Low phase noise 58 GHz SiGe HBT push-push oscillator with simultaneous 29 GHz output

Sinnesbichler, F.X.; Hautz, B.; Olbrich, G.R.

doi:10.1109/mwsym.2000.860879

Cited by 9 publications

(3 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The required ground is provided by a -stub. According to the topology described above, several oscillator circuits have been fabricated and characterized [38]. Measured oscillation frequencies are between 58.04-58.4 GHz, which agrees very well with the simulated frequency of 58.2 GHz.…”

Section: Microstrip Resonator Oscillatorssupporting

confidence: 71%

Hybrid millimeter-wave push-push oscillators using silicon-germanium HBTs

Sinnesbichler

2003

IEEE Trans. Microwave Theory Techn.

Self Cite

View full text Add to dashboard Cite

Push-push design has proven to be an efficient way to extend the usable frequency range of active devices for oscillator applications. In this paper, the basic principles of push-push oscillator design are explained and various possibilities to realize this concept are shown. Several examples of hybrid millimeter-wave push-push oscillators using SiGe HBTs as active devices are discussed. Details on large-signal modeling of the SiGe HBTs using both a vertical bipolar integrated-circuit model, as well as a customized large-signal model are given. Measured key performance data of microstrip resonator oscillators at 57 and 58 GHz are output power levels of +1 dBm and single-sideband phase-noise figures (1-MHz offset from carrier) of 106 and 108 dBm/Hz, respectively. For the dielectric-resonator oscillators, a maximum output power of 8 dBm and an optimum phase noise of 112 dBc/Hz (14-dBm output power), as well as a mechanical tuning range of 500 MHz were measured.

show abstract

Section: Microstrip Resonator Oscillatorssupporting

confidence: 71%

Hybrid millimeter-wave push-push oscillators using silicon-germanium HBTs

Sinnesbichler

2003

IEEE Trans. Microwave Theory Techn.

Self Cite

View full text Add to dashboard Cite

show abstract

“…The pushpush oscillator circuit configuration [1]- [5] is one of the many techniques adopted for generating higher frequency signals.…”

Section: Introductionmentioning

confidence: 99%

“…All of the push-push FET Oscillator circuits described in the literature [2]- [5] have used the circuit model as shown in Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

New analysis on push-push FET oscillators for output power improvement

Kwon

Kim

Proceedings of the 2004 IEEE International Frequency Control Symposium and Exposition, 2004.

View full text Add to dashboard Cite

In this paper, push-push FET DRO circuits are theoretically analyzed and their design criterion is proposed for output power improvement. The analysis is carried out with a conceptual circuit block diagram of the circuits and the method used in [11], and includes the effect on the second harmonic frequency components. The paper presents a theoretical condition that a second DR( Dielectric Resonator ) placed at the drain port in the push-push FET DRO can provide a positive feedback.

show abstract

Oscillator Design

2021

Microwave Circuit Design

View full text Add to dashboard Cite

Low phase noise 58 GHz SiGe HBT push-push oscillator with simultaneous 29 GHz output

Cited by 9 publications

References 7 publications

Hybrid millimeter-wave push-push oscillators using silicon-germanium HBTs

Hybrid millimeter-wave push-push oscillators using silicon-germanium HBTs

New analysis on push-push FET oscillators for output power improvement

Oscillator Design

Contact Info

Product

Resources

About