12.0 mus measured with a precision of 0.6%, detection limits for the measurement of water vapor in 1 atm N(2) and of CF(4) were estimated to be 18 and 14 ppbv, respectively. Competing absorption by SiH(4) and PH(3) in the 1.3 mum wavelength region results in respective detection limits for water vapor of 98 and 319 ppbv (relative to 1 atm) in 0.2 atm SiH(4) and 0.37 atm PH(3).

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Section: Introductionmentioning

confidence: 99%

Pressure Broadening of H₂O Absorption Lines in the 1.3 μm Region Measured by Continuous Wave-Cavity Ring-Down Spectroscopy: Application in the Trace Detection of Water Vapor in N₂, SiH₄, CF₄, and PH₃

et al. 2008

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“…In particular, the oxygen content of the precursors has been identified as critical to the performance of the final device. [1][2][3][4][5][6][7] Oxygen forms a deep recombination level in III-V semiconductors and can increase the threshold current and reduce photoluminescence efficiency, minority-carrier lifetimes, and device reliability even at levels below 10 17 cm À3 . [1][2][3][4] The incorporation of oxygen in the growing film is more pronounced when the film contains highly reactive constituents such as aluminum.…”

Section: Introductionmentioning

confidence: 99%

“…7 A number of studies have shown that methoxide impurities in trimethylaluminum and trimethylindium precursors can significantly influence the quality of epitaxial layers. [2][3][4][5] In addition, it is also necessary to minimize water vapor contamination that may be introduced into the MOCVD tool from the phosphine process gas. 1,6 Water vapor is one of the most difficult impurities to eliminate because of its ubiquity and chemical properties.…”

Section: Introductionmentioning

confidence: 99%

Detection of Trace Water Vapor in High-Purity Phosphine Using Cavity Ring-Down Spectroscopy

et al. 2007

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The presence of trace water vapor in process gases such as phosphine, used for compound semiconductor epitaxial growth, can negatively affect the optical and electrical properties of the final device. Therefore, sensitive H2O measurement techniques are required to monitor precursor purity and detect unacceptable contamination levels. A commercial cavity ring-down spectrometer that monitors an H2O absorption line at a wavelength of 1392.53 nm was investigated for service in high purity PH3. Spectral parameters such as the line shape of water vapor in the presence of PH3 as well as background features due to PH3 were measured at different pressures and incorporated into the data analysis software for accurate moisture readings. Test concentrations generated with a diffusion vialbased H2O source and dilution manifold were used to verify instrument accuracy, sensitivity, linearity, and response time. H2O readings at 13.2 kPa corresponded well to added concentrations (slope=0.990+/-0.01) and were linear in the tested range (0-52.7 nmol mol-1). The analyzer was sensitive to changes in H2O concentration of 1.3 nmol mol-1 based on 3sigma of the calibration curve intercept for a weighted linear fit. Local PH3 absorption features that could not be distinguished from the H2O line were present in the purified PH3 spectra and resulted in an additional systematic uncertainty of 9.0 nmol mol-1. Equilibration to changing H2O levels at a flow rate of 80 std cm3 min-1 PH3 occurred in 10-30 minutes. The results indicate that cavity ring-down spectroscopy (CRDS) at 1392.53 nm may be useful for applications such as on-line monitoring (and dry-down) of phosphine gas delivery lines or the quality control of cylinder sources.

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“…1-3,6-8 Thus precursors with extremely low oxygen concentration, especially the trimethyl aluminum (TMAl) and indium sources, were developed for the deposition of (In)AlGaAs by metalorganic vapor phase epitaxy (MOVPE). 1,6,9 Alternatively, to the Al-containing QWs Al-free active regions like tensile strained GaAsP [10][11][12] or compressively strained InGaAsP, 13 QWs have been introduced for high-power laser applications enabling reliable operation of devices with the shorter wavelength of 730 nm at 2 W 14 and 0.5 W 13 cw (100 mm stripe width), respectively. The results suggest a lower sensitivity of the laser to residual oxygen based impurities 6 in the precursors and in the MOVPE system itself.…”

Section: Introductionmentioning

confidence: 99%

Influence of oxygen in AlGaAs-based laser structures with Al-Free active region on device properties

Knauer

Wenzel

Erbert

et al. 2001

Journal of Elec Materi

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AlGaAs-based lasers with GaAsP active regions for emission wavelengths near 730 nm and 800 nm were studied. Trimethyl aluminum sources with different levels of oxygen concentration were used for the deposition of the laser structures. The laser data show that the oxygen level in the AlGaAs wave guides is very critical for the performance of the 730 nm devices, even for the use of an Alfree active region, while its influence is weak for the 800 nm devices. Using the TMAl source leading to the lowest O-uptake in the AlGaAs wave guides from such structures, 7 W output power and a degradation rate of 1 ◊ 10 -5 h -1 at 2 W cw (100 mm stripe width ¥ 4 mm, 25∞C, 2000 h) are achieved for 730 nm emission.

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Low oxygen content trimethylaluminium and trimethylindium for MOVPE of light emitting devices

Cited by 9 publications

References 8 publications

Pressure Broadening of H₂O Absorption Lines in the 1.3 μm Region Measured by Continuous Wave-Cavity Ring-Down Spectroscopy: Application in the Trace Detection of Water Vapor in N₂, SiH₄, CF₄, and PH₃

Pressure Broadening of H₂O Absorption Lines in the 1.3 μm Region Measured by Continuous Wave-Cavity Ring-Down Spectroscopy: Application in the Trace Detection of Water Vapor in N₂, SiH₄, CF₄, and PH₃

Detection of Trace Water Vapor in High-Purity Phosphine Using Cavity Ring-Down Spectroscopy

Influence of oxygen in AlGaAs-based laser structures with Al-Free active region on device properties

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Low oxygen content trimethylaluminium and trimethylindium for MOVPE of light emitting devices

Cited by 9 publications

References 8 publications

Pressure Broadening of H2O Absorption Lines in the 1.3 μm Region Measured by Continuous Wave-Cavity Ring-Down Spectroscopy: Application in the Trace Detection of Water Vapor in N2, SiH4, CF4, and PH3

Pressure Broadening of H2O Absorption Lines in the 1.3 μm Region Measured by Continuous Wave-Cavity Ring-Down Spectroscopy: Application in the Trace Detection of Water Vapor in N2, SiH4, CF4, and PH3

Detection of Trace Water Vapor in High-Purity Phosphine Using Cavity Ring-Down Spectroscopy

Influence of oxygen in AlGaAs-based laser structures with Al-Free active region on device properties

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Pressure Broadening of H₂O Absorption Lines in the 1.3 μm Region Measured by Continuous Wave-Cavity Ring-Down Spectroscopy: Application in the Trace Detection of Water Vapor in N₂, SiH₄, CF₄, and PH₃

Pressure Broadening of H₂O Absorption Lines in the 1.3 μm Region Measured by Continuous Wave-Cavity Ring-Down Spectroscopy: Application in the Trace Detection of Water Vapor in N₂, SiH₄, CF₄, and PH₃