Low-Power High-Q NEMS Receiver Architecture

Kiaei, S.; Taleie, Shahin Mehdizad; Bakkaloglu, Bertan

doi:10.1109/iscas.2005.1465607

Cited by 3 publications

(3 citation statements)

References 8 publications

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“…The demonstrated multi-frequency operation, low insertion loss, and high out-of-band rejection make these MEMS filters very suitable for channel selection at the RF or IF stages of wireless communication systems, which can potentially address the well-known difficulty in tuning high-Q systems by using switchable filter banks as described in [1,3,12].…”

Section: Applicationsmentioning

confidence: 99%

Single-ended-to-differential and differential-to-differential channel-select filters based on piezoelectric AlN contour-mode MEMS resonators

Zuo

Piazza

2010

2010 IEEE International Frequency Control Symposium

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This paper reports on the first demonstration of single-ended-to-differential and differential-to-differential (S2D and D2D) channel-select filters based on single-layer (SL) and dual-layer-stacked (DLS) AlN contourmode MEMS resonators. The key filter performances in terms of insertion loss (as low as 1.4 dB), operating frequency (250-1280 MHz), and out-of-band rejection (up to 60 dB) constitute a significant advancement over all other state-of-the-art RF MEMS technologies. The fabrication process, namely stacking of two piezoelectric AlN layers (600 nm each) and three Pt electrode layers (100 nm each), is fully compatible with the previously demonstrated AlN RF MEMS switch process (also post-CMOS compatible), which makes it possible to implement multi-frequency switchable filter banks on a single chip. The S2D configuration is also able to combine the balun, filter, and impedance transformer functions in a single MEMS structure and only takes on a very small form factor (60×200 μm). These unique features will potentially revolutionize the field of RF and microwave IC design by enabling MEMS-IC co-design and the development of unconventional and low-power RF architectures. , which makes it possible to implement multi-frequency switchable filter banks on a single chip. The S2D configuration is also able to combine the balun, filter, and impedance transformer functions in a single MEMS structure and only takes on a very small form factor (60×200 µm). These unique features will potentially revolutionize the field of RF and microwave IC design by enabling MEMS-IC co-design and the development of unconventional and low-power RF architectures. Disciplines Electrical and Electronics

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Section: Applicationsmentioning

confidence: 99%

Single-ended-to-differential and differential-to-differential channel-select filters based on piezoelectric AlN contour-mode MEMS resonators

Zuo

Piazza

2010

2010 IEEE International Frequency Control Symposium

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“…Novel rf architectures that take advantage of high Q microelectromechanical resonant devices have already been proposed by circuit designers 31,32 and rf MEMS experts. 33 The ability to array multiple filtering components on the same chip is particularly attractive for the deployment of next generation software defined cognitive radios, which will require spectrum-aware components capable of rapid reconfiguration and high rejection of interferers.…”

Section: Mems Integrated Rf Front Endsmentioning

confidence: 99%

Integrated aluminum nitride piezoelectric microelectromechanical system for radio front ends

Piazza¹

2009

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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This article summarizes the most recent technological developments in the realization of integrated aluminum nitride (AlN) piezoelectric microelectromechanical system (MEMS) for radio frequency (rf) front ends to be employed in next generation wireless communication devices. The AlN-based resonator and switch technologies are presented, their principle of operation explained, and some key experimental achievements showing device operations between 20MHz and 10GHz are introduced. Fundamental material, device, and fabrication aspects that needed to be taken into account for the demonstration of the first integrated rf MEMS solution based on the combination of AlN MEMS resonators and switches are highlighted. Given the ability to operate over a broad range of frequencies on a single silicon chip, the AlN MEMS technology is extremely attractive for the demonstration of reconfigurable and multiband rf transceivers. Next generation rf architectures that take advantage of large scale integration of AlN MEMS resonators and switches are briefly presented.

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“…A promising solution for single-chip multiple frequency reconfigurable wireless communications is the use of narrow-band filter banks that span the entire frequency range of interest and realize direct channel selection at the radio frequency (RF) stage [1][2][3]. Emerging resonator technologies based on microelectromechanical systems (MEMS) can provide high quality factor, single-chip multi-frequency operation, and CMOS compatibility [1,4].…”

Section: Introductionmentioning

confidence: 99%

Novel electrode configurations in dual-layer stacked and switchable ALN contour-mode resonators for low impedance filter termination and reduced insertion loss

Zuo

Sinha

Piazza

2010

2010 IEEE 23rd International Conference on Micro Electro Mechanical Systems (MEMS)

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This paper reports, for the first time, on the design and demonstration of two novel electrode configurations in dual-layer stacked Aluminum Nitride (AlN) piezoelectric contour-mode resonators to obtain low filter termination resistance (down to 300 Ω, which also results in better filter out-of-band rejection) and reduced insertion loss (IL as low as 1.6 dB) in multi-frequency (100 MHz -1 GHz) AlN MEMS filters. The microfabrication process is fully compatible with the previously demonstrated AlN RF MEMS switches, which makes it possible to design and integrate multi-frequency switchable filter banks on a single chip. ©2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. Disciplines Electrical and Electronics CommentsThis conference paper is available at ScholarlyCommons: http://repository.upenn.edu/ese_papers/543 NOVEL ELECTRODE CONFIGURATIONS IN DUAL-LAYER STACKED AND SWITCHABLE ALN CONTOUR-MODE RESONATORS FOR LOW IMPEDANCE FILTER TERMINATION AND REDUCED INSERTION LOSSChengjie Zuo, Nipun Sinha, and Gianluca Piazza Penn Micro and Nano Systems (PMaNS) Laboratory, University of Pennsylvania Philadelphia, PA, 19104, USA ABSTRACTThis paper reports, for the first time, on the design and demonstration of two novel electrode configurations in dual-layer stacked Aluminum Nitride (AlN) piezoelectric contour-mode resonators to obtain low filter termination resistance (down to 300 , which also results in better filter out-of-band rejection) and reduced insertion loss (IL as low as 1.6 dB) in multi-frequency (100 MHz -1 GHz) AlN MEMS filters. The microfabrication process is fully compatible with the previously demonstrated AlN RF MEMS switches, which makes it possible to design and integrate multi-frequency switchable filter banks on a single chip.

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Low-Power High-Q NEMS Receiver Architecture

Cited by 3 publications

References 8 publications

Single-ended-to-differential and differential-to-differential channel-select filters based on piezoelectric AlN contour-mode MEMS resonators

Single-ended-to-differential and differential-to-differential channel-select filters based on piezoelectric AlN contour-mode MEMS resonators

Integrated aluminum nitride piezoelectric microelectromechanical system for radio front ends

Novel electrode configurations in dual-layer stacked and switchable ALN contour-mode resonators for low impedance filter termination and reduced insertion loss

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