2016 IEEE 59th International Midwest Symposium on Circuits and Systems (MWSCAS) 2016
DOI: 10.1109/mwscas.2016.7870004
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Low power multi threshold 7T SRAM cell

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Cited by 11 publications
(2 citation statements)
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“…The work proposed in [1], [4] is about discussing the design & implementation of 16X16 SRAM Array to store 256 bits. The proposed array [1] is built using Conventional 6T SRAM Cell.The work carried in [2] demonstrates the design of 16x16 SRAM based Array on Conventional 7T SRAM Cells.…”
Section: Related Workmentioning
confidence: 99%
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“…The work proposed in [1], [4] is about discussing the design & implementation of 16X16 SRAM Array to store 256 bits. The proposed array [1] is built using Conventional 6T SRAM Cell.The work carried in [2] demonstrates the design of 16x16 SRAM based Array on Conventional 7T SRAM Cells.…”
Section: Related Workmentioning
confidence: 99%
“…In the present context of the work the comparative power analysis of 16x16 SRAM Array is carried with basic 7T, 7T-SVL, and 7T-ISVL. Single row of the proposed designed memory array has 16 cells further these 16 rows of 16 cells are used to form 16X16 SRAM Array [4].Individual SRAM cell in each row of 16X16 SRAM Array is arranged in the form of horizontal rows and vertical columns, accessed via row and Column decoder. In general SRAM Array has 2 N rows called as word lines and 2 M columns referred as bit lines [2].Generally Memory Array is built up with Basic cell, Row-column decoder, Pre-charge circuit and Sense amplifier.…”
Section: Related Workmentioning
confidence: 99%