Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

Lee, H.Y.; Chen, Y.S.; Chen, P.S.; Wu, Tung Ying; Chen, F.; Wang, C.C.; Tzeng, Pei-Jer; Tsai, Ming-Jinn; Lien, Chenhsin

doi:10.1109/led.2009.2034670

Cited by 183 publications

(69 citation statements)

References 10 publications

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“…[6][7][8][9]11,30 In our previous work, the diffusion of oxygen atoms from HfO 2 dielectrics to Ti buffer layer during PMA process have been analyzed using micro-Auger electron spectroscopy. 33 Figure 1c free devices can also be achieved by decreasing the thickness of HfO x layer, however, which will limit the memory device in low power operation. 39 Additionally, other researchers have also examined the relationship between V F and I L by changing the thicknesses of Ti or HfO x or both layers in Ti/HfO x -based RRAM.…”

Section: Memory Devices Fabricationmentioning

confidence: 99%

The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories

et al. 2017

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Ti/HfO-based resistive random access memory (RRAM) has been extensively investigated as an emerging nonvolatile memory (NVM) candidate due to its excellent memory performance and CMOS process compatibility. Although the importance of the role of the Ti buffer layer is well recognized, detailed understanding about the nature of Ti thickness-dependent asymmetric switching is still missing. To realize this, the present work addresses the effects of Ti buffer layer thickness on the switching properties of TiN/Ti/HfO/TiN 1T1R RRAM. Consequently, we have demonstrated a simple strategy to regulate the FORMING voltage, leakage current, memory window, and decrease the operation current, etc. by varying the thickness of the Ti layer on the HfO dielectrics. Accordingly, controllable and reliable bipolar, complementary, and reverse bipolar resistive switching (BRS, CRS, and R-BRS) properties have been demonstrated. This work also provides the direction to avoid unwanted CRS properties during the first RESET operation by decreasing the FORMING voltage. Furthermore, the memory device shows good nonvolatility at ∼1 μA programming current by selecting a proper thickness of Ti buffer layer. To achieve reliable BRS properties for low power application, the operation current has been further optimized, whereas the memory device shows pulse endurance of more than 7 million cycles at a low pulse width of 50 ns and excellent data retention properties of more than 40 h at 150 °C measurement temperature.

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Section: Memory Devices Fabricationmentioning

confidence: 99%

The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories

et al. 2017

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“…While CF evolution is typically associated with thermal, electrical or ion migration [19,20], there is no consensus on the dominant conduction mechanism in resistive switching memory devices [21][22][23]. Among the commonly observed conduction mechanisms are: (i) Poole-Frenkel emission [24][25][26][27][28][29][30][31][32]; (ii) Schottky emission [33][34][35][36][37][38][39][40][41][42]; (iii) SCLC [43][44][45][46][47][48][49][50][51][52][53] (iv) trap-assisted tunneling [54][55][56][57][58][59]; and (v) hopping conduction [60][61][62][63][64][65]. To enhance the device performance and data retention property, it is crucial to identifying t...…”

Section: Introductionmentioning

confidence: 99%

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

2015

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Abstract:Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical reduction-oxidation (redox) process and oxygen vacancies migration plays an essential role in the CF forming and rupture process. However, the conduction mechanism of resistive switching memory varies considerably depending on the material used in the dielectric layer and selection of electrodes. Among the popular observations are the Poole-Frenkel emission, Schottky emission, space-charge-limited conduction (SCLC), trap-assisted tunneling (TAT) and hopping conduction. In this article, we will conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism.

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“…1 Correlated electrons in resistance random access memories (RRAM) based on transition metal oxides (TMO) exhibit contrasting electrical properties, from insulator to conductor, and vice versa. 2,3 Recently, this phenomenon of insulative switching has gained renewed interest for nonvolatile data storage and reconfigurable electronics, considering the demand for exponential increase in data storage capacity. [4][5][6] Electrically programmable RRAM has multiple advantages as compared to current FLASH memory technology which include fast writing/erasing times (<100 ns), long retention lifetime (>10 yr), low power consumption, simplified structure, ease of design, scalability and Si-based complementary metal oxide semiconductor (CMOS) process technology compatibility.…”

Section: Introductionmentioning

confidence: 99%

“…Second, in valence change mechanism, specific TMO materials are chosen as the insulating layer (such as TiO 2 , NiO, HfO 2 ). 2,3,[12][13][14][15] The creation and migration of the oxygen vacancies leads to a redox reaction expressed by the valance state change of the cations. Upon SET, dislodged oxygen species from the TMO migrate to the electrode material (typically made of Ni, Ti, Ta, etc.…”

Section: Introductionmentioning

confidence: 99%

Intrinsic nanofilamentation in resistive switching

Cha

Bosman

et al. 2013

Journal of Applied Physics

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Resistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission electron microscopy is used to study in real-time the physical structure and analyze the chemical composition of the nanofilament dynamically during resistive switching. Electrical stressing using an external voltage was applied by a tungsten tip to the nanosized devices having hafnium oxide (HfO2) as the insulator layer. The formation and rupture of the nanofilaments result in up to three orders of magnitude change in the current flowing through the dielectric during the switching event. Oxygen vacancies and metal atoms from the anode constitute the chemistry of the nanofilament.

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Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

Cited by 183 publications

References 10 publications

The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories

The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Intrinsic nanofilamentation in resistive switching

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