Low pressure metalorganic chemical vapor deposition of AIN over sapphire substrates

Khan, M. Asif; Kuznia, J. N.; Skogman, R. A.; Olson, D. T.; Millán, M.; Choyke, W. J.

doi:10.1063/1.108144

Cited by 110 publications

(32 citation statements)

References 8 publications

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“…High growth temperature and low pressure is thus required for the growth of AlN to provide enough mobility to aluminum adatoms. Various methods are used to improve the material quality of AlN, for example, pulsed growth of AlN 11, 12, use of alternating V/III ratio 13, nitridation of the substrate 14, and epitaxial lateral overgrowth 15. The growth of thick and low dislocation density AlN epilayer is still difficult.…”

Section: Introductionmentioning

confidence: 99%

Three‐step growth method for high quality AlN epilayers

Nakarmi

Cai

Lin

et al. 2011

Physica Status Solidi (a)

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We report a three-step growth method to grow thick and high quality aluminum nitride (AlN) epilayers on sapphire substrates by metal organic chemical vapor deposition (MOCVD). The three-step growth method begins with a deposition of a thin AlN buffer layer at 950 8C followed by an intermediate AlN (I-AlN) layer at 1100 8C, and finally a thick AlN epilayer at high temperature around 1325 8C. AlN epilayers grown by this method have smooth surfaces, narrow width of X-ray rocking curves, and strong band edge photoluminescence (PL) emissions with low impurity emissions. Transmission electron microscopy revealed that most of the threading dislocations are annihilated within 300 nm. Stacking faults are greatly reduced in epilayers grown by this method resulting in very low screw type threading dislocation density. Dominant threading dislocations in the AlN epilayers are edge type originated from misfit dislocations (MD).

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Section: Introductionmentioning

confidence: 99%

Three‐step growth method for high quality AlN epilayers

Nakarmi

Cai

Lin

et al. 2011

Physica Status Solidi (a)

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“…Therefore, extensive studies dealing with plasma emission features due to laser pulse durations in the range of both fs and ns have been considered to be extremely valuable. With this aim, during the 1990s several experimental works [29][30][31][32] were performed showing, for specific applications or conditions, that fs laser beams could induce promising process properties which might allow analytical improvements of ns-LIBS. As already mentioned, ns pulses can interact with the expanding plasma so that the excited species temperatures, electronic densities and so on, are sustained longer than those due to ultra-short laser pulses.…”

Section: Fs/ns Dp-libsmentioning

confidence: 99%

Magnetic Field Effects on Anisotropic Parabolic Quantum Dots

Natori

Sugimoto

Fujito

1997

Jpn. J. Appl. Phys.

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In this paper, we report a survey of two of the large number of possible practical applications of the laser ablation performed by an ultra-short pulse laser, namely pulsed laser deposition (PLD) and fs/ns dual-pulse laser-induced breakdown spectroscopy (DP-LIBS). These applications differ from those using just longer pulsed lasers as a consequence of the distinctive characteristics of the plasma produced by ultra-short laser beams. The most important feature of this plasma is the large presence of particles with nanometric size which plays a fundamental role in both applications.

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“…19 We speculate that the pre-reaction between TRIPEr and NH 3 in the gas phase could be a cause of the degraded crystalline quality upon Er doping, similar to the prereaction between NH 3 and trimethylaluminum during AlN epilayer growth. [23][24][25] When NH 3 and TRIPEr are mixed in the injection area of the MOCVD reactor, they will react to form an adduct according to the following chemical reaction:…”

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confidence: 99%

Refractive index of erbium doped GaN thin films

Alajlouni

Sun

et al. 2014

Applied Physics Letters

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GaN is an excellent host for erbium (Er) to provide optical emission in the technologically important as well as eye-safe 1540 nm wavelength window. Er doped GaN (GaN:Er) epilayers were synthesized on c-plane sapphire substrates using metal organic chemical vapor deposition. By employing a pulsed growth scheme, the crystalline quality of GaN:Er epilayers was significantly improved over those obtained by conventional growth method of continuous flow of reaction precursors. X-ray diffraction rocking curve linewidths of less than 300 arc sec were achieved for the GaN (0002) diffraction peak, which is comparable to the typical results of undoped high quality GaN epilayers and represents a major improvement over previously reported results for GaN:Er. Spectroscopic ellipsometry was used to determine the refractive index of the GaN:Er epilayers in the 1540 nm wavelength window and a linear dependence on Er concentration was found. The observed refractive index increase with Er incorporation and the improved crystalline quality of the GaN:Er epilayers indicate that low loss GaN:Er optical waveguiding structures are feasible.

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Low pressure metalorganic chemical vapor deposition of AIN over sapphire substrates

Cited by 110 publications

References 8 publications

Three‐step growth method for high quality AlN epilayers

Three‐step growth method for high quality AlN epilayers

Magnetic Field Effects on Anisotropic Parabolic Quantum Dots

Refractive index of erbium doped GaN thin films

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