Low power, high speed VLSI circuits in 16nm technology

Alluri, Sudhakar; Balaji, B.; Cury, Ch.

doi:10.1063/5.0060101

Cited by 7 publications

(1 citation statement)

References 29 publications

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“…For the existing HEMT to improve the characteristics of the device GaN layers, front Pi gate, and back Pi gate are incorporated [8]. These cap layers passivation layers provide sealing the first layer of HEMT structure from external atmospheric fluctuations [9]. The proposed high K dielectric FG and BG HEMT overcomes the limitation of dual gate HEMT and exhibits optimized HEMT Structure which gives optimistic DC and RF characteristics [10].…”

Section: Introductionmentioning

confidence: 99%

Design and performance analysis of front and back Pi 6 nm gate with high K dielectric passivated high electron mobility transistor

Gowthami

Balaji

Rao

2023

IJECE

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Advanced high electron mobility transistor (HEMT) with dual front gate, back gate with silicon nitride/aluminum oxide (Si3N4/Al2O3) as passivation layer, has been designed. The dependency on DC characteristics and radio frequency characteristics due to GaN cap layers, multi gate (FG and BG), and high K dielectric material is established. Further compared single gate (SG) passivated HEMT, double gate (DG) passivated HEMT, double gate triple (DGT) tooth passivated HEMT, high K dielectric front Pi gate (FG) and back Pi gate (BG) HEMT. It is observed that there is an increased drain current (Ion) of 5.92 (A/mm), low leakage current (Ioff) 5.54E-13 (A) of transconductance (Gm) of 3.71 (S/mm), drain conductance (Gd) of 1.769 (S/mm), Cutoff frequency (fT) of 743 GHz maximum oscillation frequency (Fmax) 765 GHz, minimum threshold voltage (V<sub>th</sub>) of -4.5 V, on resistance (Ron) of 0.40 (Ohms) at V<sub>gs</sub>=0 V. These outstanding characteristics and transistor structure of proposed HEMT and materials involved to apply for upcoming generation high-speed GHz frequency applications.

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Section: Introductionmentioning

confidence: 99%